Parameters
IRK.41
IRK.56
Units
I
T(AV)
or I
F(AV)
@ 85C
I
O(RMS)
(*)
100
135
A
I
TSM
@ 50Hz
850
1310
A
I
FSM
@ 60Hz
890
1370
A
I
2
t
@ 50Hz
3.61
8.50
KA
2
s
@ 60Hz
3.30
7.82
KA
2
s
I
2
t
36.1
85.0
KA
2
s
V
RRM
range
400 to 1600
V
T
STG
- 40 to 125
o
C
T
J
- 40 to125
o
C
(*) As AC switch.
45
60
A
Major Ratings and Characteristics
45 A
60 A
ADD-A-pak
TM
GEN V Power Modules
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
IRK.41, .56 SERIES
Bulletin I27131 rev. G 10/02
1
www.irf.com
Features
High Voltage
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
UL E78996 approved
3500V
RMS
isolating voltage
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage of
Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a
solid Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
Benefits
Up to 1600V
Full compatible TO-240AA
High Surge capability
Easy Mounting on heatsink
Al
2
0
3
DBC insulator
Heatsink grounded
Electrical Description
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
IRK.41, .56 Series
2
Bulletin I27131 rev. G 10/02
www.irf.com
I
T(AV)
Max. average on-state
current (Thyristors)
45
60
180
o
conduction, half sine wave,
I
F(AV)
Maximum average
45
60
T
C
= 85
o
C
forward current (Diodes)
I
O(RMS
)
Max. continuous RMS
on-state current.
As AC switch
I
TSM
Max. peak, one cycle
850
1310
t=10ms No voltage
or
non-repetitive on-state
890
1370
t=8.3ms reapplied
I
FSM
or forward current
715
1100
t=10ms 100% V
RRM
750
1150
t=8.3ms reapplied
940
1450
t=10ms T
J
= 25
o
C,
985
1520
t=8.3ms no voltage reapplied
I
2
t
Max. I
2
t for fusing
3.61
8.56
t=10ms No voltage
3.30
7.82
t=8.3ms reapplied
2.56
6.05
t=10ms 100% V
RRM
2.33
5.53
t=8.3ms reapplied
4.42
10.05
t=10ms T
J
= 25
o
C,
4.03
9.60
t=8.3ms no voltage reapplied
I
2
t
Max. I
2
t for fusing (1)
36.1
85.6
KA
2
s
t=0.1 to 10ms, no voltage reapplied
V
T(TO)
Max. value of threshold
0.88
0.85
Low level (3)
voltage (2)
0.91
0.88
High level (4)
r
t
Max. value of on-state
5.90
3.53
Low level (3)
slope resistance (2)
5.74
3.41
High level (4)
V
TM
Max. peak on-state or
I
TM
=
x I
T(AV)
V
FM
forward voltage
I
FM
=
x I
F(AV)
di/dt
Max. non-repetitive rate
T
J
= 25
o
C, from 0.67 V
DRM
,
of rise of turned on
I
TM
=
x I
T(AV)
,
I
g
= 500mA,
current
t
r
< 0.5 s, t
p
> 6 s
T
J
= 25
o
C, anode supply = 6V,
resistive load, gate open circuit
I
L
Max. latching current
400
T
J
= 25
o
C, anode supply = 6V,resistive load
T
J
= T
J
max
T
J
= T
J
max
Parameters
IRK.41
IRK.56
Units
Conditions
100
135
(1) I
2
t for time t
x
=
I
2
t
x
t
x
(2) Average power
=
V
T(TO)
x
I
T(AV)
+
r
t
x
(I
T(RMS)
)
2
(3) 16.7%
x
x I
AV
< I <
x I
AV
(4)
I >
x I
AV
On-state Conduction
I
H
Max. holding current
200
Initial T
J
= T
J
max.
150
A/s
A
KA
2
s
V
m
1.81
1.54
V
mA
or
I
(RMS)
I
(RMS)
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
V
RRM
, maximum
V
RSM
, maximum
V
DRM
, max. repetitive
I
RRM
Voltage
repetitive
non-repetitive
peak off-state voltage,
I
DRM
Code
peak reverse voltage peak reverse voltage
gate open circuit
125C
-
V
V
V
mA
04
400
500
400
06
600
700
600
08
800
900
800
IRK.41/ .56
10
1000
1100
1000
15
12
1200
1300
1200
14
1400
1500
1400
16
1600
1700
1600
Sinusoidal
half wave,
Initial T
J
= T
J
max.
T
J
= 25C
IRK.41, .56 Series
3
Bulletin I27131 rev. G 10/02
www.irf.com
A mounting compound is recommended
and the torque should be rechecked after a
period of 3 hours to allow for the spread of
the compound
T
J
Junction operating
temperature range
T
stg
Storage temp. range
- 40 to 125
R
thJC
Max. internal thermal
resistance, junction
0.23
0.20
Per module, DC operation
to case
R
thCS
Typical thermal resistance
case to heatsink
T
Mounting torque 10%
to heatsink
5
busbar
3
wt
Approximate weight
110 (4)
gr (oz)
Case style
TO-240AA
JEDEC
Thermal and Mechanical Specifications
Parameters
IRK.41
IRK.56
Units
Conditions
- 40 to 125
0.1
(5) Available with dv/dt = 1000V/
s, to complete code add S90 i.e. IRKT41/16AS90.
