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Absolute Maximum Ratings (Per Die)
Parameter
Units
ID @ VGS = 12V, TC = 25C
Continuous Drain Current
1.9
ID @ VGS = 12V, TC = 100C
Continuous Drain Current
1.2
IDM
Pulsed Drain Current
7.6
PD @ TC = 25C
Max. Power Dissipation
12
W
Linear Derating Factor
0.1
W/C
VGS
Gate-to-Source Voltage
20
V
EAS
Single Pulse Avalanche Energy
30
mJ
IAR
Avalanche Current
1.9
A
EAR
Repetitive Avalanche Energy
1.2
mJ
dv/dt
Peak Diode Recovery dv/dt
9.9
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Pckg. Mounting Surface Temp.
300 (for 5s)
Weight
0.89 (Typical)
g
Pre-Irradiation
International Rectifier's R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
f o r S i n g l e E v e n t E f f e c t s ( S E E ) w i t h u s e f u l
performance up to an LET of 80 (MeV/(mg/cm
2
)). The
combination of low R
DS(on)
and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control.
These devices retain all of the well established
advantages of MOSFETs such as voltage control, fast
switching, ease of paralleling and temperature
stability of electrical parameters.
o
C
A
RADIATION HARDENED
IRHQ57214SE
POWER MOSFET
SURFACE MOUNT (LCC-28)
05/19/05
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1
250V, QUAD N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level R
DS(on)
I
D
IRHQ57214SE 100K Rads (Si) 1.5
1.9A
For footnotes refer to the last page
5
5
LCC-28
Features:
n
Single Event Effect (SEE) Hardened
n
Low R
DS(on)
n
Low Total Gate Charge
n
Proton Tolerant
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Ceramic Package
n
Surface Mount
n
Light Weight
PD-93881C
IRHQ57214SE
Pre-Irradiation
2
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Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
Electrical Characteristics
@ Tj = 25C (Unless Otherwise Specified) (Per Die)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
250
--
--
V
VGS = 0V, ID = 1.0mA
BVDSS/TJ Temperature Coefficient of Breakdown
--
0.28
--
V/C
Reference to 25C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
--
--
1.5
VGS = 12V, ID = 1.2A
Resistance
VGS(th)
Gate Threshold Voltage
2.5
--
4.5
V
VDS = VGS, ID = 1.0mA
gfs
Forward Transconductance
1.4
--
--
S (
)
VDS > 15V, IDS = 1.2A
IDSS
Zero Gate Voltage Drain Current
--
--
10
VDS= 200V ,VGS=0V
--
--
25
VDS = 200V,
VGS = 0V, TJ = 125C
IGSS
Gate-to-Source Leakage Forward
--
--
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
--
--
-100
VGS = -20V
Qg
Total Gate Charge
--
--
8.0
VGS =12V, ID = 1.9A
Qgs
Gate-to-Source Charge
--
--
2.1
nC
VDS = 125V
Qgd
Gate-to-Drain (`Miller') Charge
--
--
3.4
td
(on)
Turn-On Delay Time
--
--
25
VDD = 125V, ID = 1.9A
tr
Rise Time
--
--
20
VGS =12V, RG = 7.5
td
(off)
Turn-Off Delay Time
--
--
35
tf
Fall Time
--
--
20
LS + LD
Total Inductance
--
6.1
--
Measured from the center of
drain pad to center of source pad
Ciss
Input Capacitance
--
338
--
VGS = 0V, VDS = 25V
Coss
Output Capacitance
--
53
--
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
--
2.6
--
nA
nH
ns
A
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
--
--
1.9
ISM
Pulse Source Current (Body Diode)
--
--
7.6
VSD
Diode Forward Voltage
--
--
1.2
V
T
j
= 25C, IS = 1.9A, VGS = 0V
trr
Reverse Recovery Time
--
--
168
ns
Tj = 25C, IF = 1.9A, di/dt 100A/s
QRR Reverse Recovery Charge
--
--
771
nC
VDD 25V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Thermal Resistance (Per Die)
Parameter
Min Typ Max Units
Test Conditions
RthJC
Junction-to-Case
--
--
10.4
C/W
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3
IRHQ57214SE
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
(Per Die)
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
Fig a. Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area (Per Die)
For footnotes refer to the last page
Parameter
100K Rads (Si)
Units
Test Conditions
Min
Max
BV
DSS
Drain-to-Source Breakdown Voltage
250
--
V
V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0
4.5
V
GS
= V
DS
, I
D
= 1.0mA
I
GSS
Gate-to-Source Leakage Forward
--
100
nA
V
GS
= 20V
I
GSS
Gate-to-Source Leakage Reverse
--
-100
V
GS
= -20V
I
DSS
Zero Gate Voltage Drain Current
--
10
A
V
DS
= 200V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-3)
--
1.45
V
GS
= 12V, I
D
= 1.2A
R
DS(on)
Static Drain-to-Source
V
SD
Diode Forward Voltage
--
1.2
V
V
GS
= 0V, I
D
= 1.9A
On-State Resistance (LCC-28)
-- 1.5
V
GS
= 12V, I
D
= 1.2A
Ion
LET
Energy Range
V
DS
(V)
MeV/(mg/cm
2
)) (MeV) (m) @V
GS
=0V @V
GS
=-5V @V
GS
=-10V @V
GS
=-15V @V
GS
=-20V
Br
36.7
309 39.5 250 250 250 250 250
I
59.8
341 32.5 250 250 250 250 240
Au
82.3
350 28.4 250 250 225 175
50
0
50
100
150
200
250
300
0
-5
-10
-15
-20
VGS
VD
S
Br
I
Au
IRHQ57214SE
Pre-Irradiation
4
www.irf.com
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
15
0.1
1
10
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
0.1
1
10
0.1
1
10
100
20s PULSE WIDTH
T = 150 C
J
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V , Drain-to-Source Voltage (V)
I , D
r
a
i
n
-
to
-S
o
u
r
ce
C
u
rre
n
t
(A
)
DS
D
5.0V
0.1
1
10
5.0
6.0
7.0
8.0
V = 50V
20s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 150 C
J
I
D
'
Drain-to-Source Current (A)
-60 -40 -20
0
20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R
, D
r
ain-to-S
ource O
n
R
e
sistance
(Norm
a
l
i
z
ed)
J
D
S
(
on)
V
=
I =
GS
D
12V
1.9A
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5
IRHQ57214SE
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Pre-Irradiation
1
10
100
0
100
200
300
400
500
600
V , Drain-to-Source Voltage (V)
C, Capaci
t
ance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
C
iss
C
oss
C
rss
0
4
8
12
16
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
1.9A
V
= 50V
DS
V
= 125V
DS
V
= 200V
DS
0.1
1
10
0.2
0.6
0.9
1.3
1.6
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 150 C
J
0.1
1
10
100
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
J
C
V , Drain-to-Source Voltage (V)
I
,
Drai
n Current
(A)
I
,
Drai
n Current
(A)
DS
D
10us
100us
1ms
10ms
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