Irktf200p1-revC
200 A
FAST THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
Bulletin I27099 rev. C 03/01
1
IRK.F200.. SERIES
MAGN-A-pak
Power Modules
www.irf.com
Features
Fast turn-off thyristor
Fast recovery diode
High surge capability
Electrically isolated baseplate
3000 V
RMS
isolating voltage
Industrial standard package
UL E78996 approved
Description
These series of MAGN-A-pak modules are intended for
applications such as self-commutated inverters, DC
choppers, electronic welders, induction heating and
others where fast switching characteristics are required.
Parameters
IRK.F200..
Units
I
T(AV)
200
A
@ T
C
85
C
I
T(RMS)
444
A
I
TSM
@ 50Hz
7600
A
@ 60Hz
8000
A
I
2
t
@ 50Hz
290
KA
2
s
@ 60Hz
265
KA
2
s
I
2
t
2900
KA
2
s
t
q
20 and 25
s
t
rr
2
s
V
DRM
/ V
RRM
up to 1200
V
T
J
range
- 40 to 125
o
C
Major Ratings and Characteristics
IRK.F200.. Series
2
Bulletin
I27099
rev.
C
0
3
/
01
www.irf.com
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
V
RRM
/V
DRM
, maximum repetitive
V
RSM
, maximum non-
I
RRM
/I
DRM
max.
Type number
Code
peak reverse voltage
repetitive peak rev. voltage
@ T
J
= 125C
V
V
mA
08
800
800
12
1200
1200
I
T(AV)
Maximum average on-state current
200
A
180 conduction, half sine wave
@ Case temperature
85
C
I
T(RMS)
Maximum RMS current
444
A
as AC switch
I
TSM
Maximum peak, one-cycle,
7600
A
t = 10ms
No voltage
non-repetitive surge current
8000
t = 8.3ms
reapplied
6400
t = 10ms
100% V
RRM
6700
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
290
KA
2
s
t = 10ms
No voltage
Initial T
J
= 125C
265
t = 8.3ms
reapplied
205
t = 10ms
100% V
RRM
187
t = 8.3ms
reapplied
I
2
t
Maximum I
2
t for fusing
2900
KA
2
s t = 0 to 10ms, no voltage reapplied
V
T(TO)1
Low level value of threshold voltage
1.18
V
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
V
T(TO)2
High level value of threshold voltage
1.25
(I >
x I
T(AV)
), T
J
= T
J
max.
r
t1
Low level value of on-state slope resistance
0.74
mW
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
r
t2
High level value of on-state slope resistance
0.70
(I >
x I
T(AV)
), T
J
= T
J
max.
V
TM
Maximum on-state voltage drop
1.73
V
I
pk
= 600A, T
J
= T
J
max., t
p
= 10ms sine pulse
I
H
Maximum holding current
600
mA
T
J
= 25C, I
T
> 30 A
I
L
Typical latching current
1000
mA
T
J
= 25C, V
A
= 12V, Ra = 6
, Ig
= 1A
Parameter
IRK.F200..
Units Conditions
On-state Conduction
Frequency f
Units
50Hz
380
560
630
850
2460
3180
A
400Hz
460
690
710
1060
1570
2080
A
2500Hz
310
450
530
760
630
860
A
5000Hz
250
360
410
560
410
560
A
10000Hz
180
280
300
410
-
-
A
Recovery voltage Vr
50
50
50
50
50
50
V
Voltage before turn-on Vd
80% V
DRM
80% V
DRM
80% V
DRM
V
Rise of on-state current di/dt
50
50
-
-
-
-
A/
s
Case temperature
85
60
85
60
85
60
C
Equivalent values for RC circuit
10
/0.47
F
10
/0.47
F
10
/0.47
F
I
TM
I
TM
180
o
el
100s
I
TM
180
o
el
Current Carrying Capacity
IRK.F200-
50
IRK.F200.. Series
3
Bulletin
I27099
rev.
C
0
3
/
01
www.irf.com
T
J
Max. junction operating temperature range
- 40 to 125
C
T
stg
Max. storage temperature range
- 40 to 150
R
thJC
Max. thermal resistance, junction to
0.125
K/W
Per junction, DC operation
case
R
thC-hs
Max. thermal resistance, case to
0.025
K/W
Mounting surface flat and greased
heatsink
Per module
T
Mounting torque 10% MAP to heatsink
4 - 6 (35 - 53)
Nm
busbar to MAP
4 - 6 (35 - 53)
(lb*in)
wt
Approximate weight
500 (17.8)
g (oz)
dv/dt
Maximum critical rate of rise of off-state
1000
V/s
T
J
= 125C., exponential to = 67% V
DRM
voltage
V
INS
RMS isolation voltage
3000
V
50 Hz, circuit to base, T
J
= 25C, t = 1 s
I
RRM
Maximum peak reverse and off-state
50
mA
T
J
= 125C, rated V
DRM
/V
RRM
applied
I
DRM
leakage current
Parameter
IRK.F200..
