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Электронный компонент: IRUH33P183A1M

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IRUH33P253A1M.pmd
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Ultra Low Dropout
IRUH33P253A1M
Positive Fixed Linear Regulator +3.3Vin to +2.5Vout at 3.0A
www.irf.com
1
Features:
n
Total dose to 1.0 Mrad (Si) and low dose
capability to 500 krad (Si) allows use in
space applications
n
Single Event latchup Immune
LET= 84 MeV/(mg/cm
2
)
Fluency = 1x10
9
ions/cm
2
n
Low noise, higher efficiency
n
Ultra low dropout voltage of 0.4V@ 3A out
significantly reduces power consumption
n
Remote shutdown permits power
sequencing to be easily implemented
n
Hermetic 8-lead flat pack ensures higher
reliability
n
Space Level Screened
n
This part is also available in MO-078 Package
as IRUH33P253B1M
The IRUH33P253A1M is a space qualified, ultra low
dropout linear regulator designed specifically for space
applications. This product has been characterized to a total
ionizing dose of 1.0 Mrad (Si) per MIL-STD-883, Method
1019, Condition D at both high and low dose rates under
biased and unbiased conditions to account for ELDRS
effects in bipolar devices. The ultra low dropout voltage of
0.4V @ 3A makes the part particularly useful for applications
requiring low noise and higher efficiency.
11/14/05
Absolute Maximum Ratings
Parameter
Symbol
Value
Units
Output Current
I
O
3.5
A
Input Voltage
V
in
7
V
Power Dissipation T
C
= 25C
P
TOT
19
W
Thermal Resistance, Junction to Case
R
THJC
6.5
C/W
Operating Temperature Range
T
J
-55 to +125
Storage Temperature Range
T
S
-65 to +150
C
Lead Temperature
T
L
300
8-LEAD FLAT PACK
Product Summary
Part Number
Dropout
I
O
V
in
V
out
IRUH33P253A1M
0.4V
3.0A
3.3V
2.5V
PD-97042
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IRUH33P253A1M
Refer page 3 for Notes for Electrical Characteristic Tables
Electrical Characteristics @T
a
= 25C (Unless Otherwise Specified)
Pre-Radiation
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Units
V
in
= 3.3V, I
O
= 1.5A
2.475
2.5
2.525
V
in
= 2.97V, I
O
= 50mA
2.375
-
2.625
V
in
= 2.97V, I
O
= 3.0A
2.375
-
2.625
V
in
= 3.63V, I
O
= 50mA
2.375
-
2.625
V
in
= 3.63V, I
O
= 3.0A
2.375
-
2.625
Input Voltage Range - Operating I
O
= 3.0A
V
in
2.9
-
6.5
Dropout Voltage
I
O
= 3.0A, V
out
= 2.5V
V
drop
--
-
0.4
Current Limit
V
in
= 3.3V, Overcurrent Latch Up
I
latch
3.0
-
-
A
Ripple Rejection
F = 120Hz, I
out
= 50mA
65
-
-
dB
Shutdown Source Current
V
shdn
= 5.0V
I
shdn
-
200
-
A
Shutdown Pin Threshold
c
V
in
= 3.3V
V
shdn
1.0
-
1.6
Output Voltage at Shutdown
V
in
= 3.3V, I
O
= 50mA, Vshdn = +5.0V
V
out (shdn)
-0.1
-
+0.1
V
V
V
out
Output Voltage
Electrical Characteristics @T
a
= -55C to 125C (Unless Otherwise Specified)
Pre-Radiation
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Units
V
in
= 3.3V, I
O
= 1.5A
2.375
2.5
2.625
V
in
= 2.97V, I
O
= 50mA
2.375
-
2.625
V
in
= 2.97V, I
O
= 3.0A
2.375
-
2.625
V
in
= 3.63V, I
O
= 50mA
2.375
-
2.625
V
in
= 3.63V, I
O
= 3.0A
2.375
-
2.625
Input Voltage Range - Operating I
O
= 3.0A
V
in
2.9
-
6.5
Dropout Voltage
I
O
= 3.0A, V
out
= 2.5V
V
drop
-
-
0.4
Current Limit
V
in
= 3.3V, Overcurrent Latch Up
I
latch
3.0
-
-
A
Ripple Rejection
F = 120Hz, I
out
= 50mA
65
-
-
dB
Shutdown Source Current
V
shdn
= 5.0V
I
shdn
-
200
-
A
Shutdown Pin Threshold
c
V
in
= 3.3V
V
shdn
1.0
-
1.6
Output Voltage at Shutdown
V
in
= 3.3V, I
O
= 50mA, Vshdn = +5.0V
V
out (shdn)
-0.1
-
+0.1
V
V
V
out
Output Voltage
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3
IRUH33P253A1M
Notes for Electrical Characteristic Tables
V
Shutdown
ramp from 0.8V to 4.8V, output monitored for a 100mV drop below the nominal specification for V
out
Pre-Radiation Characteristics
OMR9601 Ripple Rejection vs. Frequency
0
20
40
60
80
100
120
100
1,000
10,000
100,000
1,000,000
Frequency (Hz)
(
db)
3A
1.5A
.75A
.50A
Fig 1. Ripple Rejection Vs Frequency
Electrical Characteristics @T
a
= 25C (Unless Otherwise Specified)
Post-Radiation
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Units
V
in
= 3.3V, I
O
= 1.5A
2.375
-
2.625
V
in
= 2.97V, I
O
= 50mA
2.375
-
2.625
V
in
= 2.97V, I
O
= 3.0A
2.375
-
2.625
V
in
= 3.63V, I
O
= 50mA
2.375
-
2.625
V
in
= 3.63V, I
O
= 3.0A
2.375
-
2.625
Current Limit
V
in
= 3.3V
I
max
3.0
-
-
A
Ripple Rejection
F = 120Hz, I
out
= 50mA
40
-
-
dB
Output Voltage at Shutdown
V
in
= 3.3V, I
O
= 50mA, Vshdn = +5.0V
V
out (shdn)
-0.1
-
+0.1
V
V
V
out
Output Voltage
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4
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IRUH33P253A1M
Post-Radiation Characteristics
Fig 2. Voltage Output Vs Total Ionizing Dose
2.46
2.48
2.50
2.52
2.54
2.56
2.58
2.60
2.62
2.64
2.66
2.68
2.70
1
10
100
1000
Total Dose Le v e l (krads)
V
out (V
)
Test Data (Reg. Dr.)
no load @ 50 r/s, 25
0
C
Hybrid Regulator
Biased @ 90 r/s
25
0
C
Hybrid Regulator
Unbiased @90 r/s
25
0
C
Fig 3. Voltage Output Vs Total Ionizing Dose
Total Ionizing Dose (TID)
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5
IRUH33P253A1M
Post-Radiation Characteristics
Fig 4. Voltage Output Vs Total Ionizing Dose
Fig 5. Voltage Output Vs Time
Single Event Latch-up
Enhanced Low Dose Rate Sensitivity (Dose Rate = 0.1 Rad/s)