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Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 12V, TC = 25°C

Continuous Drain Current

ID @ VGS = 12V, TC = 100°C Continuous Drain Current

8.2

IDM

Pulsed Drain Current

PD @ TC = 25°C

Max. Power Dissipation

Linear Derating Factor

0.6

W/°C

VGS

Gate-to-Source Voltage

±20

EAS

Single Pulse Avalanche Energy

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

7.5

dv/dt

Peak Diode Recovery dv/dt

4.4

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Pckg. Mounting Surface Temp.

300 ( for 5s )

Weight

1.0 ( Typical )

Pre-Irradiation

International Rectifier's R5

technology provides

high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm

)). The combination

of low Rdson and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.

RADIATION HARDENED

IRHNJ57230

POWER MOSFET
SURFACE MOUNT (SMD-0.5)

07/22/02

www.irf.com

200V, N-CHANNEL

TECHNOLOGY

Product Summary

Part Number Radiation Level R

DS(on)

IRHNJ57230 100K Rads (Si) 0.20

13A

IRHNJ53230 300K Rads (Si) 0.20

13A

IRHNJ54230 600K Rads (Si) 0.20

13A

IRHNJ58230 1000K Rads (Si) 0.25

13A

Features:

Single Event Effect (SEE) Hardened

Ultra low R

DS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

For footnotes refer to the last page

SMD-0.5

PD - 93753A

IRHNJ57230

Pre-Irradiation

www.irf.com

Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

200

VGS = 0V, ID = 1.0mA

BVDSS/

TJ Temperature Coefficient of Breakdown

0.26

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

0.2

VGS = 12V, ID = 8.2A

Resistance

VGS(th)

Gate Threshold Voltage

2.0

4.0

VDS = VGS, ID = 1.0mA

gfs

Forward Transconductance

S (

)

VDS > 15V, IDS = 8.2A

IDSS

Zero Gate Voltage Drain Current

VDS= 160V ,VGS=0V

VDS = 160V,

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

-100

VGS = -20V

Total Gate Charge

VGS =12V, ID = 13A

Qgs

Gate-to-Source Charge

7.4

VDS = 100V

Qgd

Gate-to-Drain (`Miller') Charge

(on)

Turn-On Delay Time

VDD = 100V, ID = 13A,

Rise Time

100

VGS =12V, RG = 7.5

(off)

Turn-Off Delay Time

Fall Time

LS + LD

Total Inductance

4.0

Ciss

Input Capacitance

1043

VGS = 0V, VDS = 25V

Coss

Output Capacitance

190

f = 1.0MHz

Crss

Reverse Transfer Capacitance

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

1.67

RthJ-PCB

Junction-to-PC board

6.9

soldered to a 2" square copper-clad board

°C/W

Measured from the center of

drain pad to center of source pad

Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

ISM

Pulse Source Current (Body Diode)

VSD

Diode Forward Voltage

1.2

= 25°C, IS = 13A, VGS = 0V

trr

Reverse Recovery Time

343

Tj = 25°C, IF = 13A, di/dt

100A/

QRR Reverse Recovery Charge

2.25

VDD

25V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

www.irf.com

Pre-Irradiation

IRHNJ57230

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

Parameter

Up to 600K Rads(Si)

1000K Rads (Si)

Units

Test Conditions

Min Max Min Max
BV

DSS

Drain-to-Source Breakdown Voltage 200 -- 200 -- V V

= 0V, I

= 1.0mA

GS(th)

Gate Threshold Voltage

2.0 4.0 1.5 4.0

= V

, I

= 1.0mA

GSS

Gate-to-Source Leakage Forward

-- 100 -- 100 nA

= 20V

GSS

Gate-to-Source Leakage Reverse

-- -100 -- -100

= -20 V

DSS

Zero Gate Voltage Drain Current

-- 10 -- 25 µA V

=160V, V

=0V

DS(on)

Static Drain-to-Source

-- 0.204 -- 0.255

= 12V, I

= 8.2A

On-State Resistance (TO-3)

DS(on)

Static Drain-to-Source

-- 0.2 -- 0.25

= 12V, I

= 8.2A

On-State Resistance (SMD-.5)

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.

Radiation Characteristics

1. Part numbers IRHNJ57230, IRHNJ53230 and IRHNJ54230
2. Part number IRHNJ58230

Fig a. Single Event Effect, Safe Operating Area

Diode Forward Voltage

-- 1.2 -- 1.2 V

= 0V, IS = 13A

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

100

150

200

250

-5

-10

-15

-20

VGS

VDS

Table 2. Single Event Effect Safe Operating Area

Ion

LET

Energy Range

(V)

MeV/(mg/cm

)) (MeV) (µm) @V

=0V @V

=-5V @V

=-10V @V

=-15V @V

=-20V

36.7

309 39.5 200 200 150 150 50

59.4

341 32.5 200 200 40 35 30

82.3

350 28.4 50 35 25

IRHNJ57230

Pre-Irradiation

www.irf.com

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

0.1

100

0.1

100

20µs PULSE WIDTH
T = 25 C

TOP

BOTTOM

VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

5.0V

0.1

100

0.1

100

20µs PULSE WIDTH
T = 150 C

TOP

BOTTOM

VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

5.0V

100

5.0

6.0

7.0

8.0

9.0

10.0

V = 50V
20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

T = 25 C

T = 150 C

-60 -40 -20

80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

I =

12V

13A

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Pre-Irradiation

IRHNJ57230

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

100

400

800

1200

1600

2000

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

V
C
C
C

=
=
=
=

0V,
C
C
C

f = 1MHz

+ C

C SHORTED

GS
iss

gd ,

rss

oss

iss

oss

rss

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

SEE FIGURE

I =

13A

= 40V

= 100V

= 160V

0.1

100

0.4

0.6

0.8

1.0

1.2

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

T = 25 C

T = 150 C

0.1

100

1000

100

1000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

Single Pulse

= 150 C

= 25 C

V , Drain-to-Source Voltage (V)

I , Drain Current (A)
I , Drain Current (A)

10us

100us

1ms

10ms

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