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Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 12V, TC = 25°C

Continuous Drain Current

1.2

ID @ VGS = 12V, TC = 100°C Continuous Drain Current

0.76

IDM

Pulsed Drain Current

4.8

PD @ TC = 25°C

Max. Power Dissipation

Linear Derating Factor

0.4

W/°C

VGS

Gate-to-Source Voltage

±20

EAS

Single Pulse Avalanche Energy

IAR

Avalanche Current

1.2

EAR

Repetitive Avalanche Energy

5.0

dv/dt

Peak Diode Recovery dv/dt

3.0

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Lead Temperature

300 (0.063in./1.6mm from case for 10sec)

Weight

4.3 (Typical)

Pre-Irradiation

RADIATION HARDENED

IRHY7G30CMSE

POWER MOSFET
THRU-HOLE (TO-257AA)

07/24/01

www.irf.com

1000V, N-CHANNEL

Product Summary

Part Number Radiation Level R

DS(on)

IRHY7G30CMSE

100K Rads (Si)

1.2A

Features:

Single Event Effect (SEE) Hardened

Ultra Low R

DS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Light Weight

For footnotes refer to the last page

TO-257AA

International Rectifier's RADHard

HEXFET

MOSFET

technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low R

DS(on)

and low gate charge reduces

the power losses in switching applications such as DC to
DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.

RAD Hard

HEXFET

TECHNOLOGY

PD - 93973D

IRHY7G30CMSE

Pre-Irradiation

www.irf.com

Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

1000

VGS = 0V, ID = 1.0mA

BVDSS/

TJ Temperature Coefficient of Breakdown

1.3

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

VGS = 12V, ID = 0.76A

Resistance

VGS(th)

Gate Threshold Voltage

2.5

4.5

VDS = VGS, ID = 1.0mA

gfs

Forward Transconductance

0.8

S (

)

VDS > 15V, IDS = 0.76A

IDSS

Zero Gate Voltage Drain Current

VDS = 800V ,VGS=0V

250

VDS = 800V,

VGS = 0V, TJ =125°C

IGSS

Gate-to-Source Leakage Forward

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

-100

VGS = -20V

Total Gate Charge

VGS =12V, ID = 1.2A

Qgs

Gate-to-Source Charge

6.0

VDS = 300V

Qgd

Gate-to-Drain (`Miller') Charge

(on)

Turn-On Delay Time

VDD = 500V, ID = 1.2A,

Rise Time

VGS =12V, RG = 7.5

(off)

Turn-Off Delay Time

Fall Time

150

LS + LD

Total Inductance

6.8

Ciss

Input Capacitance

377

VGS = 0V, VDS = 25V

Coss

Output Capacitance

f = 1.0MHz

Crss

Reverse Transfer Capacitance

1.4

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

2.5

°C/W

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

1.2

ISM

Pulse Source Current (Body Diode)

4.8

VSD

Diode Forward Voltage

1.2

= 25°C, IS = 1.2A, VGS = 0V

trr

Reverse Recovery Time

500

Tj = 25°C, IF = 1.2A, di/dt

100A/

QRR Reverse Recovery Charge

690

VDD

50V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Measured from drain lead (6mm/

0.25in. from package) to source

lead (6mm/0.25in. from package)

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.

Radiation Characteristics

Fig a. Single Event Effect, Safe Operating Area

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

www.irf.com

IRHY7G30CMSE

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

Parameter

100K Rads (Si)

Units

Test Conditions

Min

Max

DSS

Drain-to-Source Breakdown Voltage

1000

= 0V, I

= 1.0mA

GS(th)

Gate Threshold Voltage

1.4

4.5

= V

, I

= 1.0mA

GSS

Gate-to-Source Leakage Forward

100

= 20V

GSS

Gate-to-Source Leakage Reverse

-100

= -20V

DSS

Zero Gate Voltage Drain Current

µA

=800V, V

=0V

DS(on)

Static Drain-to-Source

On-State Resistance (TO-3)

= 12V, I

= 0.76A

DS(on)

Static Drain-to-Source

Diode Forward Voltage

1.2

= 0V, I

= 1.2A

On-State Resistance (TO-257)

-- 15

= 12V, I

= 0.76A

100

200

300

400

500

600

700

800

900

-5

-10

-15

-20

VGS

VDS

Table 2. Single Event Effect Safe Operating Area

Ion

LET

Energy Range

(V)

MeV/(mg/cm

)) (MeV) (µm) @V

=0V @V

=-5V @V

=-10V @V

=-15V

59.8

343 32.6 400 400 350 250

36.8

305 39 775 775 775 775

=-20V

200

775

IRHY7G30CMSE

Pre-Irradiation

www.irf.com

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

0.1

100

20µs PULSE WIDTH
T = 25 C

TOP

BOTTOM

VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

0.1

100

20µs PULSE WIDTH
T = 150 C

TOP

BOTTOM

VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

0.1

5.0

6.0

7.0

8.0

9.0

10.0

V = 50V
20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

T = 150 C

T = 25 C

-60 -40 -20

80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

I =

12V

1.2A

100V

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Pre-Irradiation

IRHY7G30CMSE

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

100

250

500

750

1000

1250

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

V
C
C
C

=
=
=
=

0V,
C
C
C

f = 1MHz

+ C

C SHORTED

GS
iss

gd ,

rss

oss

rss

oss

iss

0.1

0.4

0.5

0.6

0.7

0.8

0.9

1.0

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

T = 25 C

T = 150 C

100

1000

10000

VDS , Drain-toSource Voltage (V)

0.01

0.1

100

I D

, Drain-to-Source Current (A)

Tc = 25°C
Tj = 150°C
Single Pulse

1ms

0ms

OPERATION IN THIS AREA
LIMITED BY RDS(on)

100µs

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

SEE FIGURE

I =

1.2A

= 200V

= 500V

= 800V

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