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75 A
95 A
ADD-A-pak
TM
GEN V Power Modules
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
IRK.71, .91 SERIES
Bulletin I27132 rev. H 10/02
1
www.irf.com
Parameters
IRK.71
IRK.91
Units
I
T(AV)
or I
F(AV)
@ 85C
I
O(RMS)
(*)
165
210
A
I
TSM
@ 50Hz
1665
1785
A
I
FSM
@ 60Hz
1740
1870
A
I
2
t
@ 50Hz
13.86
15.91
KA
2
s
@ 60Hz
12.56
14.52
KA
2
s
I
2
t
138.6
159.1
KA
2
s
V
RRM
range
400 to 1600
V
T
STG
- 40 to 125
o
C
T
J
- 40 to125
o
C
(*) As AC switch.
75
95
A
Major Ratings and Characteristics
Features
High Voltage
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
UL E78996 approved
3500V
RMS
isolating voltage
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage
of Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a
solid Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
Benefits
Up to 1600V
Full compatible TO-240AA
High Surge capability
Easy Mounting on heatsink
Al
2
0
3
DBC insulator
Heatsink grounded
Electrical Description
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
IRK.71, .91 Series
2
Bulletin I27132 rev. H 10/02
www.irf.com
On-state Conduction
I
T(AV)
Max. average on-state
current (Thyristors)
180
o
conduction, half sine wave,
I
F(AV)
Max. average forward
T
C
= 85
o
C
current (Diodes)
I
O(RMS
)
Max. continuous RMS
on-state current.
165
210
As AC switch
I
TSM
Max. peak, one cycle
1665
1785
t=10ms No voltage
or
non-repetitive on-state
1740
1870
t=8.3ms reapplied
I
FSM
or forward current
1400
1500
t=10ms 100% V
RRM
1470
1570
t=8.3ms reapplied
1850
2000
t=10ms T
J
= 25
o
C,
1940
2100
t=8.3ms no voltage reapplied
I
2
t
Max. I
2
t for fusing
13.86
15.91
t=10ms No voltage
12.56
14.52
t=8.3ms reapplied
9.80
11.25
t=10ms 100% V
RRM
8.96
10.27
t=8.3ms reapplied
17.11
20.00
t=10ms T
J
= 25
o
C,
15.60
18.30
t= 8.3ms no voltage reapplied
I
2
t
Max. I
2
t for fusing (1)
138.6
159.1
KA
2
s
t=0.1 to 10ms, no voltage reapplied
V
T(TO)
Max. value of threshold
0.82
0.80
Low level (3)
voltage (2)
0.85
0.85
High level (4)
r
t
Max. value of on-state
3.00
2.40
Low level
(3)
slope resistance (2)
2.90
2.25
High level (4)
V
TM
Max. peak on-state or
I
TM
=
x I
T(AV)
V
FM
forward voltage
I
FM
=
x I
F(AV)
di/dt
Max. non-repetitive rate
T
J
= 25
o
C, from 0.67 V
DRM
,
of rise of turned on
150
A/s
I
TM
=
x I
T(AV)
,
I
g
= 500mA,
current
t
r
< 0.5 s, t
p
> 6 s
I
H
Max. holding current
200
T
J
= 25
o
C, anode supply = 6V,
resistive load, gate open circuit
I
L
Max. latching current
400
T
J
= 25
o
C, anode supply = 6V, resistive load
Parameters
IRK.71
IRK.91
Units
Conditions
Initial T
J
= T
J
max.
A
KA
2
s
V
m
1.59
1.58
V
mA
or
I
(RMS)
I
(RMS)
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
V
RRM
, maximum
V
RSM
, maximum
V
DRM
, max. repetitive
I
RRM
Voltage
repetitive
non-repetitive
peak off-state voltage,
I
DRM
Code
peak reverse voltage peak reverse voltage
gate open circuit
125C
-
V
V
V
mA
04
400
500
400
06
600
700
600
08
800
900
800
IRK.71/ .91
10
1000
1100
1000
15
12
1200
1300
1200
14
1400
1500
1400
16
1600
1700
1600
Sinusoidal
half wave,
Initial T
J
= T
J
max.
75
95
T
J
= T
J
max
T
J
= T
J
max
T
J
= 25C
(1) I
2
t for time t
x
=
I
2
t
x
t
x
(2) Average power
=
V
T(TO)
x
I
T(AV)
+
r
t
x
(I
T(RMS)
)
2
(3) 16.7%
x
x I
AV
< I <
x I
AV
(4)
I >
x I
AV
IRK.71, .91 Series
3
Bulletin I27132 rev. H 10/02
www.irf.com
I
RRM
Max. peak reverse and
I
DRM
off-state leakage current
at V
RRM
, V
DRM
2500 (1 min)
50 Hz, circuit to base, all terminals
3500 (1 sec)
shorted
dv/dt Max. critical rate of rise
T
J
= 125
o
C, linear to 0.67 V
DRM
,
of off-state voltage (5)
gate open circuit
T
J
Junction operating
temperature range
T
stg
Storage temp. range
- 40 to 125
R
thJC
Max. internal thermal
resistance, junction
0.165
0.135
Per module, DC operation
to case
R
thCS
Typical thermal resistance
case to heatsink
T
Mounting torque 10%
to heatsink
busbar
3
wt
Approximate weight
110 (4)
gr (oz)
Case style
TO-240AA
JEDEC
15
mA
T
J
= 125
o
C, gate open circuit
Thermal and Mechanical Specifications
500
V/
s
Parameters
IRK.71
IRK.91
Units
Conditions
- 40 to 125
0.1
5
Triggering
Blocking
(5) Available with dv/dt = 1000V/
s, to complete code add S90 i.e. IRKT91/16AS90.
