Parameters
IRK.26
Units
I
T(AV)
or I
F(AV)
@ 85C
I
O(RMS)
(*)
60
A
I
TSM
@ 50Hz
400
A
I
FSM
@ 60Hz
420
A
I
2
t
@ 50Hz
800
A
2
s
@ 60Hz
730
A
2
s
I
2
t
8000
A
2
s
V
RRM
range
400 to 1600
V
T
STG
- 40 to 125
o
C
T
J
- 40 to125
o
C
(*) As AC switch.
27
A
Major Ratings and Characteristics
27 A
ADD-A-pak
TM
GEN V Power Modules
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
IRK.26 SERIES
Bulletin I27130 rev. G 10/02
1
www.irf.com
Features
High Voltage
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
UL E78996 approved
3500V
RMS
isolating voltage
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage of
Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a solid
Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
The Generation V of AAP module is manufactured without
hard mold, eliminating in this way any possible direct
stress on the leads.
Benefits
Up to 1600V
Full compatible TO-240AA
High Surge capability
Easy Mounting on heatsink
Al
2
0
3
DBC insulator
Heatsink grounded
Electrical Description
These modules are intended for general purpose
high voltage applications such as high voltage regu-
lated power supplies, lighting circuits, temperature
and motor speed control circuits, UPS and battery
charger.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop feature
already tested and proved as reliable on other IR modules.
IRK.26 Series
2
Bulletin I27130 rev. G 10/02
www.irf.com
V
RRM
, maximum
V
RSM
, maximum
V
DRM
, max. repetitive
I
RRM
Voltage
repetitive
non-repetitive
peak off-state voltage,
I
DRM
Code
peak reverse voltage peak reverse voltage
gate open circuit
125C
-
V
V
V
mA
04
400
500
400
06
600
700
600
08
800
900
800
IRK.26
10
1000
1100
1000
15
12
1200
1300
1200
14
1400
1500
1400
16
1600
1700
1600
I
T(AV)
Max. average on-state
current (Thyristors)
27
180
o
conduction, half sine wave,
I
F(AV)
Max. average forward
27
T
C
= 85
o
C
current (Diodes)
I
O(RMS
)
Max. continuous RMS
on-state current.
As AC switch
I
TSM
Max. peak, one cycle
400
t=10ms
No voltage
or
non-repetitive on-state
420
t=8.3ms reapplied
I
FSM
or forward current
335
t=10ms
100% V
RRM
350
t=8.3ms reapplied
470
t=10ms
T
J
= 25
o
C,
490
t=8.3ms no voltage reapplied
I
2
t
Max. I
2
t for fusing
800
t=10ms
No voltage
730
t=8.3ms reapplied
560
t=10ms
100% V
RRM
510
t=8.3ms reapplied
1100
t=10ms
T
J
= 25
o
C,
1000
t=8.3ms no voltage reapplied
I
2
t
Max. I
2
t for fusing (1)
8000
A
2
s
t= 0.1 to 10ms, no voltage reappl. T
J
=T
J
max
V
T(TO)
Max. value of threshold
0.92
Low level (3)
voltage (2)
0.95
High level (4)
r
t
Max. value of on-state
12.11
Low level (3)
slope resistance (2)
11.82
High level (4)
V
TM
Max. peak on-state or
I
TM
=
x I
T(AV)
T
J
= 25
o
C
V
FM
forward voltage
I
FM
=
x I
F(AV)
di/dt
Max. non-repetitive rate
T
J
= 25
o
C, from 0.67 V
DRM
,
of rise of turned on
150
A/s
I
TM
=
x I
T(AV)
,
I
g
= 500mA,
current
t
r
< 0.5 s, t
p
> 6 s
I
H
Max. holding current
200
T
J
= 25
o
C, anode supply = 6V,
resistive load, gate open circuit
I
L
Max. latching current
400
T
J
= 25
o
C, anode supply = 6V, resistive load
T
J
= T
J
max
T
J
= T
J
max
Parameters
IRK.26
Units
Conditions
60
(1) I
2
t for time t
x
=
I
2
t
x
t
x
(2) Average power
=
V
T(TO)
x
I
T(AV)
+
r
t
x
(I
T(RMS)
)
2
(3) 16.7%
x
x I
AV
< I <
x I
AV
(4)
I >
x I
AV
On-state Conduction
Initial T
J
= T
J
max.
A
A
2
s
V
m
1.95
V
mA
or
I
(RMS)
I
(RMS)
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Sinusoidal
half wave,
Initial T
J
= T
J
max.
IRK.26 Series
3
Bulletin I27130 rev. G 10/02
www.irf.com
T
J
Junction operating
temperature range
T
stg
Storage temp. range
- 40 to 125
R
thJC
Max. internal thermal
resistance, junction
0.31
Per module, DC operation
to case
R
thCS
Typical thermal resistance
case to heatsink
T
Mounting torque 10%
to heatsink
busbar
3
wt
Approximate weight
110 (4)
gr (oz)
Case style
TO-240AA
JEDEC
Thermal and Mechanical Specifications
Parameters
IRK.26
Units
Conditions
- 40 to 125
0.1
5
(5) Available with dv/dt = 1000V/
s, to complete code add S90 i.e. IRKT26/16AS90.
