45 A
60 A
NEW ADD-A-pak
TM
Power Modules
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
IRK.41, .56 SERIES
Bulletin I27131 rev. C 09/97
1
www.irf.com
Parameters
IRK.41
IRK.56
Units
I
T(AV)
or I
F(AV)
@ 85C
I
O(RMS)
(*)
100
135
A
I
TSM
@ 50Hz
850
1310
A
I
FSM
@ 60Hz
890
1370
A
I
2
t
@ 50Hz
3.61
8.50
KA
2
s
@ 60Hz
3.30
7.82
KA
2
s
I
2
t
36.1
85.0
KA
2
s
V
RRM
range
400 to 1600
V
T
STG
- 40 to 125
o
C
T
J
- 40 to125
o
C
(*) As AC switch.
These IRK series of NEW ADD-A-paks use power
diodes and thyristors in a variety of circuit configura-
tions. The semiconductor chips are electrically iso-
lated from the base plate, allowing common heatsinks
and compact assemblies to be built. They can be
interconnected to form single phase or three phase
bridges or AC controllers. These modules are intended
for general purpose high voltage applications such as
high voltage regulated power supplies, lighting
circuits, and temperature and motor speed control
circuits.
45
60
A
Major Ratings and Characteristics
Features
Electrically isolated: DBC base plate
3500 V
RMS
isolating voltage
Standard JEDEC package
Simplified mechanical designs, rapid assembly
Auxiliary cathode terminals for wiring convenience
High surge capability
Wide choice of circuit configurations
Large creepage distances
UL E78996 approved
Description
IRK.41, .56 Series
2
Bulletin I27131 rev. C 09/97
www.irf.com
I
T(AV)
Max. average on-state
current (Thyristors)
45
60
180
o
conduction, half sine wave,
I
F(AV)
Maximum average
45
60
T
C
= 85
o
C
forward current (Diodes)
I
O(RMS
)
Max. continuous RMS
on-state current.
As AC switch
I
TSM
Max. peak, one cycle
850
1310
t=10ms No voltage
or
non-repetitive on-state
890
1370
t=8.3ms reapplied
I
FSM
or forward current
715
1100
t=10ms 100% V
RRM
750
1150
t=8.3ms reapplied
940
1450
t=10ms T
J
= 25
o
C,
985
1520
t=8.3ms no voltage reapplied
I
2
t
Max. I
2
t for fusing
3.61
8.56
t=10ms No voltage
3.30
7.82
t=8.3ms reapplied
2.56
6.05
t=10ms 100% V
RRM
2.33
5.53
t=8.3ms reapplied
4.42
10.05
t=10ms T
J
= 25
o
C,
4.03
9.60
t=8.3ms no voltage reapplied
I
2
t
Max. I
2
t for fusing (1)
36.1
85.6
KA
2
s
t=0.1 to 10ms, no voltage reapplied
V
T(TO)
Max. value of threshold
0.88
0.85
Low level (3)
voltage (2)
0.91
0.88
High level (4)
r
t
Max. value of on-state
5.90
3.53
Low level (3)
slope resistance (2)
5.74
3.41
High level (4)
V
TM
Max. peak on-state or
I
TM
=
x I
T(AV)
T
J
= 25
o
C
V
FM
forward voltage
I
FM
=
x I
F(AV)
di/dt
Max. non-repetitive rate
T
J
= 25
o
C, from 0.67 V
DRM
,
of rise of turned on
I
TM
=
x I
T(AV)
,
I
g
= 500mA,
current
t
r
< 0.5 s, t
p
> 6 s
T
J
= 25
o
C, anode supply = 6V,
resistive load, gate open circuit
I
L
Max. latching current
400
T
J
= 25
o
C, anode supply = 6V,resistive load
T
J
= T
J
max
T
J
= T
J
max
Parameters
IRK.41
IRK.56
Units
Conditions
100
135
(1) I
2
t for time t
x
=
I
2
t
x
t
x
(2) Average power
=
V
T(TO)
x
I
T(AV)
+
r
t
x
(I
T(RMS)
)
2
(3) 16.7%
x
x I
AV
< I <
x I
AV
(4)
I >
x I
AV
On-state Conduction
I
H
Max. holding current
200
Initial T
J
= T
J
max.
