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IRIS-A6351
Features
Oscillator is provided on the monolithic control IC with adopting On-Chip-
Trimming technology.
Small temperature characteristics variation by adopting a comparator to
compensate for temperature on the control part.
Low start-up circuit current (50uA max)
Built-in Active Low-Pass Filter for stabilizing the operation in case of light
load
Avalanche energy guaranteed MOSFET with high VDSS
The built-in power MOSFET simplifies the surge absorption circuit
since the MOSFET guarantees the avalanche energy.
No VDSS de-rating is required.
Built-in constant voltage drive circuit
Various kinds of protection functions
Pulse-by-pulse Overcurrent Protection (OCP)
Overvoltage Protection with latch mode (OVP)
Thermal Shutdown with latch mode (TSD)
INTEGRATED SWITCHER
Package Outline
8 Lead PDIP
Descriptions
IRIS-A6351 is a hybrid IC consists from power MOSFET and a controller IC, designed for PRC fly-back converter type
SMPS (Switching Mode Power Supply) applications, applicable for PRC operation for small power SMPS. This IC
realizes downsizing and standardizing of a power supply system reducing external components count and simplifying
the circuit designs. (Note). PRC is abbreviation of "Pulse Ratio Control" (On-width control with fixed OFF-time).
Typical Connection Diagram
1
1
1
1
2
2
2
2
3
3
3
3
4
4
4
4
8
8
8
8
7
7
7
7
6
6
6
6
5
5
5
5
IRIS-A6351
MOSFET
RDS(ON)
Pout(W)
VDSS(V)
MAX
Note 1
23015%
10
85 to 264
8
Type
ACinput(V)
IRIS-A6351
650
3.95
Key Specifications
Data Sheet No. PD 96936A
Note 1: The Pout(W) represents the thermal rating at PRC Operation, and the
peak power output is obtained by approximately 120 to 150% of the above
listed. When the output voltage is low and ON-duty is narrow, the Pout(W)
shall become lower than that of above.
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*1 Refer to MOS FET A.S.O curve
*2 MOS FET Tch-EAS curve
*3 Refer to MOS FET Ta-PD1 curve
*4 Refer to TF-PD2 curve for Control IC (See page 5)
*5 Maximum switching current. The maximum switching current is the Drain current determined by the drive
voltage of the IC and threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop
occurs between Pin 1and Pin 2 due to patterning, the maximum switching current decreases as shown by
V
1-2
in Fig.1 Accordingly please use this device within the decrease value, referring to the derating
curve of the maximum switching current.
*6 When embedding this hybrid IC onto the printed circuit board (board size 15mm15mm)
Absolute Maximum Ratings (Ta=25
) (Refer Gnd 2 and 5)
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are
absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions.
IRIS-A6351
Symbol
Definition
Terminals Max. Ratings
Units
Note
I
Dpeak
Drain Current *1
8
2.36
A
Single Pulse
V
1-2
=0.82V
Ta=-20~+125
Single Pulse
V
DD
=99V,L=20mH
I
L
=2.36A
Vin
Input voltage for control part
3-2
35
V
Vth
O.C.P/F.B Pin voltage
4-2
6
V
P
D1
Power dissipation for MOSFET *3
8-1
1.35
W
*6
Power dissipation for control part
(Control IC) *4
Internal frame temperature
Refer to recommended
in operation
operating temperature
Top
Operating ambient temperature
-
-20 ~ +125
Tstg
Storage temperature
-
-40 ~ +125
Tch
Channel temperature
-
150
A
Single pulse avalanche energy *2
8-1
E
AS
56
mJ
Maximum switching current *5
8
I
DMAX
2.36
Specified by
VinIin
-
T
F
-20 ~ +125
3-2
P
D2
0.14
W
V
1-2
Fig.1
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Electrical Characteristics (for Control IC)
Electrical characteristics for control part (Ta=25, Vin=20V,unless otherwise specified)
MIN
TYP
MAX
V
in(ON)
Operation start voltage
15.8
17.6
19.4
V
Vin=019.4V
V
in(OFF)
Operation stop voltage *7
9.1
10.1
11.1
V
Vin=19.49.1V
I
in(ON)
Circuit current in operation
-
-
5
mA
-
I
in(OFF)
Circuit current in non-operation
-
-
50
A
Vin=15V
T
OFF(MAX)
Maximum OFF time
12
15
18
sec
-
Vth
O.C.P/F.B Pin threshold voltage
0.7
0.76
0.82
V
-
I
OCP/FB
O.C.P/F.B Pin extraction current
0.7
0.8
0.9
mA
-
V
in(OVP)
O.V.P operation voltage
23.2
25.5
27.8
V
Vin=027.8V
Vin=27.8
(Vin(OFF)-0.3)V
V
in(La.OFF)
Latch circuit release voltage *7,8
7.9
-
10.5
V
Vin=27.87.9V
Tj
(TSD)
Thermal shutdown operating temperature
135
-
-
-
Ratings
Units
Test
Conditions
I
in(H)
-
-
70
A
Latch circuit sustaining current *8
Definition
Symbol
Electrical Characteristics (for MOSFET)
*7 The relation of V
in(OFF)
V
in(La.OFF)
is applied for each product.
