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Features
Extremely Rugged for Harsh Operating Environments
Over-Temperature Protection
Over-Current Protection
Active Drain-to-Source Clamp
ESD Protection
Compatible with Standard Power MOSFET
Low Operating Input Current
Monolithic Construction
IRSF3011
FULLY PROTECTED POWER MOSFET SWITCH
Data Sheet No.PD 6.039B
Applications
Solenoid Driver
DC Motor Driver
Description
The IRSF3011 is a three-terminal monolithic Smart Power MOSFET
with built-in short circuit, over-temperature, ESD and over-voltage pro-
tections.
The on-chip protection circuit latches off the power MOSFET in case
the drain current exceeds 7A or the junction temperature exceeds 165C
and keeps it off until the input is driven low. The drain-to-source voltage
is actively clamped at 55V (typical), prior to the avalanche of POWER
MOSFET, thus improving its performance during turn-off with inductive
loads.
The input current requirements are very low (300A) which makes the
IRSF3011 compatible with most existing designs based on standard
power MOSFETs.
V
ds(clamp)
50V
R
ds(on)
200m
I
ds(sd)
5A
T
j(sd)
155C
E
AS
200mJ
Available Packages
IRSF3011L
(SOT-223)
IRSF3011
(TO-220AB)
IRSF3011 Block Diagram
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IRSF3011
2
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. (T
c
= 25C unless
otherwise specified.)
Minimum Maximum Units
Test Conditions
Vds, max Continuous Drain to Source Voltage
50
V
Vin, max Continuous Input Voltage
-0.3
10
Ids
Continuous Drain Current
self limited
Pd
Power Dissipation
30
W
Tc
25C
EAS
Unclamped Single Pulse Inductive Energy
200
mJ
Vesd1
Electrostatic Discharge Voltage (Human Body Model)
4000
V
1000pF. 1.5k
Vesd2
Electrostatic Discharge Voltage (Machine Model)
1000
200pF, 0
T
Jop
Operating Junction Temperature Range
-55
self-limited
T
Stg
Storage Temperature Range
-55
175
C
T
L
Lead Temperature (Soldering, 10 seconds)
300
Minimum Typical Maximum Units Test Conditions
V
ds,clamp
Drain to Source Clamp Voltage
50
54
V
I
ds
= 10mA
56
62
I
ds
= 6A, t
p
= 700 S
R
ds(on)
Drain to Source On Resistance
155
200
V
in
= 5V, I
ds
= 2A
200
m
V
in
= 4V, I
ds
= 2A
115
V
in
= 10V, I
ds
= 2A
I
dss
Drain to Source Leakage Current
10
V
ds
= 12V, V
in
= 0V
100
A
V
ds
= 50V, V
in
= 0V
10
250
V
ds
=40V,V
in
=0V,T
c
=150C
V
th
Input Threshold Voltage
1.5
2.0
2.5
V
V
ds
= 5V, I
ds
= 10mA
I
i,on
Input Supply Current (Normal Operation)
0.25
0.6
V
in
= 5V
0.35
0.85
mA
V
in
= 10V
I
i, off
Input Supply Current (Protection Mode)
0.5
1.0
V
in
= 5V
0.6
1.2
V
in
= 10V
V
in, clamp
Input Clamp Voltage
10
10.8
V
I
in
= 10mA
V
sd
Body-Drain Diode Forward Drop
1.2
1.5
I
ds
= -9A, R
in
= 1k
Static Electrical Characteristics
(T
c
= 25C unless otherwise specified.)
Minimum Typical Maximum Units Test Conditions
R
jc
Junction to Case
4
C/W TO-220AB
R
jA
Junction to Ambient
62
R
jc
Junction to PCB
40
C/W SOT-223
R
jA
Junction to PCB
60
Thermal Characteristics
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IRSF3011
3
Notes:
x When mounted on a 1" square PCB (FR-4 or G10 material). For recommended footprint and soldering techniques, refer
to International Rectifier Application Note AN-994.
y E
AS
is tested with a constant current source of 6A applied for 700S with V
in
= 0V and starting T
j
= 25C.
z Input current must be limited to less than 5mA with a 1k
resistor in series with the input when the Body-Drain Diode
is forward biased.