Units Conditions
Blocking
di/dt
Maximum non-repetitive rate of rise
800
A/s
Gate drive 20V, 20
, tr
1ms, V
D
= 80% V
DRM
T
J
= 25C
t
rr
Maximum recovery time
2
s
I
TM
= 350A, di/dt = -25A/s, V
R
= 50V, T
J
= 25C
t
q
Maximum turn-off time
K
J
I
TM
= 750A, T
J
= 125C, di/dt = -25A/s,
20
25
s
V
R
= 50V, dv/dt = 400V/s linear to 80% V
DRM
Parameter
IRK.F200..
Units Conditions
Switching
Parameter
IRK.F200..
Units Conditions
Triggering
P
GM
Maximum peak gate power
60
W
f = 50 Hz, d% = 50
P
G(AV)
Maximum peak average gate power
10
W
T
J
= 125C, f = 50Hz, d% = 50
I
GM
Maximum peak positive gate current
10
A
T
J
= 125C, t
p
< 5ms
- V
GM
Maximum peak negative gate voltage
5
V
I
GT
Max. DC gate current required to trigger
200
mA
T
J
= 25C, V
ak
12V, Ra = 6
V
GT
DC gate voltage required to trigger
3
V
I
GD
DC gate current not to trigger
20
mA
T
J
= 125C, rated V
DRM
applied
V
GD
DC gate voltage not to trigger
0.25
V
Parameter
IRK.F200..
Units Conditions
Thermal and Mechanical Specifications
A mounting compound is recommended. The torque
should be rechecked after a period of 3 hours to allow
for the spread of the compound. Use of cable lugs is
not recommendd, busbars should be used and
restrained during tightening. Threads must be
lubricated with a compound
IRK.F200.. Series
4
Bulletin I27099 rev. C 03/01
www.irf.com
R
thJC
Conduction
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
Conduction angle
Sinusoidal conduction Rectangular conduction Units
Conditions
180 0.009 0.006 K/
W T
J
= 125C
120
0.010
0.011
90
0.014
0.015
60
0.020
0.020
30
0.032
0.033
IRK T F 200 -
12 H K
1
2
3
1
- Module type
2
- Circuit configuration
3
- Fast SCR
4
- Current rating: I
T(AV)
x 10 rounded
5
- Voltage code: Code x 100 = V
RRM
(See Voltage Ratings Table)
6
- dv/dt code: H
400V/s
7
- t
q
code: K
20s
J
25s
4
De
vice Code
Ordering Information Table
5
6
7
NOTE: To order the Optional Hardware see Bulletin I27900
IRK.F200.. Series
5
Bulletin I27099 rev. C 03/01
www.irf.com
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
IRKLF..
IRKUF..
IRKVF..
IRKKF..
IRKNF..
IRKHF..
IRKTF..
- All dimensions in millimeters (inches)
- Dimensions are nominal
- Full engineering drawings are available
on request
- UL identification number for gate
and cathode wire: UL 1385
- UL identification number for package:
UL 94V0
Outline Table
60
70
80
90
100
110
120
130
0
40
80
120
160
200
240
30
60
90
120
180
A ve ra ge O n -sta te C urre n t (A )
M
a
x
i
m
u
m
Al
l
o
w
a
b
l
e C
a
s
e
T
e
m
p
er
a
t
u
r
e (
C
)
C o nd u c tio n A ng le
IR K.F200.. Series
R (D C ) = 0.12 5 K/W
thJC
60
70
80
90
100
110
120
130
0
50
100
150
200
250
300
350
D C
3 0
6 0
9 0
12 0
1 8 0
A ve rag e On -state C urren t (A )
M
a
x
i
mu
m
A
l
l
o
w
a
b
l
e
C
a
s
e
T
e
mp
e
r
a
t
u
r
e
(
C
)
C o nd uc tio n P erio d
IR K .F2 00.. Serie s
R (D C ) = 0.12 5 K/W
thJC
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