irkd250p1
I
F(AV)
250
270
320
A
@ T
C
100
100
100
C
I
F(RMS)
393
424
502
A
I
FSM
@ 50Hz
7015
8920
10110
A
@ 60Hz
7345
9430
10580
A
I
2
t
@ 50Hz
246
398
511
KA
2
s
@ 60Hz
225
363
466
KA
2
s
I
2
t
2460
3980
5110
KA
2
s
V
RRM
Up to 2000 Up to 3000 Up to 2000
V
T
J
-40 to 150
o
C
Parameters
IRK.250.. IRK.270.. IRK.320.. Units
Major Ratings and Characteristics
This new IRK series of MAGN-A-paks uses high voltage
power diodes in two basic configurations. The semicon-
ductors are electrically isolated from the metal base ,
allowing common heatsinks and compact assemblies to
be built. They can be interconnected to form single
phase or three phase bridges and the single diode
module can be used in conjunction with the thyristor
modules as a freewheel diode. These modules are
intended for general purpose applications such as
battery chargers, welders and plating equipment and
where high voltage and high current are required (motor
drives, etc.).
Description
Features
High voltage
Electrically isolated base plate
3000 V
RMS
isolating voltage
Industrial standard package
Simplified mechanical designs, rapid assembly
High surge capability
Large creepage distances
UL E78996 approved
STANDARD RECOVERY DIODES
250A
270A
320A
MAGN-A-pak
Power Modules
IRK. SERIES
1
Bulletin I27090 rev. C 05/02
www.irf.com
2
www.irf.com
IRK.250, .270, .320 Series
Bulletin I27090 rev. C 05/02
I
F(AV)
Maximum average forward current
250
270
320
A
180
o
conduction, half sine wave
@ Case temperature
100
100
100
o
C
I
F(RMS)
Maximum RMS forward current
393
424
502
A
as AC switch
I
FSM
Maximum peak, one-cycle forward,
7015
8920
10110
A
t = 10ms No voltage
non-repetitive surge current
7345
9340
10580
t = 8.3ms reapplied
5900
7500
8500
t = 10ms 100% V
RRM
6180
7850
8900
t = 8.3ms reapplied
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
246
398
511
KA
2
s t = 10ms No voltage
Initial T
J
= T
J
max
225
363
466
t = 8.3ms reapplied
174
281
361
t = 10ms 100% V
RRM
159
257
330
t = 8.3ms reapplied
I
2
t
Maximum I
2
t for fusing
2460
3980
5110 KA
2
s t = 0.1 to 10ms, no voltage reapplied
V
F(TO)1
Low level val. of threshold voltage
0.79
0.74
0.69
V
(16.7% x
x I
F(AV)
< I <
x I
FAV)
), T
J
= T
J
max.
V
F(TO)2
High level val. of threshold voltage
0.92
0.87
0.86
V
(I >
x I
F(AV)
), T
J
= T
J
max.
r
t1
Low level forward slope resistance
0.63
0.94
0.59
m
(16.7% x
x I
F(AV)
< I <
x I
F(AV)
) T
J
= T
J
max.
r
t2
High level forward slope resistance
0.49
0.81
0.44
m
(I >
x I
F(AV)
), T
J
= T
J
max.
V
FM
Maximum forward voltage drop
1.29
1.48
1.28
V
I
FM
=
x I
F(AV)
, T
J
= T
J
max., 180
o
conduction
Av. power = V
F(TO)
x I
F(AV)
+ r
f
x (I
F(RMS)
)
2
Parameters
IRK.250 IRK.270 IRK.320
Units Conditions
Forward Conduction
Voltage Ratings
ELECTRICAL SPECIFICATIONS
Type number
Voltage
V
RRM
, Maximum repetitive
V
RSM
, Maximum non-repetitive
I
RRM
Max
Code
peak reverse voltage
peak reverse voltage
@ 150C
V
V
m A
IRK.250-
04
400
500
50
IRK.270-
08
800
900
IRK.320-
12
1200
1300
16
1600
1700
20
2000
2100
IRK.320-
24
2400
2500
50
30
3000
3100
I
RRM
Max. peak reverse leakage
50
mA
T
J
= 150
o
C
current
V
INS
RMS isolation voltage
3000
V
50Hz, circuit to base, all terminals shorted, t =1sec
Blocking
Parameter
IRK.250 /.270 /.320
Units Conditions
3
www.irf.com
IRK.250, .270, .320 Series
Bulletin I27090 rev. C 05/02
Sinusoidal conduction @ T
J
max.
Rectangular conduction @ T
J
max.
