IRHNJ7330SE.pmd

Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 12V, TC = 25°C

Continuous Drain Current

5.0

ID @ VGS = 12V, TC = 100°C Continuous Drain Current

3.2

IDM

Pulsed Drain Current

PD @ TC = 25°C

Max. Power Dissipation

Linear Derating Factor

0.6

W/°C

VGS

Gate-to-Source Voltage

±20

EAS

Single Pulse Avalanche Energy

150

IAR

Avalanche Current

5.0

EAR

Repetitive Avalanche Energy

7.5

dv/dt

Peak Diode Recovery dv/dt

1.8

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Pckg. Mounting Surface Temp.

300 (for 5s)

Weight

1.0 (Typical)

Pre-Irradiation

RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)

02/07/03

www.irf.com

SMD-0.5

Product Summary

Part Number Radiation Level R

DS(on)

QPL Part Number

IRHNJ7330SE 100K Rads (Si) 1.39

5.0A JANSR2N7465U3

Features:

Single Event Effect (SEE) Hardened

Ultra Low R

DS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

For footnotes refer to the last page

IRHNJ7330SE

JANSR2N7465U3

400V, N-CHANNEL

REF: MIL-PRF-19500/676

RAD Hard

HEXFET

TECHNOLOGY

International Rectifier's RADHard

HEXFET

MOSFET

technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low R

DS(on)

and low gate charge reduces

the power losses in switching applications such as DC to
DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.

PD - 93829B

IRHNJ7330SE, JANSR2N7465U3

Pre-Irradiation

www.irf.com

Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

400

VGS = 0V, ID = 1.0mA

BVDSS/

TJ Temperature Coefficient of Breakdown

0.48

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

1.39

VGS = 12V, ID = 3.2A

Resistance

VGS(th)

Gate Threshold Voltage

2.5

4.5

VDS = VGS, ID = 1.0mA

gfs

Forward Transconductance

1.3

S (

)

VDS > 15V, IDS = 3.2A

IDSS

Zero Gate Voltage Drain Current

VDS= 320V ,VGS=0V

250

VDS = 320V,

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

-100

VGS = -20V

Total Gate Charge

VGS =12V, ID = 5.0A

Qgs

Gate-to-Source Charge

7.0

VDS = 200V

Qgd

Gate-to-Drain (`Miller') Charge

(on)

Turn-On Delay Time

VDD = 200V, ID = 5.0A,

Rise Time

75 VGS =12V, VRG = 7.5

(off)

Turn-Off Delay Time

Fall Time

LS + LD

Total Inductance

4.0

Ciss

Input Capacitance

600

VGS = 0V, VDS = 25V

Coss

Output Capacitance

165

f = 1.0MHz

Crss

Reverse Transfer Capacitance

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

1.67

RthJ-PCB

Junction-to-PC board

6.9

soldered to a 2" square copper-clad board

°C/W

Measured from the center of

drain pad to center of source pad

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ

Max Units

Test Conditions

Continuous Source Current (Body Diode)

5.0

ISM

Pulse Source Current (Body Diode)

VSD

Diode Forward Voltage

1.2

= 25°C, IS = 5.0A, VGS = 0V

trr

Reverse Recovery Time

516

Tj = 25°C, IF = 5.0A, di/dt

100A/

QRR Reverse Recovery Charge

3.8

VDD

50V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page

www.irf.com

IRHNJ7330SE, JANSR2N7465U3

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.

Radiation Characteristics

Fig a. Single Event Effect, Safe Operating Area

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Single Event Effect Safe Operating Area

For footnotes refer to the last page

Parameter

100K Rads (Si)

Units

Test Conditions

Min

Max

DSS

Drain-to-Source Breakdown Voltage

400

= 0V, I

= 1.0mA

GS(th)

Gate Threshold Voltage

2.0

4.5

= V

, I

= 1.0mA

GSS

Gate-to-Source Leakage Forward

100

= 20V

GSS

Gate-to-Source Leakage Reverse

-100

= -20V

DSS

Zero Gate Voltage Drain Current

µA

= 320V, V

= 0V

DS(on)

Static Drain-to-Source

On-State Resistance (TO-3)

1.39

= 12V, I

= 3.2A

DS(on)

Static Drain-to-Source

Diode Forward Voltage

1.2

= 0V, I

= 5.0A

On-State Resistance (SMD-0.5)

-- 1.39

= 12V, I

= 3.2A

Ion

LET

Energy Range

(V)

MeV/(mg/cm

) (MeV) (µm) @V

=0V @V

=-5V @V

=-10V @V

=-15V

285 43 325 325 325 325

36.8

305 39 325 325 325 275

100

150

200

250

300

350

-5

-10

-15

-20

VGS

VDS

IRHNJ7330SE, JANSR2N7465U3

Pre-Irradiation

www.irf.com

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

0.1

100

0.1

100

20µs PULSE WIDTH
T = 150 C

TOP

BOTTOM

VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

5.0V

0.01

0.1

100

V = 50V
20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

T = 25 C

T = 150 C

0.001

0.01

0.1

100

0.1

100

20µs PULSE WIDTH
T = 25 C

TOP

BOTTOM

VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

5.0V

-60 -40 -20

80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

I =

12V

5.0A

www.irf.com

IRHNJ7330SE, JANSR2N7465U3

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Pre-Irradiation

100

300

600

900

1200

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

V
C
C
C

=
=
=
=

0V,
C
C
C

f = 1MHz

+ C

C SHORTED

GS
iss

gd ,

rss

oss

rss

oss

iss

0.1

100

0.4

0.8

1.2

1.6

2.0

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

T = 25 C

T = 150 C

0.1

100

1000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

Single Pulse

= 150 C

= 25 C

V , Drain-to-Source Voltage (V)

I , Drain Current (A)
I , Drain Current (A)

10us

100us

1ms

10ms

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

SEE FIGURE

I =

5.3A

= 80V

= 200V

= 320V

5.0A

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: IRHNJ7330SE

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: IRHNJ7330SE