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Absolute Maximum Ratings

Parameter

N-Channel

P-Channel

Units

ID @ VGS = 12V, TC = 25°C

Continuous Drain Current

3.0

-2.3

ID @ VGS = 12V, TC = 100°C Continuous Drain Current

1.9

-1.5

IDM

Pulsed Drain Current

-9.2

PD @ TC = 25°C

Max. Power Dissipation

Linear Derating Factor

0.1

W/°C

VGS

Gate-to-Source Voltage

±20

EAS

Single Pulse Avalanche Energy

IAR

Avalanche Current

3.0

-2.3

EAR

Repetitive Avalanche Energy

1.2

dv/dt

Peak Diode Recovery dv/dt

3.0

9.0

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Pckg. Mounting Surface Temp.

300 (for 5s)

Weight

0.89 (Typical)

Pre-Irradiation

RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-28)

03/24/04

www.irf.com

Product Summary

Part Number Radiation Level R

DS(on)

CHANNEL

IRHQ6110 100K Rads (Si)

0.6

3.0A

IRHQ63110 300K Rads (Si)

0.6

3.0A

IRHQ6110 100K Rads (Si)

1.1

-2.3A

IRHQ63110 300K Rads (Si)

1.1

-2.3A

For footnotes, refer to the last page

LCC-28

IRHQ6110

100V, Combination 2N-2P-CHANNEL

RAD-Hard

HEXFET

MOSFET TECHNOLOGY

International Rectifier's RAD-Hard

HEXFET

MOSFET

Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite applica-
tions. These devices have been characterized for both
Total Dose and Single Event Effects (SEE). The combina-
tion of low R

DS(on)

and low gate charge reduces the power

losses in switching applications such as DC to DC con-
verters and motor control. These devices retain all of the
well established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and tempera-
ture stability of electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Low R

DS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Surface Mount

Light Weight

PD - 91781B

IRHQ6110

Pre-Irradiation

www.irf.com

For footnotes, refer to the last page

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

3.0

ISM

Pulse Source Current (Body Diode)

VSD

Diode Forward Voltage

1.2

= 25°C, IS = 3.0A, VGS = 0V

trr

Reverse Recovery Time

173

Tj = 25°C, IF = 3.0A, di/dt

100A/

QRR Reverse Recovery Charge

863

VDD

25V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

10.4

Electrical Characteristics For Each N-Channel Device

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

100

VGS = 0V, ID = 1.0mA

BVDSS/

TJ Temperature Coefficient of Breakdown

0.11

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

0.62

VGS = 12V, ID = 3.0A

Resistance

0.60

VGS = 12V, ID = 1.9A

VGS(th)

Gate Threshold Voltage

2.0

4.0

VDS = VGS, ID = 1.0mA

gfs

Forward Transconductance

1.4

S (

)

VDS > 15V, IDS = 1.9A

IDSS

Zero Gate Voltage Drain Current

VDS= 80V, VGS=0V

250

VDS = 80V,

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

-100

VGS = -20V

Total Gate Charge

VGS = 12V, ID = 3.0A

Qgs

Gate-to-Source Charge

4.0

VDS = 50V

Qgd

Gate-to-Drain (`Miller') Charge

5.5

(on)

Turn-On Delay Time

VDD = 50V, ID = 3.0A,

Rise Time

VGS = 12V, RG = 7.5

(off)

Turn-Off Delay Time

Fall Time

LS + LD

Total Inductance

6.1

Ciss

Input Capacitance

270

VGS = 0V, VDS = 25V

Coss

Output Capacitance

110

f = 1.0MHz

Crss

Reverse Transfer Capacitance

Measured from the center of

drain pad to center of source pad

°C/W

Note: Corresponding Spice and Saber models are available on International Rectifier Website.

www.irf.com

Pre-Irradiation

IRHQ6110

For footnotes, refer to the last page

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

-2.3

ISM

Pulse Source Current (Body Diode)

-9.2

VSD

Diode Forward Voltage

-3.0

= 25°C, IS = -2.3A, VGS = 0V

trr

Reverse Recovery Time

138

Tj = 25°C, IF = -2.3A, di/dt

100A/

QRR Reverse Recovery Charge

555

VDD

-25V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

10.4

Electrical Characteristics

For Each P-Channel Device

@ Tj = 25°C

(Unless Otherwise Specified)

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

-100

VGS = 0V, ID = -1.0mA

BVDSS/

TJ Temperature Coefficient of Breakdown

-0.10

V/°C

Reference to 25°C, ID = -1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

1.1

VGS = -12V, ID = -1.5A

Resistance

VGS(th)

Gate Threshold Voltage

-2.0

-4.0

VDS = VGS, ID = -1.0mA

gfs

Forward Transconductance

1.1

S (

)

