Absolute Maximum Ratings
Parameter
Units
ID @ VGS = 12V, TC = 25C
Continuous Drain Current
20
ID @ VGS = 12V, TC = 100C Continuous Drain Current
12.5
IDM
Pulsed Drain Current
80
PD @ TC = 25C
Max. Power Dissipation
75
W
Linear Derating Factor
0.6
W/C
VGS
Gate-to-Source Voltage
20
V
EAS
Single Pulse Avalanche Energy
65
mJ
IAR
Avalanche Current
20
A
EAR
Repetitive Avalanche Energy
7.5
mJ
dv/dt
Peak Diode Recovery dv/dt
7.7
V/ns
T J
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Pckg. Mounting Surface Temp.
300 (for 5s)
Weight
1.0(Typical)
g
Pre-Irradiation
International Rectifier's R5
TM
technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
o
C
A
RADIATION HARDENED
IRHNJ57133SE
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
10/03/01
www.irf.com
1
130V, N-CHANNEL
c
TECHNOLOGY
SMD-0.5
Product Summary
Part Number Radiation Level R
DS(on)
I
D
IRHNJ57133SE 100K Rads (Si) 0.08
20A
Features:
n
Single Event Effect (SEE) Hardened
n
Ultra Low R
DS(on)
n
Low Total Gate Charge
n
Proton Tolerant
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Surface Mount
n
Ceramic Package
n
Light Weight
For footnotes refer to the last page
4
4
#
PD - 94294B
IRHNJ57133SE
Pre-Irradiation
2
www.irf.com
Electrical Characteristics
@ Tj = 25C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
130
--
-- V VGS = 0V, ID = 1.0mA
BVDSS/
TJ Temperature Coefficient of Breakdown
--
0.16
--
V/C
Reference to 25C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
--
--
0.08
VGS = 12V, ID = 12.5A
Resistance
VGS(th)
Gate Threshold Voltage
2.5
--
4.5
V
VDS = VGS, ID = 1.0mA
gfs
Forward Transconductance
8.0
--
--
S (
)
VDS > 15V, IDS = 12.5A
IDSS
Zero Gate Voltage Drain Current
--
--
10 VDS= 104V ,VGS=0V
--
--
25 VDS = 104V,
VGS = 0V, TJ = 125C
IGSS
Gate-to-Source Leakage Forward
--
--
100 VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
--
--
-100
VGS = -20V
Qg
Total Gate Charge
--
--
40 VGS =12V, ID = 20A
Qgs
Gate-to-Source Charge
--
--
16 nC VDS = 65V
Qgd
Gate-to-Drain (`Miller') Charge
--
--
18
td
(on)
Turn-On Delay Time
--
--
20 VDD = 65V, ID = 20A,
tr
Rise Time
--
--
100 VGS =12V, RG = 7.5
td
(off)
Turn-Off Delay Time
--
--
35
tf
Fall Time
--
--
40
LS + LD
Total Inductance
--
4.0
--
Ciss
Input Capacitance
--
970
-- VGS = 0V, VDS = 25V
Coss
Output Capacitance
--
300
-- pF f = 1.0MHz
Crss
Reverse Transfer Capacitance
--
20
--
nA
nH
ns
A
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
--
--
1.67
RthJ-PCB
Junction-to-PC board
--
6.6
--
soldered to a 2" square copper-clad board
C/W
Measured from the center of
drain pad to center of source pad
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
--
--
20
ISM
Pulse Source Current (Body Diode)
--
--
80
VSD
Diode Forward Voltage
--
--
1.2
V
T
j
= 25C, IS = 20A, VGS = 0V
trr
Reverse Recovery Time
--
--
250
nS
Tj = 25C, IF = 20A, di/dt
100A/
s
QRR Reverse Recovery Charge
--
--
1.5
C
VDD
25V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
www.irf.com
3
IRHNJ57133SE
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
Fig a. Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Parameter
100K Rads (Si)
Units
Test Conditions
Min
Max
BV
DSS
Drain-to-Source Breakdown Voltage
130
--
V
V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0
4.5
V
GS
= V
DS
, I
D
= 1.0mA
I
GSS
Gate-to-Source Leakage Forward
--
100
nA
V
GS
= 20V
I
GSS
Gate-to-Source Leakage Reverse
--
-100
V
GS
= -20V
I
DSS
Zero Gate Voltage Drain Current
--
10
A
V
DS
=104V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-3)
--
0.08
V
GS
= 12V, I
D
= 12.5A
R
DS(on)
Static Drain-to-Source
V
SD
Diode Forward Voltage
--
1.2
V
V
GS
= 0V, I
D
= 20A
On-State Resistance (SMD-0.5)
-- 0.08
V
GS
= 12V, I
D
= 12.5A
Ion
LET
Energy Range
V
DS
(V)
MeV/(mg/cm
2
)) (MeV) (m) @V
GS
=0V @V
GS
=-5V @V
GS
=-10V @V
GS
=-15V @V
GS
=-20V
Br
36.7
309 39.5 130 130 130 130 130
I
59.8
341 32.5 130 130 130 100 50
Au
82.3
350 28.4 130 120 30
-- --
0
30
60
90
120
150
-20
-15
-10
-5
0
VGS
VDS
Br
I
Au
Table 2. Single Event Effect Safe Operating Area
IRHNJ57133SE
Pre-Irradiation
4
www.irf.com
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
15
0.01
0.1
1
10
100
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
0.01
0.1
1
10
100
0.1
1
10
100
20s PULSE WIDTH
T = 150 C
J
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
12V
20A
0.1
1
10
100
5
7
9
11
13
15
V = 50V
20s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 150 C
J
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5
IRHNJ57133SE
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Pre-Irradiation
1
10
100
0
500
1000
1500
2000
2500
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
Crss
Ciss
Coss
0
8
16
24
32
40
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
20A
V
= 26V
DS
V
= 65V
DS
V
= 104V
DS
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 150 C
J
1
10
100
1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
I D
, Drain-to-Source Current (A)
Tc = 25C
Tj = 150C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100s
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