C
K/W
Nm
Mounting surface flat, smooth and greased
I
RRM
Max. peak reverse and
I
DRM
off-state leakage current
at V
RRM
, V
DRM
2500 (1 min)
50 Hz, circuit to base, all terminals
3500 (1 sec)
shorted
dv/dt Max. critical rate of rise
T
J
= 125
o
C, linear to 0.67 V
DRM
,
of off-state voltage (5)
gate open circuit
15
mA
T
J
= 125
o
C, gate open circuit
500
V/
s
Blocking
V
INS
RMS isolation voltage
V
Triggering
P
GM
Max. peak gate power
10
10
P
G(AV)
Max. average gate power
2.5
2.5
I
GM
Max. peak gate current
2.5
2.5
A
-V
GM
Max. peak negative
gate voltage
4.0
T
J
= - 40C
2.5
T
J
= 25C
1.7
T
J
= 125C
270
T
J
= - 40C
150
mA
T
J
= 25C
80
T
J
= 125C
V
GD
Max. gate voltage
that will not trigger
I
GD
Max. gate current
that will not trigger
Parameters
IRK.41
IRK.56
Units
Conditions
0.25
V
6
mA
Anode supply = 6V
resistive load
V
GT
Max. gate voltage
required to trigger
Anode supply = 6V
resistive load
I
GT
Max. gate current
required to trigger
W
V
10
T
J
= 125
o
C,
rated V
DRM
applied
T
J
= 125
o
C,
rated V
DRM
applied
Parameters
IRK.41
IRK.56
Units
Conditions
Sine half wave conduction
Rect. wave conduction
Devices
Units
180
o
120
o
90
o
60
o
30
o
180
o
120
o
90
o
60
o
30
o
IRK.41
0.11
0.13
0.17
0.23
0.34
0.09
0.14
0.18
0.23
0.34
IRK.56
0.09
0.11
0.13
0.18
0.27
0.07
0.11
0.14
0.19
0.28
C/W
R Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
IRK.41, .56 Series
4
Bulletin I27131 rev. G 10/02
www.irf.com
IRK
T
56
/
16
A S90
Device Code
1
2
3
4
5
1
-
Module type
2
-
Circuit configuration (See Circuit Configuration table below)
3
-
Current code * *
4
-
Voltage code (See Voltage Ratings table)
5
-
A : Gen V
6
-
dv/dt code:
S90 = dv/dt 1000 V/s
No letter = dv/dt 500 Vs
Ordering Information Table
6
* * Available with no auxiliary cathode.
To specify change:
41 to 42
56 to 57
e.g. : IRKT57/16A etc.
IRK.57 types
With no auxiliary cathode
Outline Table
Dimensions are in millimeters and [inches]
NOTE: To order the Optional Hardware see Bulletin I27900
+
K2 G2
-
K1
G1
~
(1)
(2)
(3)
(4) (5)
(7) (6)
+
-
K1
G1
~
(1)
(2)
(3)
(4) (5)
+
-
~
(1)
(2)
(3)
K2
(7)
G2
(6)
IRKT
IRKH
IRKL
IRKN
+
-
K1
G1
+
(1)
(2)
(3)
(4) (5)
IRK.41, .56 Series
5
Bulletin I27131 rev. G 10/02
www.irf.com
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
80
90
100
110
120
130
0
10
20
30
40
50
M
a
x
i
mu
m
A
l
l
o
w
a
b
l
e
C
a
s
e
T
e
mp
er
at
u
r
e
(
C)
30
60
90
120
180
Average On-state Current (A)
Conduction Angle
IRK.41.. Series
R (DC) = 0.46 K/W
thJC
80
90
100
110
120
130
0
20
40
60
80
DC
30
60
90
120
180
Average On-state Current (A)
Ma
x
i
mu
m
A
l
l
o
w
a
b
l
e Cas
e
T
e
mp
er
a
t
u
r
e (
C
)
Conduction Period
IRK.41.. Series
R (DC) = 0.46 K/W
thJC
Fig. 3 - On-state Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 4 - On-state Power Loss Characteristics
0
20
40
60
80
100
0
20
40
60
80
DC
180
120
90
60
30
RMS Limit
Conduction Period
Ma
x
i
m
u
m A
v
e
r
a
g
e
O
n
-
s
t
a
t
e
P
o
w
e
r
L
o
s
s
(
W
)
Average On-state Current (A)
IRK.41.. Series
Per Junction
T = 125C
J
0
10
20
30
40
50
60
70
0
10
20
30
40
50
180
120
90
60
30
RMS Limit
Conduction Angle
M
a
x
i
mu
m A
v
e
r
a
g
e On
-st
a
t
e
P
o
wer
L
o
ss
(
W
)
Average On-state Current (A)
IRK.41.. Series
Per Junction
T = 125C
J
300
400
500
600
700
800
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
P
e
a
k
H
a
l
f
S
i
n
e
W
a
v
e
O
n
-
s
tate
C
u
r
r
e
n
t
(
A
)
Initial T = 125C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
IRK.41.. Series
Per Junction
300
400
500
600
700
800
900
0.01
0.1
1
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Initial T = 125C
No Voltage Reapplied
Rated V Reapplied
RRM
J
Of Conduction May Not Be Maintained.
Pe
ak
Hal
f
S
i
n
e
W
a
v
e
O
n
-
s
t
a
t
e
C
u
r
r
e
n
t
(
A
)
IRK.41.. Series
Per Junction
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