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Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 12V, TC = 25°C

Continuous Drain Current

ID @ VGS = 12V, TC = 100°C Continuous Drain Current

IDM

Pulsed Drain Current

104

PD @ TC = 25°C

Max. Power Dissipation

150

Linear Derating Factor

1.2

W/°C

VGS

Gate-to-Source Voltage

±20

EAS

Single Pulse Avalanche Energy

500

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

5.0

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Package Mounting Surface Temperature

300 for 5 sec)

Weight

2.6 (Typical )

Pre-Irradiation

International Rectifier's RADHard HEXFET

technol-

ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.

RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT(SMD-1)

12/17/01

www.irf.com

Product Summary

Part Number Radiation Level

DS(on)

QPL Part Number

IRHN7250

100K Rads (Si)

0.1

26A

JANSR2N7269U

IRHN3250

300K Rads (Si)

0.1

26A

JANSF2N7269U

IRHN4250

600K Rads (Si)

0.1

26A

JANSG2N7269U

IRHN8250

1000K Rads (Si) 0.1

26A

JANSH2N7269U

For footnotes refer to the last page

IRHN7250

JANSR2N7269U

200V, N-CHANNEL

REF:MIL-PRF-19500/603

RAD-Hard

HEXFET

TECHNOLOGY

SMD-1

Features:

Single Event Effect (SEE) Hardened

Low R

DS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

PD - 90679F

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IRHN7250

Pre-Irradiation

Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

ISM

Pulse Source Current (Body Diode)

104

VSD

Diode Forward Voltage

1.4

= 25°C, IS = 26A, VGS = 0V

trr

Reverse Recovery Time

820

Tj = 25°C, IF = 26A, di/dt

100A/

QRR Reverse Recovery Charge

µC

VDD

25V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

0.83

RthJ-PCB

Junction-to-PC board

6.6

-- Soldered to a 1 inch square clad PC board

Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

200

VGS = 0V, ID = 1.0mA

BVDSS/

TJ Temperature Coefficient of Breakdown

0.27

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

0.10

VGS = 12V, ID =16A

Resistance

0.11

VGS = 12V, ID = 26A

VGS(th)

Gate Threshold Voltage

2.0

4.0

VDS = VGS, ID = 1.0mA

gfs

Forward Transconductance

8.0

S (

)

VDS > 15V, IDS = 16A

IDSS

Zero Gate Voltage Drain Current

VDS= 160V ,VGS=0V

250

VDS = 160V,

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

-100

VGS = -20V

Total Gate Charge

170

VGS =12V, ID =26A

Qgs

Gate-to-Source Charge

VDS = 100V

Qgd

Gate-to-Drain (`Miller') Charge

(on)

Turn-On Delay Time

VDD = 100V, ID =26A

Rise Time

140

VGS =12V, RG = 2.35

(off)

Turn-Off Delay Time

140

Fall Time

140

LS + LD

Total Inductance

4.0

Ciss

Input Capacitance

4700

VGS = 0V, VDS = 25V

Coss

Output Capacitance

850

f = 1.0MHz

Crss

Reverse Transfer Capacitance

210

Measured from the center of

drain pad to center of source pad

°C/W

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Pre-Irradiation

IRHN7250

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

Parameter

100 K Rads(Si)

300 - 1000K Rads (Si)

Units

Test Conditions

Min Max Min Max
BV

DSS

Drain-to-Source Breakdown Voltage 200 -- 200 -- V V

= 0V, I

= 1.0mA

GS(th)

Gate Threshold Voltage

2.0 4.0 1.25 4.5

= V

, I

= 1.0mA

GSS

Gate-to-Source Leakage Forward

-- 100 -- 100 nA

= 20V

GSS

Gate-to-Source Leakage Reverse

-- -100 -- -100

= -20 V

DSS

Zero Gate Voltage Drain Current

-- 25 -- 50 µA V

=160V, V

=0V

DS(on)

Static Drain-to-Source

-- 0.100 -- 0.155

= 12V, I

=16A

On-State Resistance (TO-3)

DS(on)

Static Drain-to-Source

-- 0.100 -- 0.155

= 12V, I

=16A

On-State Resistance (SMD-1)

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.

Radiation Characteristics

1. Part number IRHN7250 (JANSR2N7269U)
2. Part numbers IRHN3250, IRHN4250 and IRHN8250 (JANSF2N7269U, JANSG2N7269U and JANSH2N7269U)

Fig a. Single Event Effect, Safe Operating Area

Diode Forward Voltage

-- 1.4 -- 1.4 V

= 0V, IS = 26A

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

Table 2. Single Event Effect Safe Operating Area

100

150

200

-5

-10

-15

-20

VGS

VDS

)

(

)

(

)

(

)

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