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IRIS-G5624A
Features
Oscillator is provided on the monolithic control with adopting On-Chip-
Trimming technology.
Small temperature characteristics variation by adopting a comparator to
compensate for temperature on the control part.
Low start-up circuit current (100uA max)
Built-in Active Low-Pass Filter for stabilizing the operation in case of light
load
Avalanche energy guaranteed MOSFET with high VDSS
The built-in power MOSFET simplifies the surge absorption circuit since the
MOSFET guarantees the avalanche energy.
No VDSS de-rating is required.
Built-in constant voltage drive circuit
Built-in step drive circuit
Built-in low frequency PRC mode (20kHz)
Various kinds of protection functions
Pulse-by-pulse Overcurrent Protection (OCP)
Overvoltage Protection with latch mode (OVP)
Thermal Shutdown with latch mode (TSD)
INTEGRATED SWITCHER
Package Outline
TO-220 Fullpack (5 Lead)
Descriptions
IRIS-G5624A is a hybrid IC consists from power MOSFET and a controller IC, designed for Indirect feed-back Quasi-
Resonant (including low frequency PRC) fly-back converter type SMPS (Switching Mode Power Supply) applications
.
This IC realizes high efficiency, low noise, downsizing and standardizing of a power supply system reducing external
components count and simplifying the circuit designs.
(Note). PRC is abbreviation of "Pulse Ratio Control" (On-width control with fixed OFF-time).
Typical Connection Diagram
V
V
V
Vi
i
i
in
n
n
n
D
D
D
D
S
S
S
S
G
G
G
GN
N
N
ND
D
D
D
O
O
O
OC
C
C
CP
P
P
P/
/
/
/F
F
F
FB
B
B
B
I
I
I
IR
R
R
RI
I
I
IS
S
S
S-
-
-
-G
G
G
G5
5
5
56
6
6
60
0
0
00
0
0
0
Type
MOSFET
VDSS(V)
RDS(ON)
MAX
AC input(V)
Pout(W)
Note 1
10015%
90
12015%
120
IRIS-G5624A
450
1.0
Key Specifications
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*1 Refer to MOS FET A.S.O curve
*2 MOS FET Tch-EAS curve
*3 Refer to MOS FET Ta-PD1 curve
*4 Refer to TF-PD2 curve for Control IC (See page 5)
*5 Maximum switching current.
The maximum switching current is the Drain current determined by the drive voltage of the IC and
threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 2 and
Pin 3 due to patterning, the maximum switching current decreases as shown by V
2-3
in Fig.1
Accordingly please use this device within the decrease value, referring to the derating
curve of the maximum switching current.
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are
absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions.
Symbol
Definition
Terminals Max. Ratings
Units
Note
I
Dpeak
Drain Current *1
1-2
14.4
A
Single Pulse
V
2-3
=0.78V
Ta=-20~+125
V
DD=99V, L=20mH
I
L peak
=4.4A
Vin
Input voltage for control part
4-3
35
V
Vth
O.C.P/F.B Pin voltage
5-3
6
V
26
W
With infintite heatsink
1.5
W
Without heatsink
Power dissipation for control part
(Control IC) *4
Internal frame temperature
Refer to recommended
in operation
operating temperature
Top
Operating ambient temperature
-
-20 ~ +125
Tstg
Storage temperature
-
-40 ~ +125
Tch
Channel temperature
-
150
Single Pulse
P
D1
Power dissipation for MOSFET *3
1-2
A
Single pulse avalanche energy *2
1-2
E
AS
248
mJ
Maximum switching current *5
1-2
I
DMAX
14.4
Specified by
VinIin
-
T
F
-20 ~ +125
4-3
P
D2
0.8
W
V
2-3
Fig.1
IRIS-G5624A
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Electrical Characteristics (for Control IC)
Electrical characteristics for control part (Ta=25, Vin=18V,unless otherwise specified)
