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IRIS-G6651
Features
Oscillator is provided on the monolithic control with adopting On-Chip-
Trimming technology.
Small temperature characteristics variation by adopting a comparator to
compensate for temperature on the control part.
Low start-up circuit current (100uA max)
Built-in Active Low-Pass Filter for stabilizing the operation in case of light
load
Avalanche energy guaranteed MOSFET with high VDSS
The built-in power MOSFET simplifies the surge absorption circuit
since the MOSFET guarantees the avalanche energy.
No VDSS de-rating is required.
Built-in constant voltage drive circuit
Built-in soft drive circuit
Built-in low frequency PRC mode (20kHz)
Various kinds of protection functions
Pulse-by-pulse Overcurrent Protection (OCP)
Overvoltage Protection with latch mode (OVP)
Thermal Shutdown with latch mode (TSD)
INTEGRATED SWITCHER
Package Outline
TO-220 Fullpack (5 Lead)
Descriptions
IRIS-G6651 is a hybrid IC consists from power MOSFET and a controller IC, designed for Quasi-Resonant
(including low frequency PRC) fly-back converter type SMPS (Switching Mode Power Supply) applications.
This IC realizes high efficiency, low noise, downsizing and standardizing of a power supply system reducing
external components count and simplifying the circuit designs.
(Note). PRC is abbreviation of "Pulse Ratio Control" (On-width control with fixed OFF-time).
Typical Connection Diagram
Type
MOSFET
VDSS(V)
RDS(ON)
MAX
AC input(V)
Pout(W)
Note 1
23015%
66
85 to 264
30
IRIS-G6651
650
3.9
Key Specifications
Data Sheet No. PD 96949A
V
V
V
Vi
i
i
in
n
n
n
I
I
I
IR
R
R
RI
I
I
IS
S
S
S-
-
-
-G
G
G
G6
6
6
66
6
6
60
0
0
00
0
0
0
D
D
D
D
S
S
S
S
G
G
G
GN
N
N
ND
D
D
D
O
O
O
OC
C
C
CP
P
P
P/
/
/
/F
F
F
FB
B
B
B
Note 1: The Pout (W) represents the thermal rating at Quasi-Resonant
Operation, and the peak power output is obtained by approximately 120 to
140% of the above listed. When the output voltage is low and ON-duty is
narrow, the Pout (W) shall become lower than that of above.
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Absolute Maximum Ratings (Ta=25C)
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are
absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions.
Symbol
Definition
Terminals Max. Ratings
Units
Note
I
Dpeak
Drain Current *1
1-2
2.7
A
Single Pulse
V
2-3
=0.78V
Ta=-20~+125
V
DD=99V, L=20mH
I
L peak
=2.8A
Vin
Input voltage for control part
4-3
35
V
Vth
O.C.P/F.B Pin voltage
5-3
6
V
24
W
With infintite heatsink
1.5
W
Without heatsink
Power dissipation for control part
(Control IC) *4
Internal frame temperature
Refer to recommended
in operation
operating temperature
Top
Operating ambient temperature
-
-20 ~ +125
Tstg
Storage temperature
-
-40 ~ +125
Tch
Channel temperature
-
150
Single Pulse
P
D1
Power dissipation for MOSFET *3
1-2
A
Single pulse avalanche energy *2
1-2
E
AS
92
mJ
Maximum switching current *5
1-2
I
DMAX
2.7
Specified by
VinIin
-
T
F
-20 ~ +125
4-3
P
D2
0.8
W
V
2-3
Fig.1
IRIS-G6651
*1 Refer to MOS FET A.S.O curve
*2 MOS FET Tch-EAS curve
*3 Refer to MOS FET Ta-PD1 curve
*4 Refer to TF-PD2 curve for Control IC (See page 5)
*5 Maximum switching current.
The maximum switching current is the Drain current determined by the drive voltage of the IC and
threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 2 and
Pin 3 due to patterning, the maximum switching current decreases as shown by V
2-3
in Fig.1
Accordingly please use this device within the decrease value, referring to the derating
curve of the maximum switching current.