Devices
Units
180
o
120
o
90
o
60
o
30
o
180
o
120
o
90
o
60
o
30
o
IRK.250-
0.009
0.010
0.014
0.020
0.032
0.007
0.011
0.015
0.021
0.033
K/W
IRK.270-
0.008
0.012
0.014
0.020
0.032
0.007
0.011
0.015
0.020
0.033
IRK.320-
0.008
0.010
0.013
0.020
0.032
0.007
0.011
0.015
0.020
0.033
R Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
1
2
3
11
- Module type
2
- Circuit configuration
3
- Current rating: I
F(AV)
x 10 rounded
4
- Voltage code: Code x 100 = V
RRM
(see Voltage Rating Table)
Device Code
Ordering Information Table
4
T
J
Max. junction operating
-40 to 150
C
temperature range
T
stg
Max. storage temperature range
-40 to 150
C
R
thJC
Max. thermal resistance,
0.16
0.125
0.125
K/W Per junction, DC operation
junction to case
R
thCS
Max. thermal resistance,
0.035
K/W
case to heatsink
T
Mounting torque 10%
MAP to heatsink
4 to 6
Nm
busbar to MAP
8 to 10
wt
Approximate weight
800 (30)
g (oz)
Parameter
IRK.250 / .270 / .320
Units Conditions
Thermal and Mechanical Specifications
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound
Mounting surface flat, smooth and greased
Per module
IRK D
32020 - 2424
4
www.irf.com
IRK.250, .270, .320 Series
Bulletin I27090 rev. C 05/02
- All dimensions in millimeters (inches)
- Dimensions are nominal
- Full engineering drawings are available on request
- UL identification number for cathode wire: UL 1385
- UL identification number for package: UL 94V0
Outline Table
IRKD...
IRKC...
IRKJ...
IRKE...
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
80
90
100
110
120
130
140
150
0
50
100 150 200 250 300 350 400
D C
30
60
90
120
180
M
a
x
i
mu
m A
l
l
o
wa
b
l
e
C
a
s
e
T
e
m
p
e
r
a
t
u
r
e
(
C
)
C ond uc tio n Perio d
A ve ra g e Forw a rd C urre n t (A)
IRK .250.. Se rie s
R (D C ) = 0.16 K /W
thJC
80
90
100
110
120
130
140
150
0
50
100
150
200
250
300
30
60
90
120
180
M
a
x
i
mu
m A
l
l
o
w
a
b
l
e
C
a
s
e
T
e
mp
e
r
a
t
u
r
e
(
C
)
C ond uctio n Ang le
A ve rag e Forw ard C urre n t (A)
IRK .250.. Se rie s
R (D C ) = 0.16 K /W
thJC
5
www.irf.com
IRK.250, .270, .320 Series
Bulletin I27090 rev. C 05/02
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Forward Power Loss Characteristics
Fig. 6 - Forward Power Loss Characteristics
0
50
100
150
200
250
300
0
50
100
150
200
250
A ve ra g e Fo rw ard C urre n t (A)
R M S Lim it
M
a
x
i
m
u
m
A
v
e
r
a
g
e
F
o
rw
a
r
d
P
o
w
e
r L
o
s
s
(
W
)
C o nd uc tio n Ang le
180
120
90
60
30
IRK .250.. Se rie s
T = 150 C
J
0
50
100
150
200
250
300
350
400
450
0
50
100 150 200 250 300 350 400
D C
180
120
90
60
30
A ve rag e Fo rw a rd C urre n t (A)
RM S Lim it
M
a
x
i
m
u
m
A
v
e
r
a
g
e
F
o
rw
a
r
d
P
o
w
e
r L
o
s
s
(
W
)
C o nd uctio n P erio d
IRK .250.. Se rie s
T = 150 C
J
0
25
50
75
100
125
150
M axim um Allo w ab le Am b ie n t Te m p e rature ( C )
R
=
0
.0
2 K
/W
- D
e
lta
R
th
SA
0.0
8 K
/W
0.2
K/
W
0.25
K/W
0.4 K
/W
0 .1
2 K
/W
0.6 K/W
0
100
200
300
400
500
600
0
50
100
150
200
250
300 350
400
To tal RM S O utput C urre n t (A )
M
a
x
i
m
u
m
T
o
t
a
l
F
o
rw
a
r
d
P
o
w
e
r L
o
ss
(
W
)
180
(Sin e )
D C
IRK .250.. Se rie s
P e r Jun c t io n
T = 150 C
J
0
25
50
75
100
125
150
M a xim u m A llo w a b le A m b ie n t Te m p e ra ture ( C )
0.0
8 K
/W
0.1
K
/W
0.1
6 K
/W
0.25
K/W
0
.0
3
K
/W
0.0
5 K
/W
0.35 K/
W
R
=
0
.0
1
K
/W
-
D
e
lta
R
th
S
A
0
200
400
600
800
1000
1200
0
100
200
300
400
500
To ta l O utpu t C u rren t (A )
M
a
x
i
mu
m
T
o
t
a
l
P
o
w
e
r
L
o
s
s
(
W
)
180
(Sin e )
180
(Re c t)
2 x IRK.25 0.. Series
Sing le Ph ase Brid ge
C o nn ected
T = 150 C
J
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