IRHN9150.pmd
Absolute Maximum Ratings
Parameter
Units
ID @ VGS = -12V, TC = 25C
Continuous Drain Current
-22
ID @ VGS = -12V, TC = 100C Continuous Drain Current
-14
I D M
Pulsed Drain Current
-88
PD @ TC = 25C
Max. Power Dissipation
150
W
Linear Derating Factor
1.2
W/C
VGS
Gate-to-Source Voltage
20
V
EAS
Single Pulse Avalanche Energy
500
mJ
IAR
Avalanche Current
-22
A
EAR
Repetitive Avalanche Energy
15
mJ
dv/dt
Peak Diode Recovery dv/dt
-23
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
PCKG Mounting Surface Temp.
300 ( for 5s)
Weight
2.6 (typical)
g
PD - 90885E
Pre-Irradiation
International Rectifier's RADHard HEXFET
TM
technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
o
C
A
RADIATION HARDENED
JANSR2N7422U
POWER MOSFET
100V, P-CHANNEL
SURFACE MOUNT (SMD-1)
REF: MIL-PRF-19500/662
RAD Hard
TM
HEXFET
T
ECHNOLOGY
02/20/03
www.irf.com
1
SMD-1
Product Summary
Part Number Radiation Level R
DS(on)
I
D
QPL Part Number
IRHN9150 100K Rads (Si)
0.080
-22A
JANSR2N7422U
IRHN93150 300K Rads (Si)
0.080
-22A
JANSF2N7422U
Features:
n
Single Event Effect (SEE) Hardened
n
Low R
DS(on)
n
Low Total Gate Charge
n
Proton Tolerant
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Surface Mount
n
Ceramic Package
n
Light Weight
For footnotes refer to the last page
IRHN9150
IRHN9150, JANSR2N7422U
Pre-Irradiation
2
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Electrical Characteristics
@ Tj = 25C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
-100
--
--
V
VGS = 0V, ID =-1.0mA
BVDSS/
TJ
Temperature Coefficient of Breakdown
--
-0.093
--
V/C
Reference to 25C, ID = -1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
--
--
0.080
VGS = -12V, ID = -14A
Resistance -- -- 0.085
VGS = -12V, ID = -22A
VGS(th)
Gate Threshold Voltage
-2.0
--
-4.0
V
VDS = VGS, ID = -1.0mA
gfs
Forward Transconductance
11
--
--
S (
)
VDS >-15V, IDS = -14A
IDSS
Zero Gate Voltage Drain Current
--
--
-25
VDS= -80V ,VGS=0V
--
--
-250
VDS = -80V,
VGS = 0V, TJ = 125C
IGSS
Gate-to-Source Leakage Forward
--
--
-100
VGS = -20V
IGSS
Gate-to-Source Leakage Reverse
--
--
100
VGS = 20V
Qg
Total Gate Charge
--
--
200
VGS =-12V, ID = -22A
Qgs
Gate-to-Source Charge
--
--
35
nC
VDS = -50V
Qgd
Gate-to-Drain (`Miller') Charge
--
--
48
td
(on)
Turn-On Delay Time
--
--
40
VDD = -50V, ID = -22A,
tr
Rise Time
--
--
170
VGS =-12V, RG = 2.35
td
(off)
Turn-Off Delay Time
--
--
190
tf
Fall Time
--
--
190
LS + LD
Total Inductance
--
4.0
--
Ciss
Input Capacitance
--
4300
--
VGS = 0V, VDS = -25V
Coss
Output Capacitance
--
1100
--
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
--
310
--
nA
nH
ns
A
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
--
--
0.83
RthJ-PCB
Junction-to-PC board
--
6.6
--
soldered to a 1"sq. copper-clad board
C/W
Measured from the center of
drain pad to center of source pad
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
--
--
-22
ISM
Pulse Source Current (Body Diode)
--
--
-88
VSD
Diode Forward Voltage
--
--
-3.0
V
T
j
= 25C, IS = -22A, VGS = 0V
trr
Reverse Recovery Time
--
--
300
nS
Tj = 25C, IF = -22A, di/dt
-100A/
s
QRR
Reverse Recovery Charge
--
--
1.5
C
VDD
-50V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
www.irf.com
3
Pre-Irradiation
IRHN9150, JANSR2N7422U
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
100K Rads(Si)
1
300K Rads (Si)
2
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage -100 -- -100 -- V V
GS
= 0V, I
D
= -1.0mA
V
GS(th)
Gate Threshold Voltage
-2.0 -4.0 -2.0 -5.0 V
GS
= V
DS
, I
D
= -1.0mA
I
GSS
Gate-to-Source Leakage Forward
-- -100 -- -100 nA
V
GS
= -20V
I
GSS
Gate-to-Source Leakage Reverse
-- 100 -- 100
V
GS
= 20 V
I
DSS
Zero Gate Voltage Drain Current
-- -25 -- -25 A
V
DS
=-80V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
-- 0.081 -- 0.081
V
GS
= -12V, I
D
=-14A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
-- 0.080 -- 0.080
V
GS
= -12V, I
D
=-14A
On-State Resistance (SMD-1)
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
1. Part number IRHN9150 (JANSR2N7422U)
2. Part numbers IRHN93150 (JANSF2N7422U)
Fig a. Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
For footnotes refer to the last page
V
SD
Diode Forward Voltage
-- -3.0 -- - 3.0 V V
GS
= 0V, IS = -22A
-120
-100
-80
-60
-40
-20
0
0
5
10
15
20
VGS
VDS
Cu
Br
I
IRHN9150, JANSR2N7422U
Pre-Irradiation
4
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
10
100
5
6
7
8
9
10
V = -50V
20s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 150 C
J
10
100
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
-5.0V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-5.0V
10
100
1
10
100
20s PULSE WIDTH
T = 150 C
J
TOP
BOTTOM
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
-5.0V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-5.0V
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
-12V
-22A
-
-
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5
Pre-Irradiation
IRHN9150, JANSR2N7422U
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
0
1000
2000
3000
4000
5000
6000
7000
-V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
C
iss
C
oss
C
rss
0
40
80
120
160
200
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
-22A
V
= -20V
DS
V
= -50V
DS
V
= -80V
DS
1
10
100
0.0
1.0
2.0
3.0
4.0
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 150 C
J
1
10
100
1000
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
J
C
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)
I , Drain Current (A)
DS
D
100us
1ms
10ms