MIN
TYP
MAX
V
in(ON)
Operation start voltage
14.4
16
17.6
V
Vin=017.6V
V
in(OFF)
Operation stop voltage
9
10
11
V
Vin=17.69V
I
in(ON)
Circuit current in operation
-
-
20
mA
-
I
in(OFF)
Circuit current in non-operation
-
-
100
A
Vin=14V
T
OFF(MAX)
Maximum OFF time
45
-
55
sec
-
Tth(2)
Minimum time for input of quasi
resonant signals *6
-
-
1
sec
-
T
OFF(MIN)
Minimum OFF time *7
-
-
2
sec
-
Vth(1)
O.C.P/F.B Pin threshold voltage 1
0.68
0.73
0.78
V
-
Vth(2)
O.C.P/F.B Pin threshold voltage 2
1.3
1.45
1.6
V
I
OCP/FB
O.C.P/F.B Pin extraction current
1.2
1.35
1.5
mA
-
V
in(OVP)
O.V.P operation voltage
34
36.5
39
V
Vin=039.0V
I
in(H)
V
in(La.OFF)
Latch circuit release voltage *8
6.6
-
8.4
V
Vin=39.06.6V
Tj
(TSD)
Thermal shutdown operating temperature
140
-
-
-
V
in(SENSE)
Detected Voltage
31.7
32
32.3
V
Vin=31.732.3V
-
Temperature coefficient of detected voltage
-
2.5
-
mV/
Vin=31.732.3V
Latch circuit sustaining current *8
Definition
Symbol
Vin=39.08.5V
Ratings
Units
Test
Conditions
-
-
400
A
Electrical Characteristics (for MOSFET)
*6 Recommended operating conditions
Time for iunput of quasi resonant signals
For the quasi resonant signal inputted to OCP/FB Pin
at the time of quasi resonant operation, the signal shall
be wider thant Tth(2).
*7 The minimum OFF time means T
OFF
width at the time when the minimum quasi resonant signal is inputted.
*8 The latch circuit means a circuit operated O.V.P and T.S.D.
(Ta=25) unless otherwise specified
MIN
TYP
MAX
ID=300A
V3
- 2
=0V(short)
V
DS
=450V
V3-2=0V(short)
V3-2=10V
I
D
=1.8A
tf
Switching time
-
-
250
nsec
-
Between channel and
internal frame
300
-
2
/W
-
ch-F
-
-
Thermal resistance
Symbol
A
On-resistance
R
DS(ON)
-
-
1
Drain leakage current
I
DSS
V
DSS
450
-
-
Ratings
Units
Test Conditions
Drain-to-Source breakdown voltage
V
Definition
IRIS-G5624A
Vth(2)
O.C.P/F.B
Tth(2)1.0sec
0V
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IRIS-G5624A
MOSFETA.S.O. Curve
0.01
0.1
1
10
100
1
10
100
1000
D rain-to-Source V oltage V
D S
[V ]
Drain Current I
D
[A]
0.1ms
1ms
Drain current
limit by ON
resistance
ASO temperature derating
shall be made by obtaining
ASO Coefficient from the left
curve in your use.
IRIS-G5624A
IRIS-G5624A
A.S.O. temperature derating coefficient curve
0
20
40
60
80
100
0
20
40
60
80
100
120
Internal frame temperature TF []
A.
S.
O.
temp
eratu
r
e d
e
ratin
g
co
efficien
t[%
]
IRIS-G5624A
Maximum Switching current derating curve
T a=20+125
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
0.70
0.80
0.90
1.00
1.10
1.20
V
2-3
[V]
Maximum Switchng Current I
DMAX
[A]
IRIS-G 5624A
A valanche energy derating curve
0
20
40
60
80
100
25
50
75
100
125
150
Channel temperature T ch [ ]
E
AS
t
e
m
p
erat
u
r
e d
e
rat
i
n
g
co
effi
ci
en
t
[%]
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IRIS-G5624A
Transient thermal resistance curve
0.001
0.01
0.1
1
10
tim e
t [sec]
Tr
an
s
i
en
t th
er
mal r
e
s
i
s
t
an
ce
ch
-
c
[
/W
]
IRIS-G5624A
MIC T
F
-P
D2
Curve
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0
20
40
60
80
100
120
140
160
Internal frame temperature T
F
[]
Power
dis
s
i
pation P
D2
[W
]
IRIS-G5624A
MOSFET Ta-P
D1
Curve
0
5
10
15
20
25
30
0
20
40
60
80
100
120
140
160
Ambient temperature Ta[]
Pow
e
r
dis
s
i
pation P
D1
[W]
1
10 100
1m
10m
100m
P
D2
=0.8[W]
P
D1
=26[W]
With infinite
heatsink
Without
heatsink
P
D1
=1.5[W]
IRIS-G5624A
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