Absolute Maximum Ratings
Parameter
Units
ID @ VGS = -12V, TC = 25C
Continuous Drain Current
-11
ID @ VGS = -12V, TC = 100C Continuous Drain Current
-7.0
IDM
Pulsed Drain Current
-44
PD @ TC = 25C
Max. Power Dissipation
75
W
Linear Derating Factor
0.6
W/C
VGS
Gate-to-Source Voltage
20
V
EAS
Single Pulse Avalanche Energy
150
mJ
IAR
Avalanche Current
-11
A
EAR
Repetitive Avalanche Energy
7.5
mJ
dv/dt
Peak Diode Recovery dv/dt
-16
V/ns
T J
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Package Mounting Surface Temp.
300 (for 5s)
Weight
1.0 (Typical)
g
Pre-Irradiation
International Rectifier's RADHard HEXFET
technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
o
C
A
RADIATION HARDENED
IRHNJ9130
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
RAD Hard
TM
HEXFET
TECHNOLOGY
7/12/01
www.irf.com
1
100V, P-CHANNEL
SMD-0.5
Product Summary
Part Number Radiation Level R
DS(on)
I
D
IRHNJ9130 100K Rads (Si)
0.29
-11A
IRHNJ93130 300K Rads (Si)
0.29
-11A
For footnotes refer to the last page
Features:
n
Single Event Effect (SEE) Hardened
n
Ultra Low R
DS(on)
n
Low Total Gate Charge
n
Proton Tolerant
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Surface Mount
n
Ceramic Package
n
Light Weight
PD - 94277
IRHNJ9130
Pre-Irradiation
2
www.irf.com
Electrical Characteristics
@ Tj = 25C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
-100
--
--
V
VGS =0 V, ID = -1.0mA
BVDSS/
TJ Temperature Coefficient of Breakdown
--
-0.11
--
V/C
Reference to 25C, ID = -1.0mA
Voltage
RDS(on)
Static Drain-to-Source
--
--
0.29
VGS = -12V, ID = - 7.0A
On-State Resistance
--
--
0.34
VGS = -12V, ID = - 11A
VGS(th)
Gate Threshold Voltage
-2.0
--
-4.0
V
VDS = VGS, ID = -1.0mA
gfs
Forward Transconductance
2.5
--
--
S (
)
VDS > -15V, IDS = - 7.0A
IDSS
Zero Gate Voltage Drain Current
--
--
-25
VDS= - 80V,VGS=0V
--
--
-250
VDS = - 80V
VGS = 0V, TJ = 125C
IGSS
Gate-to-Source Leakage Forward
--
--
-100
VGS = -20V
IGSS
Gate-to-Source Leakage Reverse
--
--
100
VGS = 20V
Qg
Total Gate Charge
--
--
45
VGS = -12V, ID = - 11A
Qgs
Gate-to-Source Charge
--
--
10
nC
VDS = - 50V
Qgd
Gate-to-Drain (`Miller') Charge
--
--
25
td
(on)
Turn-On Delay Time
--
--
30
VDD = - 50V, ID = - 11A,
tr
Rise Time
--
--
50
VGS = -12V, RG = 7.5
td
(off)
Turn-Off Delay Time
--
--
70
tf
Fall Time
--
--
70
LS + LD
Total Inductance
--
4.0
--
Ciss
Input Capacitance
--
1200
--
VGS = 0V, VDS = - 25V
Coss
Output Capacitance
--
310
--
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
--
80
--
nA
nH
ns
A
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
--
--
1.67
RthJPCB
Junction-to-PC Board
--
12
-- Soldered to 1" Sq. Copper clad Board
C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
--
--
-11
ISM
Pulse Source Current (Body Diode)
--
--
-44
VSD
Diode Forward Voltage
--
--
-3.0
V
T
j
= 25C, IS = - 11A, VGS = 0V
trr
Reverse Recovery Time
--
--
250
nS
Tj = 25C, IF = - 11A, di/dt
-100A/
s
QRR Reverse Recovery Charge
--
--
1.0
C
VDD
- 25V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Measured from the center of
drain pad to center of source pad
www.irf.com
3
Pre-Irradiation
IRHNJ9130
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
100K Rads(Si)
1
300K Rads (Si)
2
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage -100 -- -100 -- V V
GS
= 0V, I
D
= -1.0mA
V
GS(th)
Gate Threshold Voltage
- 2.0 - 4.0 -2.0 -5.0
V
GS
= V
DS
, I
D
= -1.0mA
I
GSS
Gate-to-Source Leakage Forward
-- -100 -- -100 nA
V
GS
= -20V
I
GSS
Gate-to-Source Leakage Reverse
-- 100 -- 100
V
GS
= 20 V
I
DSS
Zero Gate Voltage Drain Current
-- -25 -- -25 A V
DS
=-80V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
-- 0.3 -- 0.3
V
GS
= -12V, I
D
=-7.0A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
-- 0.29 -- 0.29
V
GS
= -12V, I
D
=-7.0A
On-State Resistance (SMD-0.5)
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
1. Part number IRHNJ9130
2. Part number IRHNJ93130
Fig a. Single Event Effect, Safe Operating Area
V
SD
Diode Forward Voltage
-- -3.0 -- -3.0 V V
GS
= 0V, IS = -11A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
-120
-100
-80
-60
-40
-20
0
0
5
10
15
20
VGS
VDS
Cu
Br
I
Table 2. Single Event Effect Safe Operating Area
Ion
L E T
Energy Range
VDS (V)
MeV/(mg/cm
2
)) (MeV) (m)
@VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V
Cu
28
285 32.6 -100 -100 -100 -70 -60
Br
36.8
305 39 -100 -100 -70 -50 -40
I
59.8
343 43 -60 -- -- --
--
IRHNJ9130
Pre-Irradiation
4
www.irf.com
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
5
6
7
9
10
11
12
V = -50V
20s PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 150 C
J
1
10
100
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
-5.0V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-5.0V
1
10
100
1
10
100
20s PULSE WIDTH
T = 150 C
J
TOP
BOTTOM
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
-5.0V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-5.0V
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
-12V
-11A
www.irf.com
5
Pre-Irradiation
IRHNJ9130
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
0
500
1000
1500
2000
-V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
C
iss
C
oss
C
rss
0
10
20
30
40
50
60
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
-11A
V
= -20V
DS
V
= -50V
DS
V
= -80V
DS
0.1
1
10
100
0.0
1.0
2.0
3.0
4.0
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 150 C
J
1
10
100
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
J
C
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)
I , Drain Current (A)
DS
D
100us
1ms
10ms
PDF 
ZIP