Absolute Maximum Ratings
Parameter
Units
ID @ VGS = 12V, TC = 25C
Continuous Drain Current
12
ID @ VGS = 12V, TC = 100C Continuous Drain Current
7.8
IDM
Pulsed Drain Current
48
PD @ TC = 25C
Max. Power Dissipation
75
W
Linear Derating Factor
0.6
W/C
VGS
Gate-to-Source Voltage
20
V
EAS
Single Pulse Avalanche Energy
60
mJ
IAR
Avalanche Current
12
A
EAR
Repetitive Avalanche Energy
7.5
mJ
dv/dt
Peak Diode Recovery dv/dt
5.4
V/ns
T J
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 (0.063in./1.6mm from case for 10sec)
Weight
4.3( Typical )
g
Pre-Irradiation
International Rectifier's R5
TM
technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
o
C
A
RADIATION HARDENED
IRHY57230CMSE
POWER MOSFET
THRU-HOLE ( TO-257AA)
01/31/01
www.irf.com
1
200V, N-CHANNEL
c
TECHNOLOGY
TO-257AA
Product Summary
Part Number Radiation Level R
DS(on)
I
D
IRHY57230CMSE 100K Rads (Si) 0.23
12A
Features:
n
Single Event Effect (SEE) Hardened
n
Ultra Low R
DS(on)
n
Low Total Gate Charge
n
Proton Tolerant
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Ceramic Package
n
Light Weight
For footnotes refer to the last page
4
4
#
PD - 93822
IRHY57230CMSE
Pre-Irradiation
2
www.irf.com
Electrical Characteristics
@ Tj = 25C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
200
--
--
V
VGS = 0V, ID = 1.0mA
BVDSS/
TJ Temperature Coefficient of Breakdown
--
0.26
--
V/C
Reference to 25C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
--
--
0.23
VGS = 12V, ID = 7.8A
Resistance
VGS(th)
Gate Threshold Voltage
2.5
--
4.5
V
VDS = VGS, ID = 1.0mA
gfs
Forward Transconductance
6.0
--
--
S (
)
VDS > 15V, IDS = 7.8A
IDSS
Zero Gate Voltage Drain Current
--
--
10
VDS= 160V ,VGS=0V
--
--
25
VDS = 160V,
VGS = 0V, TJ = 125C
IGSS
Gate-to-Source Leakage Forward
--
--
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
--
--
-100
VGS = -20V
Qg
Total Gate Charge
--
--
28
VGS =12V, ID = 12A
Qgs
Gate-to-Source Charge
--
--
7.4
nC
VDS = 100V
Qgd
Gate-to-Drain (`Miller') Charge
--
--
12
td
(on)
Turn-On Delay Time
--
--
25
VDD = 100V, ID = 12A,
tr
Rise Time
--
--
100
VGS =12V, RG = 7.5
td
(off)
Turn-Off Delay Time
--
--
35
tf
Fall Time
--
--
30
LS + LD
Total Inductance
--
6.8
--
Ciss
Input Capacitance
--
1000
--
VGS = 0V, VDS = 25V
Coss
Output Capacitance
--
184
--
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
--
11
--
nA
nH
ns
A
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
--
--
1.67
RthJA
Junction-to-Ambient
--
--
80
Typical Socket Mount
C/W
Measured from drain lead (6mm
0.25in. from package) to source
lead (6mm/0.25in. from package)
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
--
--
12
ISM
Pulse Source Current (Body Diode)
--
--
48
VSD
Diode Forward Voltage
--
--
1.2
V
T
j
= 25C, IS = 12A, VGS = 0V
trr
Reverse Recovery Time
--
--
300
nS
Tj = 25C, IF = 12A, di/dt
100A/
s
QRR Reverse Recovery Charge
--
--
3.2
C
VDD
25V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
www.irf.com
3
IRHY57230CMSE
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
Fig a. Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
For footnotes refer to the last page
Parameter
100K Rads (Si)
Units
Test Conditions
Min
Max
BV
DSS
Drain-to-Source Breakdown Voltage
200
--
V
V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0
4.5
V
GS
= V
DS
, I
D
= 1.0mA
I
GSS
Gate-to-Source Leakage Forward
--
100
nA
V
GS
= 20V
I
GSS
Gate-to-Source Leakage Reverse
--
-100
V
GS
= -20V
I
DSS
Zero Gate Voltage Drain Current
--
10
A
V
DS
=160V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-3)
--
0.232
V
GS
= 12V, I
D
= 7.8A
R
DS(on)
Static Drain-to-Source
V
SD
Diode Forward Voltage
--
1.2
V
V
GS
= 0V, I
D
= 12A
On-State Resistance (TO-257AA) -- 0.23
V
GS
= 12V, I
D
= 7.8A
Ion
LET
Energy Range
V
DS
(V)
MeV/(mg/cm
2
)) (MeV) (m) @V
GS
=0V @V
GS
=-5V @V
GS
=-10V @V
GS
=-15V @V
GS
=-20V
Br
36.7
309 39.5 200 200 200 200 200
I
59.8
341 32.5 200 200 200 185 120
Au
82.3
350 28.4 200 200 150
50
25
0
50
100
150
200
250
0
-5
-10
-15
-20
VGS
VDS
Br
I
Au
IRHY57230CMSE
Pre-Irradiation
4
www.irf.com
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
15
0.01
0.1
1
10
100
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
0.1
1
10
100
0.1
1
10
100
20s PULSE WIDTH
T = 150 C
J
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
0.1
1
10
100
5.0
6.0
7.0
8.0
9.0
10.0
V = 50V
20s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 150 C
J
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
12V
12A
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5
IRHY57230CMSE
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Pre-Irradiation
1
10
100
0
400
800
1200
1600
2000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
C
rss
C
oss
C
iss
0
10
20
30
40
50
0
5
10
15
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
12A
V
= 40V
DS
V
= 100V
DS
V
= 160V
DS
0.1
1
10
100
0.3
0.6
0.9
1.2
1.5
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 150 C
J
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
, Drain Current (A)
10ms
Tc = 25C
Tj = 150C
Single Pulse
OPERATION IN THIS AREA LIMITED
BY RDS(ON)
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