150
A/s
A
KA
2
s
V
m
1.81
1.54
V
mA
or
I
(RMS)
I
(RMS)
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
V
RRM
, maximum
V
RSM
, maximum
V
DRM
, max. repetitive
I
RRM
Voltage
repetitive
non-repetitive
peak off-state voltage,
I
DRM
Code
peak reverse voltage
peak reverse voltage
gate open circuit
125C
-
V
V
V
mA
04
400
500
400
06
600
700
600
08
800
900
800
IRK.41/ .56
10
1000
1100
1000
15
12
1200
1300
1200
14
1400
1500
1400
16
1600
1700
1600
Sinusoidal
half wave,
Initial T
J
= T
J
max.
IRK.41, .56 Series
3
Bulletin I27131 rev. C 09/97
www.irf.com
T
J
Junction operating
temperature range
T
stg
Storage temp. range
- 40 to 125
R
thJC
Max. internal thermal
resistance, junction
0.23
0.20
Per module, DC operation
to case
R
thCS
Typical thermal resistance
case to heatsink
T
Mounting torque 10%
to heatsink
5
busbar
3
wt
Approximate weight
83 (3)
g (oz)
Case style
TO-240AA
JEDEC
Thermal and Mechanical Specifications
Parameters
IRK.41
IRK.56
Units
Conditions
- 40 to 125
0.1
(5) Available with dv/dt = 1000V/
s, to complete code add S90 i.e. IRKT41/16 S90.
A mounting compound is recommended
and the torque should be rechecked after a
period of 3 hours to allow for the spread of
the compound
C
K/W
Nm
Mounting surface flat, smooth and greased.
Flatness < 0.03 mm; roughness
<
0.02 mm
I
RRM
Max. peak reverse and
I
DRM
off-state leakage current
at V
RRM
, V
DRM
2500 (1 min)
50 Hz, circuit to base, all terminals
3500 (1 sec)
shorted
dv/dt Max. critical rate of rise
T
J
= 125
o
C, linear to 0.67 V
DRM
,
of off-state voltage (5)
gate open circuit
15
mA
T
J
= 125
o
C, gate open circuit
500
V/
s
Blocking
V
INS
RMS isolation voltage
V
Triggering
P
GM
Max. peak gate power
10
10
P
G(AV)
Max. average gate power
2.5
2.5
I
GM
Max. peak gate current
2.5
2.5
A
-V
GM
Max. peak negative
gate voltage
4.0
T
J
= - 40C
2.5
T
J
= 25C
1.7
T
J
= 125C
270
T
J
= - 40C
150
mA
T
J
= 25C
80
T
J
= 125C
V
GD
Max. gate voltage
that will not trigger
I
GD
Max. gate current
that will not trigger
Parameters
IRK.41
IRK.56
Units
Conditions
0.25
V
6
mA
Anode supply = 6V
resistive load
V
GT
Max. gate voltage
required to trigger
Anode supply = 6V
resistive load
I
GT
Max. gate current
required to trigger
W
V
10
T
J
= 125
o
C,
rated V
DRM
applied
T
J
= 125
o
C,
rated V
DRM
applied
Parameters
IRK.41
IRK.56
Units
Conditions
IRK.41, .56 Series
4
Bulletin I27131 rev. C 09/97
www.irf.com
Sine half wave conduction
Rect. wave conduction
Devices
Units
180
o
120
o
90
o
60
o
30
o
180
o
120
o
90
o
60
o
30
o
IRK.41
0.11
0.13
0.17
0.23
0.34
0.09
0.14
0.18
0.23
0.34
IRK.56
0.09
0.11
0.13
0.18
0.27
0.07
0.11
0.14
0.19
0.28
C/W
Outlines Table
IRKT../.. (*)
IRKL../.. (*)
IRKH../.. (*)
(*) For terminals connections, see Circuit configurations Table
All dimensions in millimeters (inches)
30
0
.
5
(
1
.
1
8
0.
02)
29
0
.
5
(
1
.
1
3
0.
0
2
)
6
.
1
0.
3
(
0
.
2
4
0.
01)
24
0
.
5
18 REF.
(0.71)
15.5 0.5
(0.61 0.02)
30
0
.
1
(
1
.
18
0.
04
)
Faston tab. 2.8 x 0.8
20
.
