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Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 12V, TC = 25°C Continuous Drain Current

22*

ID @ VGS = 12V, TC = 100°C Continuous Drain Current 19

IDM

Pulsed Drain Current

PD @ TC = 25°C

Max. Power Dissipation

Linear Derating Factor

0.6

W/°C

VGS

Gate-to-Source Voltage

±20

EAS

Single Pulse Avalanche Energy

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

7.5

dv/dt

Peak Diode Recovery dv/dt

3.8

V/ns

Operating Junction

-55 to 150

TSTG

Storage Temperature Range
Pckg. Mounting Surface Temp.

300 (for 5s)

Weight

1.0 (Typical)

02/18/05

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100V, N-CHANNEL

TECHNOLOGY

Product Summary

Part Number Radiation Level R

DS(on)

IRHNJ67130 100K Rads (Si) 0.042

22A*

IRHNJ63130 300K Rads (Si) 0.042

22A*

For footnotes refer to the last page

Pre-Irradiation

RADIATION HARDENED IRHNJ67130
POWER MOSFET
SURFACE-MOUNT (SMD-0.5)

Features:

Low R

DS(on)

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

SMD-0.5

International Rectifier's R6

technology provides

superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer (LET)
up to 90MeV/(mg/cm

Their combination of very low

RDS(on)

and faster

switching times reduces power loss and increases
power density in today's high speed switching
applications such as DC-DC converters and motor
controllers. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, ease of paralleling and temperature stability
of electrical parameters.

* Current is limited by package

PD-95816A

IRHNJ67130

Pre-Irradiation

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Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

22*

ISM

Pulse Source Current (Body Diode)

VSD Diode Forward Voltage

1.2

= 25°C, IS = 22A, VGS = 0V Ã

trr

Reverse Recovery Time

355

Tj = 25°C, IF = 22A, di/dt 100A/µs

QRR Reverse Recovery Charge

3.0

µC

VDD 25V Ã

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

For footnotes refer to the last page

Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

100

VGS = 0V, ID = 1.0mA

BVDSS/TJ Temperature Coefficient of Breakdown

0.11

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

0.042

VGS = 12V, ID = 19A

Resistance

VGS(th)

Gate Threshold Voltage

2.0

4.0

VDS = VGS, ID = 1.0mA

gfs

Forward Transconductance

S (

)

VDS = 15V, IDS = 19A Ã

IDSS

Zero Gate Voltage Drain Current

VDS = 80V ,VGS=0V

VDS = 80V,

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

100 VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

-100

VGS = -20V

Total Gate Charge

VGS = 12V, ID = 22A

Qgs

Gate-to-Source Charge

VDS = 50V

Qgd

Gate-to-Drain (`Miller') Charge

(on)

Turn-On Delay Time

VDD = 50V, ID = 22A,

Rise Time

VGS = 12V, RG = 7.5

(off)

Turn-Off Delay Time

Fall Time

LS + LD

Total Inductance

4.0

Ciss

Input Capacitance

1730

VGS = 0V, VDS = 25V

Coss

Output Capacitance

340

f = 1.0MHz

Crss

Reverse Transfer Capacitance

6.0

µA

Measured from the center of

drain pad to center of source pad

Rg Internal Gate Resistance -- 1.03 -- f = 1.0MHz, open drain

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

RthJC

Junction-to-Case

1.67

°C/W

Note: Corresponding Spice and Saber models are available on International Rectifier Web site.

* Current is limited by package

www.irf.com

Pre-Irradiation

IRHNJ67130

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Radiation Characteristics

1. Part numbers IRHNJ67130, IRHNJ63130

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

Fig a. Single Event Effect, Safe Operating Area

100

120

-20

-15

-10

-5

VGS

VDS

Br
I
Au

Table 2. Single Event Effect Safe Operating Area

Ion

LET

Energy Range

VDS

(V)

(MeV/(mg/cm2))

(MeV)

(µm)

@VGS=

@VGS= @VGS= @VGS=

-5V

-10V

-15V

-17V

-19V

-20V

37.46

278.5

36.03

100

59.72

320

30.97

100

81.44

333

27.53

100

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

ÄÅ

Parameter

Up to 300K Rads (Si)

Units

Test Conditions

Min

Max

DSS

Drain-to-Source Breakdown Voltage

100

= 0V, I

= 1.0mA

GS(th)

Gate Threshold Voltage

2.0

4.0

= V

, I

= 1.0mA

GSS

Gate-to-Source Leakage Forward

100

= 20V

GSS

Gate-to-Source Leakage Reverse

-100

= -20V

DSS

Zero Gate Voltage Drain Current

µA

= 120V, V

= 0V

DS(on)

Static Drain-to-Source

On-State Resistance (TO-3)

0.045

= 12V, I

= 12A

DS(on)

Static Drain-to-Sourcee

Diode Forward Voltage

1.2

= 0V, I

= 19A

On-State Resistance (SMD-0.5)

-- 0.042

= 12V, I

= 12A

IRHNJ67130

Pre-Irradiation

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Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

0.1

100

1000

VDS , Drain-to-Source Voltage (V)

0.01

0.1

100

I D

,

D

r
a
i
n
-
t
o
-
S

o
u
r
c
e

C

u
r
r
e
n
t

(
A

)

µs PULSE WIDTH

Tj = 25°C

VGS

TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.0V
BOTTOM 4.5V

4.5V

0.1

100

1000.0

VDS , Drain-to-Source Voltage (V)

100

I D

,

D

r
a
i
n
-
t
o
-
S

o
u
r
c
e

C

u
r
r
e
n
t

(
A

)

µs PULSE WIDTH

Tj = 150°C

VGS

TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.0V
BOTTOM 4.5V

4.5V

VGS, Gate-to-Source Voltage (V)

0.1

100

I D

,

D

r
a
i
n
-
t
o
-
S

o
u
r
c
e

C

u
r
r
e
n
t

(
A

)

VDS = 50V
6

0µs PULSE WIDTH

TJ = 150°C

TJ = 25°C

-60 -40 -20 0

20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

(
on)

I =

12V

22A

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Pre-Irradiation

IRHNJ67130

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

100

400

800

1200

1600

2000

2400

2800

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

C
C

=
=

0V,

C
C

f = 1MHz

+ C

C SHORTED

GS
iss

gd ,

rss

oss

iss

oss

rss

QG, Total Gate Charge (nC)

,

G

a
t
e
-
t
o
-
S

o
u
r
c
e

V

o
l
t
a
g
e

(
V

)

VDS = 80V

VDS = 50V

VDS = 20V

ID = 22A

FOR TEST CIRCUIT

SEE FIGURE 13

0.4

0.6

0.8

1.0

1.2

1.4

VSD , Source-to-Drain Voltage (V)

100

I S

e
v
e
r
s
e

D

r
a
i
n

C

u
r
r
e
n
t

(
A

)

VGS = 0V

TJ = 150°C

TJ = 25°C

1.0

100

1000

VDS , Drain-toSource Voltage (V)

0.1

100

1000

I D

,

D

r
a
i
n
-
t
o
-
S

o
u
r
c
e

C

u
r
r
e
n
t

(
A

)

Tc = 25°C

Tj = 150°C

Single Pulse

1ms

10ms

OPERATION IN THIS AREA

LIMITED BY R DS(on)

100µs

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