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the
spread of the compound
K/W
Nm
Mounting surface flat, smooth and greased
V
INS
RMS isolation voltage
V
P
GM
Max. peak gate power
12
12
P
G(AV)
Max. average gate power
3.0
3.0
I
GM
Max. peak gate current
3.0
3.0
A
-V
GM
Max. peak negative
gate voltage
V
GT
Max. gate voltage
4.0
T
J
= - 40C
required to trigger
2.5
T
J
= 25C
1.7
T
J
= 125C
I
GT
Max. gate current
270
T
J
= - 40C
required to trigger
150
mA
T
J
= 25C
80
T
J
= 125C
V
GD
Max. gate voltage
T
J
= 125
o
C,
that will not trigger
rated V
DRM
applied
I
GD
Max. gate current
T
J
= 125
o
C,
that will not trigger
rated V
DRM
applied
Parameters
IRK.71
IRK.91
Units
Conditions
0.25
V
6
mA
W
V
10
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
C
Parameters
IRK.71
IRK.91
Units
Conditions
Sine half wave conduction
Rect. wave conduction
Devices
Units
180
o
120
o
90
o
60
o
30
o
180
o
120
o
90
o
60
o
30
o
IRK.71
0.06
0.07
0.09
0.12
0.18
0.04
0.08
0.10
0.13
0.18
IRK.91
0.04
0.05
0.06
0.08
0.12
0.03
0.05
0.06
0.08
0.12
C/W
R Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
IRK.71, .91 Series
4
Bulletin I27132 rev. H 10/02
www.irf.com
Outline Table
Dimensions are in millimeters and [inches]
IRK
T
91
/
16
A S90
Device Code
1
2
3
4
5
1
-
Module type
2
-
Circuit configuration (See Circuit Configuration table below)
3
-
Current code * *
4
-
Voltage code (See Voltage Ratings table)
5
-
A : Gen V
6
-
dv/dt code:
S90 = dv/dt 1000 V/s
No letter = dv/dt 500 Vs
Ordering Information Table
6
* * Available with no auxiliary cathode.
To specify change:
71 to 72
91 to 92
e.g. : IRKT92/16A etc.
IRK.92 types
With no auxiliary cathode
NOTE: To order the Optional Hardware see Bulletin I27900
+
K2 G2
-
K1
G1
~
(1)
(2)
(3)
(4) (5)
(7) (6)
+
-
K1
G1
~
(1)
(2)
(3)
(4) (5)
+
-
~
(1)
(2)
(3)
K2
(7)
G2
(6)
IRKT
IRKH
IRKL
IRKN
+
-
K1
G1
+
(1)
(2)
(3)
(4) (5)
IRK.71, .91 Series
5
Bulletin I27132 rev. H 10/02
www.irf.com
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
70
80
90
100
110
120
130
0
10
20
30
40
50
60
70
80
Ma
x
i
mu
m A
l
l
o
w
a
b
l
e
C
a
s
e
T
e
m
p
er
a
t
u
r
e
(
C
)
30
60 90
120
180
Average On-state Current (A)
Conduction Angle
IRK.71.. Series
R (DC) = 0.33 K/W
thJC
70
80
90
100
110
120
130
0
20
40
60
80
100
120
DC
30
60
90
120
180
Average On-state Current (A)
Ma
x
i
m
u
m Al
l
o
wab
l
e
Ca
se T
e
m
p
er
a
t
u
r
e (
C
)
Conduction Period
IRK.71.. Series
R (DC) = 0.33 K/W
thJC
Fig. 3 - On-state Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 4 - On-state Power Loss Characteristics
0
20
40
60
80
100
120
0
10
20
30
40
50
60
70
80
180
120
90
60
30
RMS Limit
Conduction Angle
M
a
x
i
m
u
m Av
er
a
g
e On-s
t
a
t
e
Po
w
e
r
L
o
s
s
(
W
)
Average On-state Current (A)
IRK.71.. Series
Per Junction
T = 125C
J
0
20
40
60
80
100
120
140
0
20
40
60
80
100
120
DC
180
120
90
60
30
RMS Limit
Conduction Period
Ma
x
i
mu
m
A
v
er
ag
e On-s
t
a
t
e
P
o
w
e
r
L
o
s
s
(
W
)
Average On-state Current (A)
IRK.71.. Series
Per Junction
T = 125C
J
700
800
900
1000
1100
1200
1300
1400
1500
1600
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
P
e
a
k
Ha
l
f
S
i
ne
W
a
v
e
O
n
-
s
ta
te
C
u
r
r
e
n
t
(
A
)
Initial T = 125C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
IRK.71.. Series
Per Junction
600
800
1000
1200
1400
1600
1800
0.01
0.1
1
Pe
a
k
H
a
lf
S
i
n
e
W
a
v
e
O
n
-
s
ta
t
e
C
u
r
r
e
n
t (
A
)
Pulse Train Duration (s)
Initial T = 125C
No Voltage Reapplied
Rated V Reapplied
Of Conduction May Not Be Maintained.
RRM
J
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
IRK.71.. Series
Per Junction
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