www.docs.chipfind.ru
Features:
n
Extremely Rugged for Harsh Operating
Environments
n
Over Temperature Protection
n
Over Current Protection
n
Active Drain to Source Clamp
n
ESD Protection
n
Compatible with standard POWER
MOSFET
n
Low Operating Input Current
n
Monolithic Construction
n
Dual set/reset Threshold Input
IRSF3010
Available Packages
IRSF3010 - Block Diagram
V
ds(clamp)
50 V
R
ds(on)
80 m
I
ds(sd)
11 A
T
j(sd)
155 C
E
AS
400 mJ
Source
Drain
Applications:
n
DC Motor Drive
n
Solenoid Driver
FULLY PROTECTED POWER MOSFET SWITCH
Pin Assignment
Pin 1 - Input
Pin 2 - Drain
Pin 3 - Source
Tab - Drain
Provisional Data Sheet No.PD-6.0027A
3
2
1
Tab
IRSF3010
IRSF3010S
Rating Summary:
General Description:
The IRSF3010 is a three terminal monolithic
SMART POWER MOSFET with built in short cir-
cuit, over-temperature, ESD and over-voltage pro-
tections.
The on chip protection circuit latches off the
POWER MOSFET in case the drain current ex-
ceeds 14A (typical) or the junction temperature ex-
ceeds 165C (typical) and keeps it off until the
input is driven low. The drain to source voltage
is actively clamped at 55V (typical), prior to the
avalanche of POWER MOSFET, thus improving
its performance during turn off with inductive
loads.
The input current requirements are very low
(300uA) which makes the IRSF3010 compatible with
most existing designs based on standard
POWER MOSFETs.
Next Data Sheet
Index
Previous Datasheet
To Order
IRSF3010
2
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. (Tc =
25C unless otherwise specified.)
Symbol
Parameter Definition
Min.
Max.
Test Conditions
Vds, max
Continuous Drain to Source Voltage -- 50
Vin, max
Continuous Input Voltage -0.3
10
Ids
Continuous Drain Current --
self limited
Pd
Power Dissipation
--
40
W
Tc
25C
Linear Derating Factor for Tc > 25
C
--
0.33 W/C
EAS
Unclamped Single Pulse Inductive Energy
--
400
mJ
Vesd1
Electrostatic Discharge Voltage (Human Body Model)
--
4000
1000pF. 1.5k
Vesd2
(Machine Model)
--
1000
200pF, 0
T
Jop
Junction Temperature
-55
self-limited
T
Stg
Storage Temperature
-55
175
T
L
Lead Temperature (Soldering, 10 seconds)
--
300
Thermal Characteristics
Units
V
V
o
C
Symbol
Parameter Definition
Min. Typ. Max. Units
Test Conditions
Vds,clamp
Drain to Source Clamp Voltage
50
54
--
Ids = 10mA
--
56
62
Ids = 11A, tp = 700
S
Rds(on)
Drain to Source On Resistance
--
70
80
Vin = 5V, Ids = 4A
--
85
--
Vin = 4V, Ids = 4A
--
53
--
Vin = 10V, Ids = 4A
Idss
Drain to Source Leakage Current
--
--
10
Vds = 12V, Vin = 0V
--
--
100
Vds = 50V, Vin = 0V
--
10
250
Vds=40V,Vin=0V,Tc=150
o
C
Vth
Input Threshold Voltage
1.5
2.0
2.5
V
Vds = 5V, Ids = 1mA
Ii, on
Input Supply Current (Normal Operation)
--
0.25
0.6
Vin = 5V
--
0.35
0.85
Vin = 10V
Ii, off
Input Supply Current (Protection Mode)
--
0.5
1.0
Vin = 5V
--
0.6
1.2
Vin = 10V
Vin, clamp Input Clamp Voltage
10
10.8
--
Iin = 10mA
Vsd
Body-Drain Diode Forward Drop
--
1.2
1.5
Ids = -17A, Rin = 1k
Static Electrical Characteristics
(Tc = 25C unless otherwise specified.)
V
m
A
mA
V
Symbol Parameter Definition
Min. Typ. Max. Units Test Conditions
R
jc
Thermal Resistance, Junction to Case
--
3.0
--
C/W
R
jA
Thermal Resistance, Junction to Ambient
--
60
--
C/W
Next Data Sheet
Index
Previous Datasheet
To Order
IRSF3010
3
Notes:
1. EAS is tested with a constant current source of 11A applied for 700
S with Vin = OV and starting Tj = 25
o
C.
2. Input current must be limited to less than 5mA with a 1k
resistor in series with the input when the Body-Drain Diode
is forward biased.
Symbol Parameter Definition
Min.
Typ. Max. Units Test Conditions
Vds,clamp Temperature Coefficient of Drain to Source
Clamp Voltage
--
18.2
--
Vth
Temperature Coefficient of Input Threshold
Voltage
--
-3.2
--
Vin,clamp Temperature Coefficient of Input Clamp
Voltage
--
7.0
--
Ids(sd)
Temperature Coefficient of Over-Current
Shutdown Threshold
--
-21.5 -- mA/
o
C
Ids = 10mA
Vds = 5V, Ids = 1mA
Iin = 10mA
Vin = 5V
mV/
o
C
Temperature Coefficients of Electrical Characteristics:
(Please see Figures 3 through 14 for more data on thermal characteristics of other electrical parameters.
Symbol Parameter Definition
Min.
