IRHE9130.pmd

Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 12V, TC = 25°C

Continuous Drain Current

-6.5

ID @ VGS = 12V, TC = 100°C Continuous Drain Current

-4.1

IDM

Pulsed Drain Current

-26

PD @ TC = 25°C

Max. Power Dissipation

Linear Derating Factor

0.2

W/°C

VGS

Gate-to-Source Voltage

±20

EAS

Single Pulse Avalanche Energy

165

IAR

Avalanche Current

-6.5

EAR

Repetitive Avalanche Energy

2.5

dv/dt

Peak Diode Recovery dv/dt

-22

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Pckg. Mounting Surface Temp.

300 ( for 5s)

Weight

0.42 (Typical)

PD - 90881C

Pre-Irradiation

International Rectifier's RAD-Hard

HEXFET

MOSFET

technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low Rdson and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.

RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-18)

2/20/03

www.irf.com

Product Summary

Part Number Radiation Level R

DS(on)

QPL Part Number

IRHE9130 100K Rads (Si)

0.30

-6.5A

JANSR2N7389U

IRHE93130 300K Rads (Si)

0.30

-6.5A

JANSF2N7389U

Features:

Single Event Effect (SEE) Hardened

Low R

DS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Surface Mount

Light Weight

For footnotes refer to the last page

LCC - 18

IRHE9130

100V, P-CHANNEL

REF: MIL-PRF-19500/630

RAD-Hard

HEXFET

MOSFET TECHNOLOGY

IRHE9130

Pre-Irradiation

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Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

-100

VGS =0 V, ID = -1.0mA

BVDSS/

TJ Temperature Coefficient of Breakdown

-0.112

V/°C

Reference to 25°C, ID = -1.0mA

Voltage

RDS(on)

Static Drain-to-Source

0.30

VGS = -12V, ID = -4.1A

On-State Resistance

0.35

VGS = -12V, ID = -6.5A

VGS(th)

Gate Threshold Voltage

-2.0

-4.0

VDS = VGS, ID = -1.0mA

gfs

Forward Transconductance

2.5

S (

)

VDS > -15V, IDS = -4.1A

IDSS

Zero Gate Voltage Drain Current

-25

VDS= -80V,VGS=0V

-250

VDS = -80V

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

-100

VGS = -20V

IGSS

Gate-to-Source Leakage Reverse

100

VGS = 20V

Total Gate Charge

VGS = -12V, ID = -6.5A

Qgs

Gate-to-Source Charge

VDS = -50V

Qgd

Gate-to-Drain (`Miller') Charge

(on)

Turn-On Delay Time

VDD = -50V, ID = -6.5A,

Rise Time

VGS = -12V, RG = 7.5

(off)

Turn-Off Delay Time

Fall Time

LS + LD

Total Inductance

6.1

Ciss

Input Capacitance

1200

VGS = 0V, VDS = -25V

Coss

Output Capacitance

290

f = 1.0MHz

Crss

Reverse Transfer Capacitance

Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

5.0

RthJPCB

Junction-to-PC Board

Solder to a copper clad PC Board

°C/W

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ

Max Units

Test Conditions

Continuous Source Current (Body Diode)

-6.5

ISM

Pulse Source Current (Body Diode)

-26

VSD

Diode Forward Voltage

-3.0

= 25°C, IS = -6.5A, VGS = 0V

trr

Reverse Recovery Time

250

Tj = 25°C, IF = -6.5A, di/dt

-100A/

QRR Reverse Recovery Charge

0.74

µC

VDD

-25V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Measured from the center of
drain pad to center of source pad

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Pre-Irradiation

IRHE9130

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

Parameter

100K Rads(Si)

300K Rads (Si)

Units

Test Conditions

Min Max Min Max
BV

DSS

Drain-to-Source Breakdown Voltage -100 -- -100 -- V V

= 0V, I

= -1.0mA

GS(th)

Gate Threshold Voltage

- 2.0 - 4.0 -2.0 -5.0

= V

, I

= -1.0mA

GSS

Gate-to-Source Leakage Forward

-- -100 -- -100 nA

= -20V

GSS

Gate-to-Source Leakage Reverse

-- 100 -- 100

= 20 V

DSS

Zero Gate Voltage Drain Current

-- -25 -- -25 µA V

=-80V, V

=0V

DS(on)

Static Drain-to-Source

-- 0.259 -- 0.259

= -12V, I

=-4.1A

On-State Resistance (TO-3)

DS(on)

Static Drain-to-Source

-- 0.30 -- 0.30

= -12V, I

=-4.1A

On-State Resistance (LCC-18)

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.

Radiation Characteristics

1. Part number IRHE9130 (JANSR2N7389U)
2. Part number IRHE93130 (JANSF2N7389U)

Fig a. Single Event Effect, Safe Operating Area

Diode Forward Voltage

-- -3.0 -- -3.0 V

= 0V, IS = -6.5A

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

-120

-100

-80

-60

-40

-20

VGS

VDS

Table 2. Single Event Effect Safe Operating Area

Ion

LET

Energy Range

DS(V)

MeV/(mg/cm

)) (MeV) (µm) @

=0V @

=5V @

=10V @

=15V @

=20V

285 43 -100 -100 -100 -70 -60

36.8

305 39 -100 -100 -70 -50 -40

59.8

343 32.6 -60 -- -- -- --

IRHE9130

Pre-Irradiation

www.irf.com

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

100

20µs PULSE WIDTH
T = 25 C

TOP

BOTTOM

VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
-5.0V

-V , Drain-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

-5.0V

100

20µs PULSE WIDTH
T = 150 C

TOP

BOTTOM

VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
-5.0V

-V , Drain-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

-5.0V

-60 -40 -20

80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

I =

-12V

-6.5A

100

V = -50V
20µs PULSE WIDTH

-V , Gate-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

T = 25 C

T = 150 C

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Pre-Irradiation

IRHE9130

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

100

500

1000

1500

2000

-V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

V
C
C
C

=
=
=
=

0V,
C
C
C

f = 1MHz

+ C

C SHORTED

GS
iss

gd ,

rss

oss

iss

oss

rss

0.1

100

0.2

1.0

1.8

2.6

3.4

4.2

-V ,Source-to-Drain Voltage (V)

-I , Reverse Drain Current (A)

V = 0 V

T = 25 C

T = 150 C

Q , Total Gate Charge (nC)

-V , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

SEE FIGURE

I =

-6.5

=-20V

=-50V

=-80V

0.1

100

1000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

Single Pulse

= 150 C

= 25 C

-V , Drain-to-Source Voltage (V)

-I , Drain Current (A)
I , Drain Current (A)

100us

1ms

10ms

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