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RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-28)
08/01/01
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1
LCC-28
IRHQ57110
100V, Quad N-CHANNEL
RAD-Hard
TM
HEXFET
TECHNOLOGY
International Rectifier's RAD-Hard
TM
HEXFET
MOSFET
Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite applica-
tions. These devices have been characterized for both
Total Dose and Single Event Effects (SEE). The combina-
tion of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC con-
verters and motor control. These devices retain all of the
well established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and tempera-
ture stability of electrical parameters.
Features:
n
Single Event Effect (SEE) Hardened
n
Low R
DS(on)
n
Low Total Gate Charge
n
Proton Tolerant
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Ceramic Package
n
Surface Mount
n
Light Weight
4
4
#
Product Summary
Part Number Radiation Level R
DS(on)
I
D
IRHQ57110 100K Rads (Si) 0.27
4.6A
IRHQ53110 300K Rads (Si) 0.27
4.6A
IRHQ54110 600K Rads (Si) 0.27
4.6A
IRHQ58110 1000K Rads (Si) 0.29
4.6A
Absolute Maximum Ratings (Per Die)
Parameter
Units
ID @ VGS = 12V, TC = 25C
Continuous Drain Current
4.6
ID @ VGS = 12V, TC = 100C Continuous Drain Current
2.9
IDM
Pulsed Drain Current
18.4
PD @ TC = 25C
Max. Power Dissipation
12
W
Linear Derating Factor
0.1
W/C
VGS
Gate-to-Source Voltage
20
V
EAS
Single Pulse Avalanche Energy
47
mJ
IAR
Avalanche Current
4.6
A
EAR
Repetitive Avalanche Energy
1.2
mJ
dv/dt
Peak Diode Recovery dv/dt
6.1
V/ns
T J
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Pckg. Mounting Surface Temp.
300 (for 5s)
Weight
0.89 (Typical)
g
o
C
A
For footnotes refer to the last page
Pre-Irradiation
PD - 94211A
IRHQ57110
Pre-Irradiation
2
www.irf.com
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
--
--
4.6
ISM
Pulse Source Current (Body Diode)
--
--
18.4
VSD
Diode Forward Voltage
--
--
1.2
V
T
j
= 25C, IS = 4.6A, VGS = 0V
trr
Reverse Recovery Time
--
--
173
nS
Tj = 25C, IF = 4.6A, di/dt
100A/
s
QRR Reverse Recovery Charge
--
--
863
nC
VDD
25V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Electrical Characteristics
@ Tj = 25C (Unless Otherwise Specified)
(Per Die)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
100
--
--
V
VGS = 0V, ID = 1.0mA
BVDSS/
TJ Temperature Coefficient of Breakdown
--
0.13
--
V/C
Reference to 25C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
--
--
0.31
VGS = 12V, ID = 4.6A
Resistance
--
--
0.27
VGS = 12V, ID = 2.9A
VGS(th)
Gate Threshold Voltage
2.0
--
4.0
V
VDS = VGS, ID = 1.0mA
gfs
Forward Transconductance
3.3
--
--
S (
)
VDS > 15V, IDS = 2.9A
IDSS
Zero Gate Voltage Drain Current
--
--
10
VDS= 80V, VGS=0V
--
--
25
VDS = 80V,
VGS = 0V, TJ = 125C
IGSS
Gate-to-Source Leakage Forward
--
--
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
--
--
-100
VGS = -20V
Qg
Total Gate Charge
--
--
13
VGS = 12V, ID = 4.6A
Qgs
Gate-to-Source Charge
--
--
4.0
nC
VDS = 50V
Qgd
Gate-to-Drain (`Miller') Charge
--
--
3.9
td
(on)
Turn-On Delay Time
--
--
20
VDD = 50V, ID = 4.6A,
tr
Rise Time
--
--
24
VGS = 12V, RG = 7.5
td
(off)
Turn-Off Delay Time
--
--
32
tf
Fall Time
--
--
90
LS + LD
Total Inductance
--
6.1
--
Ciss
Input Capacitance
--
371
--
VGS = 0V, VDS = 25V
Coss
Output Capacitance
--
108
--
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
--
3.0
--
nA
nH
ns
A
Measured from the center of
drain pad to center of source pad
Note: Corresponding Spice and Saber models are available on the G&S Website.
Thermal Resistance (Per Die)
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
--
--
11.8
RthJA
Junction-to-Ambient
--
--
60
Typical socket mount
C/W
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3
Pre-Irradiation
IRHQ57110
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
(Per Die)
Parameter
Up to 600K Rads(Si)
1
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 100 -- 100 -- V V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 1.5 4.5 V
GS
= V
DS
, I
D
= 1.0mA
I
GSS
Gate-to-Source Leakage Forward
-- 100 -- 100 nA
V
GS
= 20V
I
GSS
Gate-to-Source Leakage Reverse
-- -100 -- -100
V
GS
= -20 V
I
DSS
Zero Gate Voltage Drain Current
--
10 -- 25 A V
DS
= 80V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
-- 0.226 -- 0.246
V
GS
= 12V, I
D
= 2.9A
On-State Resistance (TO-39)
R
DS(on)
Static Drain-to-Source
-- 0.27 -- 0.29
V
GS
= 12V, I
D
= 2.9A
On-State Resistance (LCC-28)
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part number IRHQ57110, IRHQ53110, IRHQ54110
2. Part number IRHQ58110
Fig a. Single Event Effect, Safe Operating Area
V
SD
Diode Forward Voltage
--
1.2 -- 1.2 V
V
GS
= 0V, IS = 4.6A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area (Per Die)
Ion
LET
Energy Range
V
DS
(V)
MeV/(mg/cm
2
)) (MeV) (m) @V
GS
=0V @V
GS
=-5V @V
GS
=-10V @V
GS
=-15V @V
GS
=-20V
Cu
28.0
285 43.0 100 100 100 100 70
Br
36.8
305 39.0 100 80 70 50 --
I
59.8
343 32.6 50 40 35 -- --
0
20
40
60
80
100
120
0
-5
-10
-15
-20
-25
VGS
VDS
Cu
Br
I
1000K Rads (Si)
2
IRHQ57110
Pre-Irradiation
4
www.irf.com
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
0.1
1
10
100
20s PULSE WIDTH
T = 150 C
J
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
0.1
1
10
100
5.0
6.0
7.0
8.0
9.0
10.0
V = 25V
20s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 150 C
J
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
12V
4.6A
0.1
1
10
100
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
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5
Pre-Irradiation
IRHQ57110
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 150 C
J
1
10
100
0
200
400
600
800
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss
0
4
8
12
16
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
4.6A
V
= 20V
DS
V
= 50V
DS
V
= 80V
DS
1
10
100
1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
I D
, Drain-to-Source Current (A)
Tc = 25C
Tj = 150C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA
LIMITED BY RDS(on)
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