Typ. Max. Units Test Conditions
tdon
Turn-On Delay time
--
425
650
Vin = 5V
--
150
--
Vin = 10V
tr
Rise Time
--
2000
4000
Vin = 5V
--
425
--
Vin = 10V
tdoff
Turn-Off Delay time
--
650
1000
Vin = 5V
--
850
--
Vin = 10V
tf
Fall Time
--
500
800
Vin = 5V
--
450
--
Vin = 10V
Switching Electrical Characteristics:
(Vcc = 14V, Resistive Load RL = 5
, Tc = 25 C.) Please refer to Figure 15 for switching time definitions.
nS
Symbol Parameter Definition
Min. Typ. Max. Units Test Conditions
Ids(sd)
Over-Current Shutdown Threshold
11
14
17
A
Vin = 5V
Tj(sd)
Over Temperature Shutdown Threshold
155
165
--
C
Vin = 5V, Ids = 2A
Vprotect
Minimum Input Voltage for Over-temp fxn.
--
3
--
V
tIresp
Over Current Response Time
--
2
--
See figure 16 for definition
tIblank
Over Current Blanking Time
--
3
--
See figure 16 for definition
Ipeak
Peak Short Circuit Current
--
20
--
A
See figure 16 for definition
Vreset
Protection Reset Voltage
--
1.3
--
V
treset
Protection Reset Time
--
7
--
See figure 17 for definition
tTresp
OverTemperature Response Time
--
12
--
See figure 18 for definition
S
S
Protection Characteristics:
(Tc = 25 C unless otherwise specified.)
To Order
Next Data Sheet
Index
Previous Datasheet
IRSF3010
4
30
40
50
60
70
80
90
100
110
120
-50
-25
0
25
50
75
100
125
150
Temperature (C)
R
d
s
(
on)
(
m
O
h
m
)
Vin = 10V
Vin = 5V
Ids = 4A
40
50
60
70
80
90
100
110
120
2
4
6
8
10
12
14
16
18
Ids (A)
Rd
s
(
o
n
)
(
m
O
h
m
)
Vin = 4V
Vin = 5V
Vin = 7V
Vin = 10V
T = 25C
Fig. 3 - On Resistance vs Drain to Source Current
Fig. 4 - On Resistance vs. Temperature
13
14
15
16
17
4
5
6
7
8
9
10
Input Voltage (Volts)
S
hut
Down Cur
r
e
n
t
(
A
)
T = 25C
Fig. 5 - Over-current Shutdown Threshold vs
Input Voltage
10
11
12
13
14
15
16
-50
-25
0
25
50
75
100
125
150
Temperature (C)
S
hut
Down
Cur
r
en
t
(
A
)
Vin = 5V
Fig. 6 - Over-current Shutdown Threshold vs
Temperature
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
1
2
3
4
5
6
7
8
9
10
11
Input Voltage (Volts)
I
nput
Cur
r
ent
(
m
A
)
Iin,off
T=25C
Iin,on
Rating
0
500
1000
1500
2000
2500
3000
3500
0
25
50
75
100
125
150
Starting Junction Temperature (C)
S
i
ngle P
u
ls
e E
n
er
gy
t
o
F
a
i
l
ur
e
(
m
J
)
Ids = 12A
Ids = 8A
Vdd = 25V
Figure 7 - Input Current vs. Input Voltage
Fig. 8 - Unclamped Single Pulse Inductive Energy to
Failure vs Starting Junction Temperature
To Order
Next Data Sheet
Index
Previous Datasheet
IRSF3010
5
F ig. 9 - Tu rn on characteristics vs Input Voltag e
F ig. 10 - Turn on characteristics vs Temperature
Fig. 11 - T urn off characteristics vs Input Voltage
Fig. 12 - Turn off characteristics vs Temperature
Fig. 13 - Source-Drain Diode Forward Voltage
Fig. 14 - Tran sien t Thermal Impedan ce, Junction to Case
0.00
0.50
1.00
1.50
2.00
2.50
3
4
5
6
7
8
9
10
11
Input Voltage (Volts)
R
is
e
T
i
m
e
,
O
n
D
e
la
y
(
S)
On Delay
Rise Time
T = 25C
0.3
0.4
0.5
0.6
0.7
0.8
0.9
3
4
5
6
7
8
9
10
11
Input Voltage (Volts)
F
a
l
l
T
i
m
e
, O
ff D
e
l
a
y
(
S)
Off Delay
Fall Time
T = 25C
0.3
0.4
0.5
0.6
0.7
0.8
0.9
-50
-25
0
25
50
75
100
125
150
Temperature (C)
F
a
ll T
i
m
e
,
O
f
f
D
e
la
y
(
S)
Off Delay
Fall Time
Vin = 5V
1
10
100
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
Source to Drain Voltage (Volts)
R
eve
r
s
e
D
r
a
i
n
C
u
r
r
en
t
(
A
)
T = 25C
T = 150C
0.00
0.50
1.00
1.50
2.00
2.50
-50
-25
0
25
50
75
100
125
150
Temperature (C)
R
i
s
e
T
i
m
e
, O
n
D
e
l
a
y
(
S)
On Delay
Rise Time
Vin = 5V
0.01
0.1
1
10
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
Pulse Duration tp (S)
T
he
r
m
a
l
R
e
s
p
o
n
s
e
(
C
/
W
)
0.5
0.1
0
Duty Factor =
DF=
0.50
0.20
0.10
0.05
0.02
0.01
0.00
To Order
Next Data Sheet
Index
Previous Datasheet
PDF 
ZIP