*8 The latch circuit means a circuit operated O.V.P and T.S.D.
(Ta=25) unless otherwise specified
MIN
TYP
MAX
ID=300A
V
2- 1
=0V(short)
V
DS
=650V
V
2- 1
=0V(short)
V
3- 2
=10V
I
D
=0.4A
tf
Switching time
-
-
250
nsec
-
Between channel and
internal frame
300
-
52
/W
-
ch-F
-
-
Thermal resistance *9
Symbol
A
On-resistance
R
DS(ON)
-
-
3.95
Drain leakage current
I
DSS
V
DSS
650
-
-
Ratings
Units
Test Conditions
Drain-to-Source breakdown voltage
V
Definition
*9 Internal frame temperature (T
F
) is measured at the root of the Pin 5.
IRIS-A6351
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IRIS-A6351
MOSFET A.S.O. Curve
0.01
0.1
1
10
100
1
10
100
1000
Drain-to-Source Voltage VDS[V]
D
r
ai
n Cur
r
e
nt
I
D
[A
]
IRIS-A6351
0.1ms
1ms
Drain current
limit by ON
resistance
ASO temperature derating
shall be made by obtaining
ASO Coefficient from the left
curve in your use.
IRIS-A6351
A.S.O. temperature derating coefficient curve
0
20
40
60
80
100
0
20
40
60
80
100
120
Internal frame temperature TF [ ]
A
.
S
.
O
.
t
e
m
p
er
at
ur
e
d
er
a
t
i
n
g
c
oef
f
ic
i
e
n
t
[
%
]
IRIS-A6351
Maximum Switching current derating curve
Ta=20+125
0
1
2
3
0.8
0.9
1
1.1
1.2
V
1-2
[V]
Max
i
m
u
m
S
w
i
tc
hng
Cur
r
e
n
t
I
D
MA
X
[
A
]
IRIS-A6351
Avalanche energy derating curve
0
20
40
60
80
100
25
50
75
100
125
150
Channel temperature Tch [
]
E
AS
t
e
m
p
er
a
t
u
r
e
d
er
at
in
g
c
oef
f
i
ci
en
t
[
%
]
Ta=25C
Single Pulse
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IRIS-A6351
Transient thermal resistance curve
0.01
0.1
1
10
time t [sec]
T
r
an
si
e
n
t
t
h
e
r
m
a
l
re
si
st
an
ce
ch
-
a
[
/W
]
IRIS-A6351
T
F
-P
D2
Curve for Control IC
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0
20
40
60
80
100
120
140
Internal frame temperature TF[]
Po
w
e
r d
i
s
s
i
pa
ti
on
PD
2[
W
]
IRIS-A6351
MOSFET Ta-PD1 Curve
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
20
40
60
80
100 120 140 160
Ambient temperature Ta[]
Po
w
e
r d
i
s
s
i
pa
ti
on
PD1[
W
]
IRIS-A6351
P
D1
=1.35[W]
P
D2
=0.14[W]
1
10 100
1m
10m
100m
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