irf034
Absolute Maximum Ratings
Parameter
Units
ID @ VGS = -10V, TC = 25C
Continuous Drain Current
-4.0
ID @ VGS = -10V, TC = 100C Continuous Drain Current
-2.4
IDM
Pulsed Drain Current
-16
PD @ TC = 25C
Max. Power Dissipation
2 5
W
Linear Derating Factor
0.20
W/C
VGS
Gate-to-Source Voltage
20
V
EAS
Single Pulse Avalanche Energy
171
mJ
IAR
Avalanche Current
-
A
EAR
Repetitive Avalanche Energy
-
mJ
dv/dt
Peak Diode Recovery dv/dt
-1.1
V/ns
T J
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Pckg. Mounting Surface Temp.
300 (for 5 S)
Weight
0.42(typical)
g
PD - 91717B
The leadless chip carrier (LCC) package represents the
logical next step in the continual evolution of surface
mount technology. Desinged to be a close replacement
for the TO-39 package, the LCC will give designers the
extra flexibility they need to increase circuit board den-
sity. International Rectifier has engineered the LCC pack-
age to meet the specific needs of the power market by
increasing the size of the bottom source pad, thereby
enhancing the thermal and electrical performance. The
lid of the package is grounded to the source to reduce
RF interference.
o
C
A
01/17/01
www.irf.com
1
LCC-18
Product Summary
Part Number B
VDSS
R
DS(on)
I
D
IRFE9230 -200V 0.80
-4.0A
Features:
!
Surface Mount
!
Small Footprint
!
Alternative to TO-39 Package
!
Hermetically Sealed
!
Dynamic dv/dt Rating
!
Avalanche Energy Rating
!
Simple Drive Requirements
!
Light Weight
For footnotes refer to the last page
IRFE9230
REPETITIVE AVALANCHE AND dv/dt RATED
JANTX2N6851U
HEXFET
TRANSISTORS
JANTXV2N6851U
SURFACE MOUNT (LCC-18)
[REF:MIL-PRF-19500/564]
200V, P-CHANNEL
IRFE9230
2
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Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
RthJC
Junction to Case
--
--
5.0
RthJ-PCB
Junction to PC Board
--
-- 19" " " Soldered to a copper clad PC board
C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
--
--
-4.0
ISM
Pulse Source Current (Body Diode)
--
--
-16
VSD
Diode Forward Voltage
--
--
-5.6
V
T
j
= 25C, IS = -4.0A, VGS = 0V
trr
Reverse Recovery Time
--
--
400
nS
Tj = 25C, IF = -4.0A, di/dt
-100A/
s
QRR
Reverse Recovery Charge
--
--
4.0
c
VDD
-50V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics
@ Tj = 25C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
-200
--
--
V
VGS = 0V, ID = -1.0mA
BVDSS/
TJ Temperature Coefficient of Breakdown
--
-0.21
--
V/C
Reference to 25C, ID = -1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
--
--
0.80
VGS = -10V, ID = -2.4A
Resistance
--
-- 1.68
VGS = -10V, ID = -4.0A
VGS(th)
Gate Threshold Voltage
-2.0
-- -4.0 V VDS = VGS, ID = -250A
gfs
Forward Transconductance
2.2
--
--
S (
)
VDS > -15V, IDS = -2.4A
IDSS
Zero Gate Voltage Drain Current
--
--
-25
VDS= -160V, VGS= 0V
--
--
-250
VDS =-160V
VGS = 0V, TJ = 125C
IGSS
Gate-to-Source Leakage Forward
--
--
-100
VGS =-20V
IGSS
Gate-to-Source Leakage Reverse
--
--
100
VGS =20V
Qg
Total Gate Charge
--
--
3 5
VGS =-10V, ID= -4.0A
Qgs
Gate-to-Source Charge
--
--
6.1
nC
VDS =-100V
Qgd
Gate-to-Drain (`Miller') Charge
--
--
2 1
td
(on)
Turn-On Delay Time
--
--
5 0
VDD =-100V, ID = --4.0A,
t r
Rise Time
--
--
100
RG =7.5
td
(off)
Turn-Off Delay Time
--
--
8 0
tf
Fall Time
--
--
8 0
LS + LD
Total Inductance
--
6.1
--
Ciss
Input Capacitance
--
700
VGS = 0V, VDS = -25V
Coss
Output Capacitance
--
200
--
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
--
4 5
--
nA
nH
n s
A
Measured from the center of
drain pad to center of source
p a d
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3
IRFE9230
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
-10V
-4.0A
1
10
100
4
5
6
7
8
9
V = -50V
20s PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 150 C
J
0.1
1
10
100
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-4.5V
0.1
1
10
100
0.1
1
10
100
20s PULSE WIDTH
T = 150 C
J
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-4.5V
IRFE9230
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
0
200
400
600
800
1000
1200
1400
-V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
C
iss
C
oss
C
rss
0.1
1
10
100
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
J
C
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)
I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
0.1
1
10
100
1.0
2.0
3.0
4.0
5.0
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 150 C
J
0
5
10
15
20
25
30
35
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
-4.0 A
V
= 40V
DS
V
= 100V
DS
V
= 160V
DS
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5
IRFE9230
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
DS
-10V
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
0.0
1.0
2.0
3.0
4.0
T , Case Temperature ( C)
-I , Drain Current (A)
C
D
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