Minimum Typical Maximum Units Test Conditions
V
ds,clamp
Drain-to-Source Clamp Voltage T.C.
18.2
I
ds
= 10mA
V
th
Input Threshold Voltage T.C.
-2.7
mV/C V
ds
= 5V, I
ds
= 10mA
V
in,clamp
Input Clamp Voltage T.C.
7.0
I
in
= 10mA
I
ds(sd)
Over-Current Shutdown Threshold T.C.
-9.8
mA/C V
in
= 5V
Temperature Coefficients of Electrical Characteristics
(Please see Figures 3 through 14 for more data on thermal characteristics of other electrical parameters.
Minimum Typical Maximum Units Test Conditions
I
ds(sd)
Over-Current Shutdown Threshold
5
7
10
A
Vin = 5V
T
j(sd)
Over Temperature Shutdown Threshold
155
165
C
Vin = 5V, Ids = 2A
V
protect
Min. Input Voltage for Over-temp function
3
V
t
Iresp
Over Current Response Time
4
S
See Figure 16 for definition
t
Iblank
Over Current Blanking Time
4
See Figure 16 for definition
I
peak
Peak Short Circuit Current
16
A
See Figure 16 for definition
V
reset
Protection Reset Voltage
1.3
V
t
reset
Protection Reset Time
8
S
See Figure 17 for definition
t
Tresp
Over-Temperature Response Time
12
See Figure 18 for definition
Protection Characteristics
(T
C
= 25 C unless otherwise specified.)
Switching ElectricalCharacteristics
(V
CC
= 14V, Resistive Load (R
L
) = 5
, T
C
= 25C.) Please refer to Figure 15 for switching time definitions.
Minimum Typical Maximum Units Test Conditions
t
don
Turn-On Delay Time
160
250
V
in
= 5V
90
V
in
= 10V
t
r
Rise Time
650
1200
V
in
= 5V
250
nS
V
in
= 10V
t
doff
Turn-Off Delay Time
250
350
V
in
= 5V
300
V
in
= 10V
t
f
Fall Time
180
350
V
in
= 5V
170
V
in
= 10V
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IRSF3011
4
Figure 3 On Resistance vs.
Drain-to-Source Current
Figure 4 On Resistance vs. Temperature
Figure 5 Over-Current Shutdown Threshold vs.
Input Voltage
Figure 6 Over-Current Shutdown Threshold vs.
Temperature
Ids (A)
R
ds(on) (mOhm
)
100
125
150
175
200
225
250
1
2
3
4
5
6
7
8
Vin = 4V
Vin = 5V
Vin = 8V
Vin = 10V
T = 25C
Input Voltage (Volts)
S
hut Down Current (A
)
6
6.5
7
7.5
8
4
5
6
7
8
9
10
T = 25C
Fig. 4 - On Resistance vs. Temperature
Temperature (C)
R
ds(on) (mOhm
)
50
100
150
200
250
300
-50
-25
0
25
50
75
100
125
150
Vin = 10V
Ids = 4A
Vin = 5V
0
Temperature (C)
S
hut Down Current (A
)
4
5
6
7
8
9
-50
-25
0
25
50
75
100
125
150
Vin = 5V
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IRSF3011
5
Figure 7 Input Current vs. Input Voltage
Figure 8 Input Current vs.Temperature
Figure 9 Turn-On Characteristics vs. Input Voltage
Figure 10 Turn-On Characteristics vs. Temperature
Input Voltage (Volts)
I
nput Current (mA
)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
1
2
3
4
5
6
7
8
9
10 11
Iin,off
T=25C
Iin,on
Temperature (C)
I
nput Current (mA
)
0
0.1
0.2
0.3
0.4
0.5
0.6
-50
-25
0
25
50
75
100
125
150
Iin,on
Iin,off
Vin = 5V
Input Voltage (Volts)
R
ise Time, On Delay (S
)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
3
4
5
6
7
8
9
10
11
On Delay
Rise Time
T = 25C
Temperature (C)
R
ise Time, On Delay (S
)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
-50
-25
0
25
50
75
100
125
150
On Delay
Rise Time
Vin = 5V
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