C
K/W
Nm
Mounting surface flat, smooth and greased
I
RRM
Max. peak reverse and
I
DRM
off-state leakage current
15
mA
T
J
= 125
o
C, gate open circuit
at V
RRM
, V
DRM
V
INS
RMS isolation voltage
2500 (1 min)
V
50 Hz, circuit to base, all terminals
3500 (1 sec)
shorted
dv/dt Max. critical rate of rise
500
V/
s
T
J
= 125
o
C, linear to 0.67 V
DRM
,
Triggering
Blocking
P
GM
Max. peak gate power
10
P
G(AV)
Max. average gate power
2.5
I
GM
Max. peak gate current
2.5
A
-V
GM
Max. peak negative
gate voltage
4.0
T
J
= - 40C
2.5
T
J
= 25C
1.7
T
J
= 125C
270
T
J
= - 40C
150
mA
T
J
= 25C
80
T
J
= 125C
V
GD
Max. gate voltage
that will not trigger
I
GD
Max. gate current
that will not trigger
0.25
V
6
mA
Anode supply = 6V
resistive load
V
GT
Max. gate voltage
required to trigger
Anode supply = 6V
resistive load
I
GT
Max. gate current
required to trigger
W
V
10
T
J
= 125
o
C,
rated V
DRM
applied
T
J
= 125
o
C,
rated V
DRM
applied
Parameters
IRK. 26
Units
Conditions
Parameters
IRK. 26
Units
Conditions
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the
spread of the compound
Sine half wave conduction
Rect. wave conduction
Devices
Units
180
o
120
o
90
o
60
o
30
o
180
o
120
o
90
o
60
o
30
o
IRK.26
0.23
0.27
0.34
0.48
0.73
0.17
0.28
0.36
0.49
0.73
C/W
R Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
IRK.26 Series
4
Bulletin I27130 rev. G 10/02
www.irf.com
IRK
T
26
/
16
A S90
Device Code
1
2
3
4
5
Ordering Information Table
6
* * Available with no auxiliary cathode.
To specify change:
26 to 27
e.g. : IRKT27/16A etc.
IRK.27 types
With no auxiliary cathode
Outline Table
+
K2 G2
-
K1
G1
~
(1)
(2)
(3)
(4) (5)
(7) (6)
+
-
K1
G1
~
(1)
(2)
(3)
(4) (5)
+
-
~
(1)
(2)
(3)
K2
(7)
G2
(6)
Dimensions are in millimeters and [inches]
IRKT
IRKH
IRKL
NOTE: To order the Optional Hardware see Bulletin I27900
1
-
Module type
2
-
Circuit configuration (See Circuit Configuration table below)
3
-
Current code * *
4
-
Voltage code (See Voltage Ratings table)
5
-
A : Gen V
6
-
dv/dt code:
S90 = dv/dt 1000 V/s
No letter = dv/dt 500 Vs
IRKN
+
-
K1
G1
+
(1)
(2)
(3)
(4) (5)
IRK.26 Series
5
Bulletin I27130 rev. G 10/02
www.irf.com
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
80
90
100
110
120
130
0
5
10
15
20
25
30
Ma
x
i
mu
m A
l
l
o
w
a
b
l
e C
a
s
e
T
e
m
p
e
r
at
u
r
e (
C
)
30 60
90 120
180
Average On-state Current (A)
Conduction Angle
IRK.26.. Series
R (DC) = 0.62 K/W
thJC
80
90
100
110
120
130
0
10
20
30
40
50
DC
30
60
90
120
180
Average On-state Current (A)
Ma
x
i
mu
m A
l
l
o
w
a
b
l
e
C
a
s
e
T
e
mp
er
a
t
u
r
e
(
C
)
Conduction Period
IRK.26.. Series
R (DC) = 0.62 K/W
thJC
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
0
10
20
30
40
50
0
5
10
15
20
25
30
180
120
90
60
30
RMS Limit
Conduction Angle
M
a
xi
m
u
m
A
v
e
r
ag
e
O
n
-
s
ta
te
P
o
w
e
r
L
o
ss
(
W
)
Average On-state Current (A)
IRK.26.. Series
Per Junction
T = 125C
J
0
10
20
30
40
50
60
70
0
10
20
30
40
50
DC
180
120
90
60
30
RMS Limit
Conduction Period
M
a
x
i
m
u
m
A
v
era
g
e
On
-st
a
t
e
P
o
w
e
r L
o
ss (W
)
Average On-state Current (A)
IRK.26.. Series
Per Junction
T = 125C
J
150
200
250
300
350
400
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
P
e
ak
H
a
l
f
S
i
n
e
W
a
v
e
O
n
-
s
tate
C
u
r
r
e
n
t
(
A
)
Initial T = 125C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
IRK.26.. Series
Per Junction
150
200
250
300
350
400
0.01
0.1
1
Pulse Train Duration (s)
Versus Pulse Train Duration. Control
P
e
ak
Ha
l
f
S
i
n
e
W
a
v
e
O
n
-s
t
a
t
e
Cu
r
r
e
n
t
(A
)
Initial T = 125C
No Voltage Reapplied
Rated V Reapplied
RRM
J
Maximum Non Repetitive Surge Current
Of Conduction May Not Be Maintained.
IRK.26.. Series
Per Junction
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