irhnj57230se

Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 12V, TC = 25°C

Continuous Drain Current

ID @ VGS = 12V, TC = 100°C Continuous Drain Current

7.8

IDM

Pulsed Drain Current

PD @ TC = 25°C

Max. Power Dissipation

Linear Derating Factor

0.6

W/°C

VGS

Gate-to-Source Voltage

±20

EAS

Single Pulse Avalanche Energy

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

7.5

dv/dt

Peak Diode Recovery dv/dt

5.4

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Pckg. Mounting Surface Temp.

300 (for 5s)

Weight

1.0(Typical)

Pre-Irradiation

International Rectifier's R5

technology provides

high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm

)). The combination

of low R

DS(on)

and low gate charge reduces the power

losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.

RADIATION HARDENED

IRHNJ57230SE

POWER MOSFET
SURFACE MOUNT (SMD-0.5)

4/19/01

www.irf.com

200V, N-CHANNEL

TECHNOLOGY

SMD-0.5

Product Summary

Part Number Radiation Level R

DS(on)

IRHNJ57230SE 100K Rads (Si) 0.22

12A

Features:

Single Event Effect (SEE) Hardened

Ultra Low R

DS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

For footnotes refer to the last page

PD - 93836A

IRHNJ57230SE

Pre-Irradiation

www.irf.com

Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

200

VGS = 0V, ID = 1.0mA

BVDSS/

TJ Temperature Coefficient of Breakdown

0.26

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

0.22

VGS = 12V, ID = 7.8A

Resistance

VGS(th)

Gate Threshold Voltage

2.5

4.5

VDS = VGS, ID = 1.0mA

gfs

Forward Transconductance

6.0

S (

)

VDS > 15V, IDS = 7.8A

IDSS

Zero Gate Voltage Drain Current

VDS= 160V ,VGS=0V

VDS = 160V,

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

-100

VGS = -20V

Total Gate Charge

VGS =12V, ID = 12A

Qgs

Gate-to-Source Charge

9.0

VDS = 100V

Qgd

Gate-to-Drain (`Miller') Charge

(on)

Turn-On Delay Time

VDD = 100V, ID = 12A,

Rise Time

100

VGS =12V,RG = 7.5

(off)

Turn-Off Delay Time

Fall Time

LS + LD

Total Inductance

4.0

Ciss

Input Capacitance

1000

VGS = 0V, VDS = 25V

Coss

Output Capacitance

184

f = 1.0MHz

Crss

Reverse Transfer Capacitance

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

1.67

RthJ-PCB

Junction-to-PC board

6.9

soldered to a 2" square copper-clad board

°C/W

Measured from the center of

drain pad to center of source pad

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

ISM

Pulse Source Current (Body Diode)

VSD

Diode Forward Voltage

1.2

= 25°C, IS = 12A, VGS = 0V

trr

Reverse Recovery Time

300

Tj = 25°C, IF = 12A, di/dt

100A/

QRR Reverse Recovery Charge

3.2

VDD

25V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page

www.irf.com

IRHNJ57230SE

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.

Radiation Characteristics

Fig a. Single Event Effect, Safe Operating Area

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Single Event Effect Safe Operating Area

For footnotes refer to the last page

Parameter

100K Rads (Si)

Units

Test Conditions

Min

Max

DSS

Drain-to-Source Breakdown Voltage

200

= 0V, I

= 1.0mA

GS(th)

Gate Threshold Voltage

2.0

4.5

= V

, I

= 1.0mA

GSS

Gate-to-Source Leakage Forward

100

= 20V

GSS

Gate-to-Source Leakage Reverse

-100

= -20V

DSS

Zero Gate Voltage Drain Current

µA

=160V, V

=0V

DS(on)

Static Drain-to-Source

On-State Resistance (TO-3)

0.222

= 12V, I

= 7.8A

DS(on)

Static Drain-to-Source

Diode Forward Voltage

1.2

= 0V, I

= 12A

On-State Resistance (SMD-0.5)

-- 0.22

= 12V, I

= 7.8A

Ion

LET

Energy Range

(V)

MeV/(mg/cm

)) (MeV) (µm) @V

=0V @V

=-5V @V

=-10V @V

=-15V @V

=-20V

36.7

309 39.5 200 200 200 200 200

59.8

341 32.5 200 200 200 185 120

82.3

350 28.4 200 200 150

100

150

200

250

-5

-10

-15

-20

VGS

VDS

IRHNJ57230SE

Pre-Irradiation

www.irf.com

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

0.01

0.1

100

0.1

100

20µs PULSE WIDTH
T = 25 C

TOP

BOTTOM

VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

5.0V

0.1

100

0.1

100

20µs PULSE WIDTH
T = 150 C

TOP

BOTTOM

VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

5.0V

0.1

100

5.0

6.0

7.0

8.0

9.0

10.0

V = 50V
20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

T = 25 C

T = 150 C

-60 -40 -20

80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

I =

12V

12A

www.irf.com

IRHNJ57230SE

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Pre-Irradiation

100

400

800

1200

1600

2000

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

V
C
C
C

=
=
=
=

0V,
C
C
C

f = 1MHz

+ C

C SHORTED

GS
iss

gd ,

rss

oss

rss

oss

iss

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

SEE FIGURE

I =

12A

= 40V

= 100V

= 160V

0.1

100

0.3

0.6

0.9

1.2

1.5

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

T = 25 C

T = 150 C

100

1000

VDS, Drain-to-Source Voltage (V)

0.1

100

1000

I D

, Drain Current (A)

10ms

Tc = 25°C
Tj = 150°C
Single Pulse

OPERATION IN THIS AREA LIMITED
BY RDS(ON)

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