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Absolute Maximum Ratings

Parameter

Units

ID @ VGS = -12V, TC = 25°C

Continuous Drain Current

-29

ID @ VGS = -12V, TC = 100°C

Continuous Drain Current

-18

IDM

Pulsed Drain Current

-116

PD @ TC = 25°C

Max. Power Dissipation

300

Linear Derating Factor

2.4

W/°C

VGS

Gate-to-Source Voltage

±20

EAS

Single Pulse Avalanche Energy

500

IAR

Avalanche Current

-29

EAR

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

-20

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Pckg. Mounting Surface Temp.

300 (for 5s)

Weight

3.3 (Typical)

Pre-Irradiation

International Rectifier's RAD-Hard

HEXFET

MOSFET

technology provides high performance

power MOSFETs for space applications. This tech-
nology has over a decade of proven performance
and reliability in satellite applications. These de-
vices have been characterized for both Total Dose
and Single Event Effects (SEE). The combination
of low R

DS(on)

and low gate charge reduces the

power losses in switching applications such as DC
to DC converters and motor control. These de-
vices retain all of the well established advantages
of MOSFETs such as voltage control, fast switch-
ing, ease of paralleling and temperature stability
of electrical parameters.

RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)

11/21/00

www.irf.com

For footnotes refer to the last page

Product Summary

Part Number Radiation Level R

DS(on)

QPL Part Number

IRHNA9260 100K Rads (Si) 0.154

-29A

JANSR2N7426U

IRHNA93260 300K Rads (Si) 0.154

-29A

JANSF2N7426U

SMD-2

Features:

Single Event Effect (SEE) Hardened

Ultra Low R

DS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

IRHNA9260

JANSR2N7426U

200V, P-CHANNEL

REF: MIL-PRF-19500/655

RAD-Hard

HEXFET

TECHNOLOGY

PD - 93969

IRHNA9260, JANSR2N7426U

Pre-Irradiation

www.irf.com

Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

-29

ISM

Pulse Source Current (Body Diode)

-116

VSD

Diode Forward Voltage

-3.0

= 25°C, IS = -29A, VGS = 0V

trr

Reverse Recovery Time

738

Tj = 25°C, IF = -29A, di/dt

-100A/

QRR

Reverse Recovery Charge

VDD

-50V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

0.42

RthJ-PCB

Junction-to-PC board

1.6

soldered to a 2" square copper-clad board

°C/W

Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min

Typ

Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

-200

VGS = 0V, ID = -1.0mA

BVDSS/

TJ Temperature Coefficient of Breakdown

-0.27

V/°C

Reference to 25°C, ID = -1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

0.154

VGS = -12V, ID = -18A

Resistance

0.159

VGS = -12V, ID = -29A

VGS(th)

Gate Threshold Voltage

-2.0

-4.0

VDS = VGS, ID = -1.0mA

gfs

Forward Transconductance

S (

)

VDS > -15V, IDS = -18A

IDSS

Zero Gate Voltage Drain Current

-25

VDS= -160V ,VGS=0V

-250

VDS = -160V,

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

-100

VGS = -20V

IGSS

Gate-to-Source Leakage Reverse

100

VGS = 20V

Total Gate Charge

300

VGS = -12V, ID = -29A

Qgs

Gate-to-Source Charge

VDS = -100V

Qgd

Gate-to-Drain (`Miller') Charge

(on)

Turn-On Delay Time

VDD = -100V, ID = -29A

Rise Time

141

RG = 2.35

(off)

Turn-Off Delay Time

148

Fall Time

220

LS + LD

Total Inductance

4.0

Ciss

Input Capacitance

6143

VGS = 0V, VDS = -25V

Coss

Output Capacitance

915

f = 1.0MHz

Crss

Reverse Transfer Capacitance

159

Measured from the center of

drain pad to center of source pad

www.irf.com

IRHNA9260, JANSR2N7426U

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

Parameter

100K Rads(Si)

300K Rads (Si)

Units

Test Conditions

Min Max Min Max

DSS

Drain-to-Source Breakdown Voltage -200 -- -200 -- V V

= 0V, I

= -1.0mA

GS(th)

Gate Threshold Voltage

-2.0 -4.0 -2.0 -5.0 V

= V

, I

= -1.0mA

GSS

Gate-to-Source Leakage Forward

-- -100 -- -100 nA

= -20V

GSS

Gate-to-Source Leakage Reverse

-- 100 -- 100

= 20 V

DSS

Zero Gate Voltage Drain Current

-- - 25 -- -25 µA V

= -160V, V

=0V

DS(on)

Static Drain-to-Source

-- 0.155 -- 0.161

= -12V, I

=-18A

On-State Resistance (TO-3)

DS(on)

Static Drain-to-Source

-- 0.154 -- 0.160

= -12V, I

= -18A

On-State Resistance (SMD-2)

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.

1. Part number IRHNA9260
2. Part number IRHNA93260

Fig a. Single Event Effect, Safe Operating Area

Diode Forward Voltage

-3.0 -- -3.0 V V

= 0V, IS = -29A

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

Radiation Characteristics

Table 2. Single Event Effect Safe Operating Area

Ion

LET

Energy Range

(V)

MeV/(mg/cm

)) (MeV) (µm) @V

=0V @V

=5V @V

=10V @V

=15V @V

=20V

28.0

285 43.0 -200 -200 -200 -200 --

36.8

305 39.0 -200 -200 -125 -75 --

-250

-200

-150

-100

-50

VGS

VDS

IRHNA9260, JANSR2N7426U

Pre-Irradiation

www.irf.com

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

100

1000

100

20µs PULSE WIDTH
T = 25 C

TOP

BOTTOM

VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
-5.0V

-V , Drain-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

-5.0V

100

1000

100

20µs PULSE WIDTH
T = 150 C

TOP

BOTTOM

VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
-5.0V

-V , Drain-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

-5.0V

100

1000

5.0

6.0

7.0

8.0

9.0

10.0

V = -50V
20µs PULSE WIDTH

-V , Gate-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

-60 -40 -20

80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

I =

-12V

-29A

www.irf.com

IRHNA9260, JANSR2N7426U

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Pre-Irradiation

100

2000

4000

6000

8000

10000

-V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

V
C
C
C

=
=
=
=

0V,
C
C
C

f = 1MHz

+ C

C SHORTED

GS
iss

gd ,

rss

oss

iss

oss

rss

100

150

200

250

300

350

Q , Total Gate Charge (nC)

-V , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

SEE FIGURE

I =

-29A

= 40V

= 100V

= 160V

0.1

100

1000

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

-V ,Source-to-Drain Voltage (V)

-I , Reverse Drain Current (A)

V = 0 V

T = 25 C

T = 150 C

100

1000

-VDS , Drain-toSource Voltage (V)

100

1000

-I

, Drain-to-Source Current (A)

Tc = 25°C
Tj = 150°C
Single Pulse

1ms

0ms

OPERATION IN THIS AREA
LIMITED BY R DS(on)

100µs

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