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Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 12V, TC = 25°C

Continuous Drain Current

22*

ID @ VGS = 12V, TC = 100°C Continuous Drain Current

IDM

Pulsed Drain Current

PD @ TC = 25°C

Max. Power Dissipation

Linear Derating Factor

0.6

W/°C

VGS

Gate-to-Source Voltage

±20

EAS

Single Pulse Avalanche Energy

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

7.5

dv/dt

Peak Diode Recovery dv/dt

1.4

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Pckg. Mounting Surface Temp.

300 ( for 5s )

Weight

1.0 ( Typical )

Pre-Irradiation

International Rectifier's R5

technology provides

high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm

)). The combination

of low R

DS(on)

and low gate charge reduces the power

losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.

RADIATION HARDENED JANSR2N7481U3
POWER MOSFET
SURFACE MOUNT (SMD-0.5)

REF: MIL-PRF-19500/703

10/24/03

www.irf.com

100V, N-CHANNEL

* Current is limited by package

TECHNOLOGY

Features:

Single Event Effect (SEE) Hardened

Ultra Low R

DS(on)

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

For footnotes refer to the last page

SMD-0.5

IRHNJ57130

Product Summary

Part Number Radiation Level R

DS(on)

QPL Part Number

IRHNJ57130 100K Rads (Si)

0.06

22A*

JANSR2N7481U3

IRHNJ53130 300K Rads (Si)

0.06

22A*

JANSF2N7481U3

IRHNJ54130 600K Rads (Si)

0.06

22A*

JANSG2N7481U3

IRHNJ58130 1000K Rads (Si) 0.075

22A*

JANSH2N7481U3

PD - 93754E

IRHNJ57130, JANSR2N7481U3

Pre-Irradiation

www.irf.com

Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

100

VGS = 0V, ID = 1.0mA

BVDSS/

TJ Temperature Coefficient of Breakdown

0.11

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

0.06

VGS = 12V, ID = 16A

Resistance

VGS(th)

Gate Threshold Voltage

2.0

4.0

VDS = VGS, ID = 1.0mA

gfs

Forward Transconductance

S (

)

VDS > 15V, IDS = 16A

IDSS

Zero Gate Voltage Drain Current

VDS= 80V ,VGS=0V

VDS = 80V,

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

-100

VGS = -20V

Total Gate Charge

VGS =12V, ID = 22A

Qgs

Gate-to-Source Charge

7.4

VDS = 50V

Qgd

Gate-to-Drain (`Miller') Charge

(on)

Turn-On Delay Time

VDD = 50V, ID = 22A,

Rise Time

100

VGS =12V, RG = 7.5

(off)

Turn-Off Delay Time

Fall Time

LS + LD

Total Inductance

4.0

Ciss

Input Capacitance

1005

VGS = 0V, VDS = 25V

Coss

Output Capacitance

365

f = 1.0MHz

Crss

Reverse Transfer Capacitance

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

1.67

RthJ-PCB

Junction-to-PC board

6.9

soldered to a 2" square copper-clad board

°C/W

Measured from the center of

drain pad to center of source pad

Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page

* Current is limited by package

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

22*

ISM

Pulse Source Current (Body Diode)

VSD

Diode Forward Voltage

1.2

= 25°C, IS = 22A, VGS = 0V

trr

Reverse Recovery Time

250

Tj = 25°C, IF = 22A, di/dt

100A/

QRR Reverse Recovery Charge

850

VDD

25V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

www.irf.com

Pre-Irradiation

IRHNJ57130, JANSR2N7481U3

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

Parameter

Up to 600K Rads(Si)

1000K Rads (Si)

Units

Test Conditions

Min Max Min Max
BV

DSS

Drain-to-Source Breakdown Voltage 100 -- 100 -- V V

= 0V, I

= 1.0mA

GS(th)

Gate Threshold Voltage

2.0 4.0 1.5 4.0

= V

, I

= 1.0mA

GSS

Gate-to-Source Leakage Forward

-- 100 -- 100 nA

= 20V

GSS

Gate-to-Source Leakage Reverse

-- -100 -- -100

= -20 V

DSS

Zero Gate Voltage Drain Current

-- 10 -- 25 µA V

= 80V, V

=0V

DS(on)

Static Drain-to-Source

-- 0.064 -- 0.08

= 12V, I

=16A

On-State Resistance (TO-3)

DS(on)

Static Drain-to-Source

-- 0.06 -- 0.075

= 12V, I

=16A

On-State Resistance (SMD-.5)

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.

Radiation Characteristics

1. Part numbers IRHNJ57130 ( JANSR2N7481U3 ), IRHNJ53130 ( JANSF2N7481U3 ) and IRHNJ54130 ( JANSG2N7481U3 )
2. Part number IRHNJ58130 ( JANSH2N7481U3 )

Fig a. Single Event Effect, Safe Operating Area

Diode Forward Voltage

-- 1.2 -- 1.2 V V

= 0V, IS = 22A

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Single Event Effect Safe Operating Area

For footnotes refer to the last page

Ion

LET

Energy Range

(V)

MeV/(mg/cm

)) (MeV) (µm) @V

=0V @V

=-5V @V

=-10V @V

=-15V @V

=-20V

36.7

309 39.5 100 100 100 100 100

59.4

341 32.5 100 100 100 35 25

82.3

350 28.4 100 100 80

25 --

100

120

-20

-15

-10

-5

VGS

VDS

IRHNJ57130, JANSR2N7481U3

Pre-Irradiation

www.irf.com

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

100

0.1

100

20µs PULSE WIDTH
T = 25 C

TOP

BOTTOM

VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

5.0V

100

0.1

100

20µs PULSE WIDTH
T = 150 C

TOP

BOTTOM

VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

5.0V

100

5.0

6.0

7.0

8.0

9.0

10.0

V = 50V
20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

T = 150 C

T = 25 C

-60 -40 -20

80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

I =

12V

22A

www.irf.com

Pre-Irradiation

IRHNJ57130, JANSR2N7481U3

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

100

400

800

1200

1600

2000

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

V
C
C
C

=
=
=
=

0V,
C
C
C

f = 1MHz

+ C

C SHORTED

GS
iss

gd ,

rss

oss

iss

oss

rss

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

SEE FIGURE

I =

22A

= 20V

= 50V

= 80V

0.1

100

0.4

0.6

0.8

1.0

1.2

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

T = 25 C

T = 150 C

100

1000

VDS , Drain-toSource Voltage (V)

0.1

100

1000

I D

, Drain-to-Source Current (A)

Tc = 25°C

Tj = 150°C

Single Pulse

1ms

10ms

OPERATION IN THIS AREA

LIMITED BY R DS(on)

100µs

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