500 A
THYRISTOR / DIODE and
THYRISTOR / THYRISTOR
Bulletin I27401 rev. A 09/97
1
IRK.500.. SERIES
SUPER MAGN-A-pak
TM
Power Modules
www.irf.com
Features
High current capability
3000 V
RMS
isolating voltage with non-toxic substrate
High surge capability
Industrial standard package
UL E78996 approved
Typical Applications
Motor starters
DC motor controls - AC motor controls
Uninterruptable power supplies
Major Ratings and Characteristics
Parameters
IRK.500..
Units
I
T(AV)
or I
F(AV)
500
A
@ T
C
82
C
I
T(RMS)
785
A
@ T
C
82
C
I
TSM
or I
FSM
@ 50Hz
17.8
KA
@ 60Hz
18.7
KA
I
2
t
@ 50Hz
1591
KA
2
s
@ 60Hz
1452
KA
2
s
I
2
t
15910
KA
2
s
V
DRM
/V
RRM
range
800 to 1600
V
T
STG
range
- 40 to 150
C
T
J
range
- 40 to 130
C
IRK.500.. Series
2
Bulletin I27401 rev. A 09/97
www.irf.com
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
V
RRM
/V
DRM
, maximum repetitive
V
RSM
, maximum non-
I
RRM
/I
DRM
max.
Type number
Code
peak reverse voltage
repetitive peak rev. voltage
@ T
J
= T
J
max.
V
V
mA
08
800
900
12
1200
1300
14
1400
1500
16
1600
1700
IRK.500..
100
I
T(AV)
Maximum average on-state current
500
A
180 conduction, half sine wave
I
F(AV)
@ Case temperature
82
C
I
T(RMS)
Maximum RMS on-state current
785
A
180 conduction, half sine wave @ T
C
= 82C
I
TSM
Maximum peak, one-cycle,
17.8
KA
t = 10ms
No voltage
I
FSM
non-repetitive surge current
18.7
t = 8.3ms
reapplied
15.0
t = 10ms
100% V
RRM
15.7
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
1591
KA
2
s
t = 10ms
No voltage
Initial T
J
= T
J
max.
1452
t = 8.3ms
reapplied
1125
t = 10ms
100% V
RRM
1027
t = 8.3ms
reapplied
I
2
t
Maximum I
2
t for fusing
15910
KA
2
s t = 0.1 to 10ms, no voltage reapplied
V
T(TO)1
Low level value of threshold voltage
0.85
V
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
V
T(TO)2
High level value of threshold voltage
0.93
(I >
x I
T(AV)
), T
J
= T
J
max.
r
t1
Low level value of on-state slope resistance
0.36
m
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
r
t2
High level value of on-state slope resistance
0.32
(I >
x I
T(AV)
), T
J
= T
J
max.
V
TM
Maximum on-state or forward
1.50
V
I
pk
= 1500A, T
J
= 25C, t
p
= 10ms sine pulse
V
FM
voltage drop
I
H
Maximum holding current
500
mA
T
J
= 25C, anode supply 12V resistive load
I
L
Typical latching current
1000
Parameter
IRK.500..
Units Conditions
On-state Conduction
di/dt
Maximum rate of rise of turned-on
1000
A/s
T
J
= T
J
max., I
TM
= 400A, V
DRM
applied
current
t
d
Typical delay time
2.0
s
Gate current 1A, di
g
/dt = 1A/s
V
d
= 0.67% V
DRM
, T
J
= 25C
t
q
Typical turn-off time
200
s
I
TM
= 750A, T
J
= T
J
max, di/dt = -60A/s,
V
R
= 50V, dv/dt = 20V/s, Gate 0 V 100
Parameter
IRK.500..