5
0.
75
(
0
.
8
1
0.
0
3
)
15 0.5
(0.59 0.02)
20 0.5
(0.79 0.02)
5.
8
0.
25
(
0
.
16
0.
0
1
)
4
P
i
t
c
h
4.
0
0
.
2
(
0
.
23
0.
01)
(0.25 0.01)
6.3 0.3
57
6
2
3
80 0.3
(3.15 0.01)
(3.62 0.02)
92 0.5
20 0.5
Screws M5 x 0.8
(0.11 x 0.03)
(
0
.
94
0
.
02)
(0.79 0.02)
1
30
0
.
5
(
1
.
18
0.
02
)
29
0
.
5
(
1
.
1
3
0.
0
2
)
6.
1
0.
3
(
0
.
24
0.
01
)
24
0.
5
18 REF.
(0.71)
15.5 0.5
(0.61 0.02)
30
0
.
1
(
1
.
18
0.
04
)
Faston tab. 2.8 x 0.8
20.
5
0.
75
(
0
.
8
1
0.
03)
15 0.5
(0.59 0.02)
20 0.5
(0.79 0.02)
(
0
.
16
0.
01)
4
P
i
t
c
h
4.
0
0.
2
(0.25 0.01)
6.3 0.3
5
2
3
80 0.3
(3.15 0.01)
(3.62 0.02)
92 0.5
20 0.5
Screws M5 x 0.8
(0.11 x 0.03)
(
0
.
94
0.
02
)
(0.79 0.02)
1
30
0
.
5
(
1
.
1
8
0.
0
2
)
29
0
.
5
(
1
.
1
3
0.
02)
6.
1
0.
3
(
0
.
2
4
0.
01
)
24
0
.
5
18 REF.
(0.71)
15.5 0.5
(0.61 0.02)
30
0
.
1
(
1
.
18
0.
0
4
)
Faston tab. 2.8 x 0.8
20.
5
0.
75
(
0
.
8
1
0.
03)
15 0.5
(0.59 0.02)
20 0.5
(0.79 0.02)
(0
.
1
6
0.
01)
P
i
t
c
h
4.
0
0
.
2
(0.25 0.01)
6.3 0.3
76
2
3
80 0.3
(3.15 0.01)
(3.62 0.02)
92 0.5
20 0.5
Screws M5 x 0.8
(0.11 x 0.03)
(0
.
9
4
0.
02
)
(0.79 0.02)
1
R Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
NOTE: To order the Optional Hardware see Bulletin I27900
IRK.41, .56 Series
5
Bulletin I27131 rev. C 09/97
www.irf.com
IRK
T
56
/
16
S90
Device Code
1
2
3
4
5
1
-
Module type
2
-
Circuit configuration (See Circuit Configuration table)
3
-
Current code * *
4
-
Voltage code (See Voltage Ratings table)
5
-
dv/dt code:
S90 = dv/dt 1000 V/s
No letter = dv/dt 500 Vs
* *
Available with no auxiliary cathode.
To specify change:
41 to 42
56 to 57
e.g. : IRKT57/16 etc.
Ordering Information Table
IRK.57 types
With no auxiliary cathode
Circuit Configurations Table
IRKT
IRKH
IRKL
+
K2 G2
-
K1
G1
~
(1)
(2)
(3)
(4) (5)
(7) (6)
+
-
K1
G1
~
(1)
(2)
(3)
(4) (5)
+
-
~
(1)
(2)
(3)
K2
(7)
G2
(6)
6
4
13.8 (0.53)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
80
90
100
110
120
130
0
10
20
30
40
50
M
a
x
i
m
u
m
A
llo
w
a
b
l
e C
a
s
e
Tem
p
er
a
t
u
r
e (
C
)
30
60
90
120
180
Average On-state Current (A)
Conduction Angle
IRK.41.. Series
R (DC) = 0.46 K/W
thJC
80
90
100
110
120
130
0
20
40
60
80
DC
30
60
90
120
180
Average On-state Current (A)
M
a
x
i
mu
m A
l
l
o
w
a
b
l
e
C
a
s
e
T
e
mp
e
r
a
t
u
r
e
(
C
)
Conduction Period
IRK.41.. Series
R (DC) = 0.46 K/W
thJC
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