Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 12V, TC = 25°C

Continuous Drain Current

-6.5

ID @ VGS = 12V, TC = 100°C Continuous Drain Current

-4.1

IDM

Pulsed Drain Current

-26

PD @ TC = 25°C

Max. Power Dissipation

Linear Derating Factor

0.6

W/°C

VGS

Gate-to-Source Voltage

±20

EAS

Single Pulse Avalanche Energy

165

IAR

Avalanche Current

-6.5

EAR

Repetitive Avalanche Energy

7.5

dv/dt

Peak Diode Recovery dv/dt

-27

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Lead Temperature

300 (0.063in./1.6mm from case for 10s)

Weight

4.3 (Typical)

Pre-Irradiation

International Rectifier's RAD-Hard

HEXFET

MOSFET

technology provides high performance

power MOSFETs for space applications. This tech-
nology has over a decade of proven performance
and reliability in satellite applications. These de-
vices have been characterized for both Total Dose
and Single Event Effects (SEE). The combination
of low R

DS(on)

and low gate charge reduces the

power losses in switching applications such as DC
to DC converters and motor control. These de-
vices retain all of the well established advantages
of MOSFETs such as voltage control, fast switch-
ing, ease of paralleling and temperature stability
of electrical parameters.

12/05/00

www.irf.com

For footnotes refer to the last page

Features:

Single Event Effect (SEE) Hardened

Ultra Low R

DS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Light Weight

RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)

RAD-Hard

HEXFET

TECHNOLOGY

Product Summary

Part Number Radiation Level R

DS(on)

QPL Part Number

IRHY9230CM 100K Rads (Si) 0.8

-6.5A JANSR2N7383

IRHY93230CM 300K Rads (Si) 0.8

-6.5A JANSF2N7383

TO-257AA

IRHY9230CM

JANSR2N7383

200V, P-CHANNEL

REF: MIL-PRF-19500/615

PD-91401

IRHY9230CM, JANSR2N7383

Pre-Irradiation

www.irf.com

Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

-200

VGS = 0V, ID = -1.0mA

BVDSS/

TJ Temperature Coefficient of Breakdown

-0.27

V/°C

Reference to 25°C, ID = -1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

0.8

VGS = -12V, ID = -4.1A

Resistance

VGS(th)

Gate Threshold Voltage

-2.0

-4.0

VDS = VGS, ID = -1.0mA

gfs

Forward Transconductance

2.0

S (

)

VDS > -15V, IDS = -4.1A

IDSS

Zero Gate Voltage Drain Current

-25

VDS= -160V ,VGS=0V

-250

VDS = -160V,

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

-100

VGS = -20V

IGSS

Gate-to-Source Leakage Reverse

100

VGS = 20V

Total Gate Charge

VGS =-12V, ID = -6.5A

Qgs

Gate-to-Source Charge

VDS = -100V

Qgd

Gate-to-Drain (`Miller') Charge

(on)

Turn-On Delay Time

VDD = -100V, ID = -6.5A

Rise Time

RG = 7.5

(off)

Turn-Off Delay Time

Fall Time

LS + LD

Total Inductance

6.8

Measured from Drain lead (6mm /0.25in.

from package) to Source lead (6mm /0.25in.

from package) with Source wires internally

bonded from Source Pin to Drain Pad

Ciss

Input Capacitance

1360

VGS = 0V, VDS = -25V

Coss

Output Capacitance

190

f = 1.0MHz

Crss

Reverse Transfer Capacitance

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

-6.5

ISM

Pulse Source Current (Body Diode)

-26

VSD

Diode Forward Voltage

-5.0

= 25°C, IS = -6.5A, VGS = 0V

trr

Reverse Recovery Time

400

Tj = 25°C, IF = -6.5A, di/dt

100A/

QRR Reverse Recovery Charge

3.4

VDD

-25V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

1.67

RthJA

Junction-to-Ambient

°C/W

Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page

www.irf.com

IRHY9230CM, JANSR2N7383

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

Parameter

100K Rads(Si)

300K Rads (Si)

Units

Test Conditions

Min

Max Min Max

DSS

Drain-to-Source Breakdown Voltage -200 -- -200 -- V V

= 0V, I

= -1.0mA

GS(th)

Gate Threshold Voltage

-2.0 -4.0 -2.0 -5.0 V

= V

, I

= -1.0mA

GSS

Gate-to-Source Leakage Forward

-- -100 -- -100 nA

= -20V

GSS

Gate-to-Source Leakage Reverse

-- 100 -- 100

= 20 V

DSS

Zero Gate Voltage Drain Current

-- - 25 -- -25 µA V

= -160V, V

=0V

DS(on)

Static Drain-to-Source

-- 0.804 -- 0.804

= -12V, I

=-4.1A

On-State Resistance (TO-3)

DS(on)

Static Drain-to-Source

-- 0.8 -- 0.8

= -12V, I

= -4.1A

On-State Resistance (TO-257AA)

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.

1. Part number IRHY9230CM
2. Part number IRHY93230CM

Diode Forward Voltage

-5.0 -- -5.0 V V

= 0V, IS = -6.5A

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Radiation Characteristics

Fig a. Single Event Effect, Safe Operating Area

For footnotes refer to the last page

Table 2. Single Event Effect Safe Operating Area

Ion

LET

Energy Range

(V)

MeV/(mg/cm

)) (MeV) (µm) @V

=0V @V

=5V @V

=10V @V

=15V @V

=20V

28.0

285 43.0 -200 -200 -200 -200 --

36.8

305 39.0 -200 -200 -125 -75 --

-250

-200

-150

-100

-50

VGS

VDS

IRHY9230CM, JANSR2N7383

Pre-Irradiation

www.irf.com

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

100

20µs PULSE WIDTH
T = 25 C

TOP

BOTTOM

VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
-5.0V

-V , Drain-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

-5.0V

100

20µs PULSE WIDTH
T = 150 C

TOP

BOTTOM

VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
-5.0V

-V , Drain-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

-5.0V

100

5.0

6.0

7.0

8.0

9.0

10.0

V = -50V
20µs PULSE WIDTH

-V , Gate-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

T = 25 C

T = 150 C

-60 -40 -20

80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

I =

-12V

-6.5A

www.irf.com

IRHY9230CM, JANSR2N7383

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Pre-Irradiation

100

500

1000

1500

2000

2500

-V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

V
C
C
C

=
=
=
=

0V,
C
C
C

f = 1MHz

+ C

C SHORTED

GS
iss

gd ,

rss

oss

iss

oss

rss

Q , Total Gate Charge (nC)

-V , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

SEE FIGURE

I =

-6.5A

= -40V

= -100V

= -160V

0.1

100

0.0

1.0

2.0

3.0

4.0

5.0

-V ,Source-to-Drain Voltage (V)

-I , Reverse Drain Current (A)

V = 0 V

T = 25 C

T = 150 C

0.1

100

1000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

Single Pulse

= 150 C

= 25 C

-V , Drain-to-Source Voltage (V)

-I , Drain Current (A)
I , Drain Current (A)

100us

1ms

10ms

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