Units Conditions
Switching
IRK.500.. Series
3
Bulletin I27401 rev. A 09/97
www.irf.com
T
J
Max. junction operating temperature range
- 40 to 130
C
T
stg
Max. storage temperature range
- 40 to 150
R
thJC
Max. thermal resistance, junction to
0.065
K/W
Per junction, DC operation
case
R
thC-hs
Max. thermal resistance, case to
0.02
K/W
heatsink
T
Mounting torque 10% SMAP to heatsink
6 - 8
Nm
busbar to SMAP
12 - 15
wt
Approximate weight
1500
g
Case style
SUPER MAGN-A-pak
See outline table
dv/dt
Maximum critical rate of rise of off-state
1000
V/s
T
J
= 130C., linear to V
D
= 80% V
DRM
voltage
V
INS
RMS isolation voltage
3000
V
t = 1 s
I
RRM
Maximum peak reverse and off-state
100
mA
T
J
= T
J
max., rated V
DRM
/V
RRM
applied
I
DRM
leakage current
Parameter
IRK.500..
Units Conditions
Blocking
Parameter
IRK.500..
Units Conditions
Triggering
P
GM
Maximum peak gate power
10
W
T
J
= T
J
max., t
p
< 5ms
P
G(AV)
Maximum peak average gate power
2.0
W
T
J
= T
J
max., f = 50Hz, d% = 50
+ I
GM
Maximum peak positive gate current
3.0
A
T
J
= T
J
max., t
p
< 5ms
+ V
GM
Maximum peak positive gate voltage
20
V
- V
GM
Maximum peak negative gate voltage
5.0
V
I
GT
Max. DC gate current required to trigger
200
mA
T
J
= 25C
V
ak
12V
V
GT
DC gate voltage required to trigger
3.0
V
T
J
= 25C
V
ak
12V
I
GD
DC gate current not to trigger
10
mA
T
J
= T
J
max.
V
GD
DC gate voltage not to trigger
0.25
V
Parameter
IRK.500..
Units Conditions
Thermal and Mechanical Specifications
A mounting compound is recommended and the
torque should be rechecked after a period of 3 hours
to allow for the spread of the compound
IRK.500.. Series
4
Bulletin I27401 rev. A 09/97
www.irf.com
IRK
T
500
-
16
1
2
3
1
-
Module type
2
-
Circuit configuration (See Circuit Configurations Table)
3
-
Current rating
4
-
Voltage code: Code x 100 = V
RRM
(See Voltage Ratings Table)
4
Device Code
Ordering Information Table
R
thJC
Conduction
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
Conduction angle
Sinusoidal conduction
Rectangular conduction
Units
Conditions
180
0.009
0.006
120
0.011
0.011
90
0.014
0.015
K/W
T
J
= T
J
max.
60
0.021
0.022
30
0.037
0.038
IRKT
IRKH
IRKL
Circuit Configurations Table
+
7(K2)
6(G2)
-
4(K1)
5(G1)
~
1
2
3
+
7(K2)
6(G2)
-
~
1
2
3
+
-
4(K1)
5(G1)
~
1
2
3
NOTE: To order the Optional Hardware see Bulletin I27900
IRK.500.. Series
5
Bulletin I27401 rev. A 09/97
www.irf.com
Outline Table
All dimensions in millimeters (inches)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
60
70
80
90
100
110
120
130
0
100
200
300
400
500
600
30
60
90
120
180
Average On-state Current (A)
M
a
x
i
mu
m
A
l
l
o
w
a
b
l
e
C
a
s
e
T
e
mp
e
r
a
t
u
r
e
(
C
)
Conduction Angle
IRK.500.. Series
R (DC) = 0.065 K/W
thJC
60
70
80
90
100
110
120
130
0
100 200 300 400 500 600 700 800 900
DC
30
60
90
120
180
Average On-state Current (A)
M
a
x
i
m
u
m
A
l
l
o
w
a
b
l
e C
a
s
e
T
e
m
p
er
a
t
u
r
e (
C
)
Conduction Period
IRK.500.. Series
R (DC) = 0.065 K/W
thJC
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