VDS > -15V, IDS = -1.5A

IDSS

Zero Gate Voltage Drain Current

-25

VDS= -80V, VGS=0V

-250

VDS = -80V,

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

-100

VGS = -20V

IGSS

Gate-to-Source Leakage Reverse

100

VGS = 20V

Total Gate Charge

VGS = -12V, ID = -2.3A

Qgs

Gate-to-Source Charge

4.3

VDS = -50V

Qgd

Gate-to-Drain (`Miller') Charge

3.3

(on)

Turn-On Delay Time

VDD = -50V, ID = -2.3A,

Rise Time

VGS = -12V, RG = 7.5

(off)

Turn-Off Delay Time

Fall Time

LS + LD

Total Inductance

6.1

Ciss

Input Capacitance

285

VGS = 0V, VDS = -25V

Coss

Output Capacitance

f = 1.0MHz

Crss

Reverse Transfer Capacitance

Measured from the center of

drain pad to center of source pad

°C/W

IRHQ6110

Pre-Irradiation

www.irf.com

Table 1. Electrical Characteristics For Each N-Channel Device @ Tj = 25°C, Post Total Dose Irradiation

Parameter

100K Rads(Si)

300K to 1000K Rads (Si)

Units

Test Conditions

Min Max Min Max

DSS

Drain-to-Source Breakdown Voltage 100 -- 100 -- V V

= 0V, I

= 1.0mA

GS(th)

Gate Threshold Voltage

2.0 4.0 1.25 4.5 V

= V

, I

= 1.0mA

GSS

Gate-to-Source Leakage Forward

-- 100 -- 100 nA

= 20V

GSS

Gate-to-Source Leakage Reverse

-- -100 -- -100

= -20 V

DSS

Zero Gate Voltage Drain Current

-- 25 -- 25 µA V

= 80V, V

=0V

DS(on)

Static Drain-to-Source

-- 0.556 -- 0.706

= 12V, I

= 1.9A

On-State Resistance (TO-39)

DS(on)

Static Drain-to-Source

-- 0.60 -- 0.75

= 12V, I

= 1.9A

On-State Resistance (LCC-28)

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.

1. Part number IRHQ6110
2. Part number IRHQ63110

Fig a. Single Event Effect, Safe Operating Area

Diode Forward Voltage

-- 1.2 -- 1.2 V

= 0V, IS = 3.0A

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes, refer to the last page

Table 2. Single Event Effect Safe Operating Area

Ion

LET

Energy Range

(V)

MeV/(mg/cm

)) (MeV) (µm) @V

=0V @V

=-5V @V

=-10V @V

=-15V @V

=-20V

28.0

285 43.0 100 100 100 100 70

36.8

305 39.0 100 80 70 50 --

59.8

343 32.6 50 40 35 -- --

100

120

-5

-10

-15

-20

-25

VGS

VDS

www.irf.com

Pre-Irradiation

IRHQ6110

Fig a. Single Event Effect, Safe Operating Area

For footnotes, refer to the last page

Table 2. Single Event Effect Safe Operating Area

Ion

LET

Energy Range

(V)

MeV/(mg/cm

)) (MeV) (µm) @V

=0V @V

=5V @V

=10V @V

=15V @V

=20V

28.0

285 43.0 -100 -100 -100 -70 -60

36.8

305 39.0 -100 -100 -70 - 50 -40

59.8

343 32.6 -60 -- -- -- --

-120

-100

-80

-60

-40

-20

VGS

VDS

Table 1. Electrical Characteristics For Each P-Channel Device @ Tj = 25°C, Post Total Dose Irradiation

Parameter

100K Rads(Si)

300K to 1000K Rads (Si)

Units

Test Conditions

Min Max Min Max

DSS

Drain-to-Source Breakdown Voltage -100 -- -100 -- V V

= 0V, I

= -1.0mA

GS(th)

Gate Threshold Voltage

- 2.0 -4.0 - 2.0 -5.0 V

= V

, I

= -1.0mA

GSS

Gate-to-Source Leakage Forward

-- -100 -- -100 nA

= -20V

GSS

Gate-to-Source Leakage Reverse

-- 100 -- 100

= 20 V

DSS

Zero Gate Voltage Drain Current

-- -25 -- - 25 µA V

= -80V, V

=0V

DS(on)

Static Drain-to-Source

-- 1.056 -- 1.056

= -12V, I

= -1.5A

On-State Resistance (TO-39)

DS(on)

Static Drain-to-Source

-- 1.1 -- 1.1

= -12V, I

= -1.5A

On-State Resistance (LCC-28)

1. Part numbers IRHQ6110
2. Part number IRHQ63110

Diode Forward Voltage

-- -3.0 -- -3.0 V V

= 0V, IS = -2.3A

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ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: IRHQ63110