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Electrical Characteristics (for Control IC)
Electrical characteristics for control part (Ta=25, Vin=18V,unless otherwise specified)
MIN
TYP
MAX
V
in(ON)
Operation start voltage
14.4
16
17.6
V
Vin=017.6V
V
in(OFF)
Operation stop voltage
9
10
11
V
Vin=17.69V
I
in(ON)
Circuit current in operation
-
-
30
mA
-
I
in(OFF)
Circuit current in non-operation
-
-
100
A
Vin=14V
T
OFF(MAX)
Maximum OFF time
45
-
55
sec
-
Tth(2)
Minimum time for input of quasi
resonant signals *6
-
-
1
sec
-
T
OFF(MIN)
Minimum OFF time *7
-
-
1.5
sec
-
Vth(1)
O.C.P/F.B Pin threshold voltage 1
0.68
0.73
0.78
V
-
Vth(2)
O.C.P/F.B Pin threshold voltage 2
1.3
1.45
1.6
V
I
OCP/FB
O.C.P/F.B Pin extraction current
1.2
1.35
1.5
mA
-
V
in(OVP)
O.V.P operation voltage
20.5
22.5
24.5
V
Vin=024.5V
I
in(H)
V
in(La.OFF)
Latch circuit release voltage *8
6.6
-
8.4
V
Vin=24.56.6V
Tj
(TSD)
Thermal shutdown operating temperature
140
-
-
-
A
Latch circuit sustaining current *8
Definition
Symbol
Vin=24.58.5V
Ratings
Units
Test
Conditions
-
-
400
Electrical Characteristics (for MOSFET)
(Ta=25) unless otherwise specified
MIN
TYP
MAX
ID=300A
V3
- 2
=0V(short)
V
DS
=650V
V3-2=0V(short)
V3-2=10V
I
D
=0.9A
tf
Switching time
-
-
250
nsec
-
Between channel and
internal frame
300
-
2.4
/W
-
ch-F
-
-
Thermal resistance
Symbol
A
On-resistance
R
DS(ON)
-
-
3.9
Drain leakage current
I
DSS
V
DSS
650
-
-
Ratings
Units
Test Conditions
Drain-to-Source breakdown voltage
V
Definition
IRIS-G6651
*6 Recommended operating conditions
Time for input of quasi resonant signals
For the quasi resonant signal inputted to OCP/FB Pin
at the time of quasi resonant operation, the signal shall
be wider than Tth(2).
*7 The minimum OFF time means T
OFF
width at the time when the minimum quasi resonant signal is inputted.
*8 The latch circuit means a circuit operated O.V.P and T.S.D.
Vth(2)
O.C.P/F.B
Tth(2)1.0sec
0V
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IRIS-G6651
MOSFETA.S.O. Curve
0.01
0.1
1
10
100
1
10
100
1000
Drain-to-Source Voltage V
DS
[V]
D
0.1ms
1ms
Drain current
limit by ON
resistance
ASO temperature derating
shall be made by obtaining
ASO Coefficient from the left
curve in your use.
IRIS-G6651
IRIS-G6651
A.S.O. temperature derating coefficient curve
0
20
40
60
80
100
0
20
40
60
80
100
120
Internal frame temperature TF []
A.
S.
O.
temperature derating coefficient[%]
IRIS-G6651
Maximum Switching current derating curve
Ta=20+125
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.7
0.8
0.9
1.0
1.1
1.2
V
2-3
[V]
M
a
ximum Switchng C
u
r
r
e
nt I
DM
AX
[A
]
IRIS-G6651
Avalanche energy derating curve
0
20
40
60
80
100
25
50
75
100
125
150
Channel temperature Tch []
E
AS
t
e
m
p
er
at
ur
e der
a
t
i
ng coef
f
i
ci
ent
[
%
]
D
r
a
i
n
C
u
rr
en
t
I
D
[A
]
Ta=25
Single Pulse
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IRIS-G6651
Transient thermal resistance curve
0.001
0.01
0.1
1
10
tim e
t [sec]
Trans
i
ent thermal res
i
s
t
ance
ch-c[
/W]
IRIS-G6651
MIC T
F
-P
D2
Curve
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0
20
40
60
80
100 120
140
160
Internal frame temperature T
F
[]
Power di
ssi
pat
i
on P
D2
[W]
IRIS-G6651
MOSFET Ta-P
D1
Curve
0
5
10
15
20
25
30
0
20
40
60
80
100
120
140
160
Ambient temperature Ta[]
Powe
r dissipa
tion P
D1
[W]
1
10 100
1m
10m
100m
P
D2
=0.8[W]
P
D1
=24[W]
With infinite
heatsink
Without
heatsink
P
D1
=1.5[W]
IRIS-G6651
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