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Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 12V, TC = 25°C

Continuous Drain Current

22*

ID @ VGS = 12V, TC = 100°C Continuous Drain Current

IDM

Pulsed Drain Current

PD @ TC = 25°C

Max. Power Dissipation

Linear Derating Factor

0.6

W/°C

VGS

Gate-to-Source Voltage

±20

EAS

Single Pulse Avalanche Energy

100

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

7.5

dv/dt

Peak Diode Recovery dv/dt

V/ns

Operating Junction

-55 to 150

TSTG

Storage Temperature Range
Pckg. Mounting Surface Temp.

300 (for 5s)

Weight

1.0 (Typical)

Pre-Irradiation

International Rectifier's R5

technology provides

high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm

)). The combination

of low Rdson and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.

RADIATION HARDENED JANSR2N7480U3
POWER MOSFET 60V, N-CHANNEL
SURFACE MOUNT (SMD-0.5)

REF: MIL-PRF-19500/703

06/16/04

www.irf.com

* Current is limited by package

Product Summary

Part Number Radiation Level R

DS(on)

QPL Part Number

IRHNJ57034 100K Rads (Si) 0.030

22A* JANSR2N7480U3

IRHNJ53034 300K Rads (Si) 0.030

22A* JANSF2N7480U3

IRHNJ54034 600K Rads (Si) 0.030

22A* JANSG2N7480U3

IRHNJ58034 1000K Rads (Si) 0.038

22A* JANSH2N7480U3

Features:

Single Event Effect (SEE) Hardened

Ultra low R

DS(on)

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

For footnotes refer to the last page

SMD-0.5

IRHNJ57034

TECHNOLOGY

PD-93752C

IRHNJ57034, JANSR2N7480U3

Pre-Irradiation

www.irf.com

Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

VGS = 0V, ID = 1.0mA

BVDSS/TJ Temperature Coefficient of Breakdown

0.057

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

0.03

VGS = 12V, ID = 21A

Resistance

VGS(th)

Gate Threshold Voltage

2.0

4.0

VDS = VGS, ID = 1.0mA

gfs

Forward Transconductance

S (

)

VDS > =15V, IDS = 21A Ã

IDSS

Zero Gate Voltage Drain Current

VDS=48V ,VGS=0V

VDS = 48V,

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

-100

VGS = -20V

Total Gate Charge

VGS =12V, ID = 22A

Qgs

Gate-to-Source Charge

VDS = 30V

Qgd

Gate-to-Drain (`Miller') Charge

(on)

Turn-On Delay Time

VDD = 30V, ID = 22A,

Rise Time

100

VGS =12V, RG = 7.5

(off)

Turn-Off Delay Time

Fall Time

LS + LD

Total Inductance

4.0

Ciss

Input Capacitance

1152

VGS = 0V, VDS = 25V

Coss

Output Capacitance

535

f = 1.0MHz

Crss

Reverse Transfer Capacitance

µA

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

RthJC

Junction-to-Case

1.67

RthJ-PCB

Junction-to-PC board

6.9

soldered to a 2" square copper-clad board

°C/W

Measured from the center of

drain pad to center of source pad

Note: Corresponding Spice and Saber models are available on International Rectifier Web site
For footnotes refer to the last page

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

22*

ISM

Pulse Source Current (Body Diode)

VSD Diode Forward Voltage

1.2

= 25°C, IS = 22A, VGS = 0V Ã

trr

Reverse Recovery Time

125

Tj = 25°C, IF = 22A, di/dt 100A/µs

QRR Reverse Recovery Charge

322

VDD 25V Ã

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

* Current is limited by package

www.irf.com

Pre-Irradiation

IRHNJ57034, JANSR2N7480U3

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

ÄÅ

Parameter

Up to 600K Rads(Si)

1000K Rads (Si)

Units

Test Conditions

Min Max Min Max
BV

DSS

Drain-to-Source Breakdown Voltage 60 -- 60 -- V V

= 0V, I

= 1.0mA

GS(th)

Gate Threshold Voltage

2.0 4.0 1.5 4.0

= V

, I

= 1.0mA

GSS

Gate-to-Source Leakage Forward

-- 100 -- 100 nA

= 20V

GSS

Gate-to-Source Leakage Reverse

-- -100 -- -100

= -20 V

DSS

Zero Gate Voltage Drain Current

-- 10 -- 25 µA V

=48V, V

=0V

DS(on)

Static Drain-to-Source

-- 0.034 -- 0.043

= 12V, I

= 21A

On-State Resistance (TO-3)

DS(on)

Static Drain-to-Source

-- 0.03 -- 0.038

= 12V, I

= 21A

On-State Resistance (SMD-.5)

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Radiation Characteristics

1. Part numbers IRHNJ57034 ( JANSR2N7480U3 ), IRHNJ53034 ( JANSF2N7480U3 ) and IRHNJ54034 ( JANSG2N7480U3 )
2. Part number IRHNJ58034 ( JANSH2N7480U3 )

Fig a. Single Event Effect, Safe Operating Area

Diode Forward Voltage

-- 1.2 -- 1.2 V

= 0V, IS = 22A

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

Ion

LET

Energy Range

(V)

MeV/(mg/cm

)) (MeV) (µm) @V

=0V @V

=-5V @V

=-10V @V

=-15V @V

=-20V

37.3

285 36.8 60 60 60 60 40

300 29 46 46 35 25 15

86.6

2068 106 35 35 27

20 14

Table 2. Single Event Effect Safe Operating Area

-20

-15

-10

-5

VGS

VDS

Br
Xe
Au

IRHNJ57034, JANSR2N7480U3

Pre-Irradiation

www.irf.com

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

0.1

100

1000

0.1

100

20µs PULSE WIDTH

T = 25 C

TOP

BOTTOM

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

5.0V

V , Drain-to-Source Voltage (V)

I , D

r
a
i
n
-
to

-S

o
u
r
c
e
C

u
rre

n
t
(A

)

5.0V

100

1000

0.1

100

20µs PULSE WIDTH

T = 150 C

TOP

BOTTOM

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

5.0V

V , Drain-to-Source Voltage (V)

I , D

r
a
i
n
-
to

-S

o
u
r
c
e
C

u
rre

n
t
(A

)

5.0V

100

1000

V = 25V
20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

T = 25 C

T = 150 C

-60 -40 -20 0

20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature( C)

, D

r
a
i
n
-
to

-S

o
u
r
ce

n
R

e
sista

n
c
e

(
N

mal

i
z
ed)

(on)

I =

12V

22A

www.irf.com

Pre-Irradiation

IRHNJ57034, JANSR2N7480U3

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

100

500

1000

1500

2000

2500

V , Drain-to-Source Voltage (V)

Capaci

t
ance (

pF)

0V,

f = 1MHz

+ C

C SHORTED

GS
iss

gd ,

rss

oss

rss

oss

iss

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

SEE FIGURE

I =

22A

= 12V

= 30V

= 48V

0.1

100

0.4

0.6

0.8

1.0

1.2

1.4

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

T = 25 C

T = 150 C

100

1000

VDS , Drain-toSource Voltage (V)

100

1000

I D

,

D

r
a
i
n
-
t
o
-
S

o
u
r
c
e

C

u
r
r
e
n
t

(
A

)

Tc = 25°C

Tj = 150°C

Single Pulse

1ms

10ms

OPERATION IN THIS AREA

LIMITED BY RDS(on)

100µs

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