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Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 12V, TC = 25°C Continuous Drain Current

8.0

ID @ VGS = 12V, TC = 100°C Continuous Drain Current

5.0

IDM

Pulsed Drain Current

PD @ TC = 25°C

Max. Power Dissipation

Linear Derating Factor

0.20

W/°C

VGS

Gate-to-Source Voltage

±20

EAS

Single Pulse Avalanche Energy

130

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

5.5

V/ns

Operating Junction

-55 to 150

TSTG

Storage Temperature Range
Package Mounting Surface Temperature

300 ( for 5s)

Weight

0.42 (Typical )

Pre-Irradiation

International Rectifiers RADHard HEXFET

technol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for both Total Dose and Single Event Effects (SEE).

The combination of low Rdson and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

RADIATION HARDENED

POWER MOSFET

SURFCACE MOUNT(LCC-18)

7/3/01

www.irf.com

Product Summary

Part Number Radiation Level

Part Number Radiation Level R

DS(on)

QPL Part Number

IRHE7130 100K Rads (Si) 0.18

8.0A JANSR2N7261U

IRHE3130 300K Rads (Si) 0.18

8.0A JANSF2N7261U

IRHE4130 600K Rads (Si) 0.18

8.0A JANSG2N7261U

IRHE8130 1000K Rads (Si) 0.18

8.0A JANSH2N7261U

For footnotes refer to the last page

IRHE7130

JANSR2N7261U

100V, N-CHANNEL

REF: MIL-PRF-19500/601

RAD Hard

HEXFET

TECHNOLOGY

LCC-18

Features:

Single Event Effect (SEE) Hardened

Low R

DS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Light Weight

PD - 91806B

www.irf.com

IRHE7130

Pre-Irradiation

Note: Corresponding Spice and Saber models are available on the G&S Website.

Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page

Source-Drain Diode Ratings and Characteristics

Parameter

Min

Min Typ

Typ

Typ Max

Max

Max Units

Units

Test Conditions

Continuous Source Current (Body Diode)

8.0

ISM

Pulse Source Current (Body Diode)

VSD Diode Forward Voltage

1.5

= 25°C, IS = 8.0A, VGS = 0V

trr

Reverse Recovery Time

350

Tj = 25°C, IF = 8.0A, di/dt

100A/

QRR Reverse Recovery Charge

3.0

µC

VDD

50V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Thermal Resistance

Parameter

Min

Min Typ

Typ

Typ Max

Max

Max Units

Units

Test Conditions

RthJC

Junction-to-Case

5.0

RthJ-PCB

Junction-to-PC Board

°C/W

Soldered to a copper clad PC board

Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min

Typ

Typ Max

Max

Max Units

Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

100

VGS = 0V, ID = 1.0mA

BVDSS/

TJ Temperature Coefficient of Breakdown

0.10

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

0.18

VGS = 12V, ID =5.0A

Resistance

0.185

VGS = 12V, ID = 8.0A

VGS(th)

Gate Threshold Voltage

2.0

4.0

VDS = VGS, ID = 1.0mA

gfs

Forward Transconductance

2.5

S (

)

VDS > 15V, IDS = 5.0A

IDSS

Zero Gate Voltage Drain Current

VDS= 80V ,VGS=0V

250

VDS = 80V,

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

-100

VGS = -20V

Total Gate Charge

VGS =12V, ID =8.0A

Qgs

Gate-to-Source Charge

VDS = 50V

Qgd

Gate-to-Drain (Miller) Charge

(on)

Turn-On Delay Time

VDD = 50V, ID =8.0A

Rise Time

VGS =12V, RG = 7.5

(off)

Turn-Off Delay Time

Fall Time

LS + LD

Total Inductance

6.1

Measured from the center of drain

pad to center of source pad

Ciss

Input Capacitance

1100

VGS = 0V, VDS = 25V

Coss

Output Capacitance

310

f = 1.0MHz

Crss

Reverse Transfer Capacitance

www.irf.com

Pre-Irradiation

IRHE7130

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

Parameter

100K Rads(Si)

300 - 1000K Rads (Si)

Units

nits

Test Conditions

Min

Min Max

Max

Max Min Max

Min Max

DSS

Drain-to-Source Breakdown Voltage 100 100 V V

= 0V, I

= 1.0mA

/5JD

Gate Threshold Voltage

2.0 4.0 1.25 4.5

= V

, I

= 1.0mA

GSS

Gate-to-Source Leakage Forward

100 100 nA

= 20V

GSS

Gate-to-Source Leakage Reverse

-100 -100

= -20 V

DSS

Zero Gate Voltage Drain Current

25 50 µA V

=80V, V

=0V

DS(on)

Static Drain-to-Source"

0.18 0.24

= 12V, I

=5.0A

On-State Resistance (TO-3)

DS(on)

Static Drain-to-Source"

0.18 0.24

= 12V, I

=5.0A

On-State Resistance (LCC-18)

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Radiation Characteristics

1. Part numbers IRHE7130, (JANSR2N7261U)
2. Part number IRHE8130,I RHE3130, and IRHE4130(JANSF2N7261U, JANSG2N7261U, JANSH2N7261U)

Fig a.

Fig a. Single Event Effect, Safe Operating Area

Diode Forward Voltage"

1.5 1.5 V V

= 0V, IS = 8.0A

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

Table 2. Single Event Effect Safe Operating Area

Ion

LET

Energy Range

DS(V)

MeV/(mg/cm

)) (MeV) (µm) @

V
V

=0V @

=-5V@

=-10V@

V
V

=-15V@

=-20V

285 43 100 100 100 80 60

36.8

305 39 100 90 70 50

100

120

-5

-10

-15

-20

-25

VGS

VDS

Cu
Br

www.irf.com

Pre-Irradiation

IRHE7130

Post-Irradiation

Fig 6.

Fig 6. Typical On-State Resistance Vs.

Neutron Fluence Level

Fig 5.

Fig 5. Typical Zero Gate Voltage Drain

Current Vs. Total Dose Exposure

Fig 7.

Fig 7. Typical Transient Response

of Rad Hard HEXFET During 1x10

Rad (Si)/Sec Exposure

Fig 8b.

Fig 8b. V

DSS

Stress Equals

80% of B

VDSS

During Radiation

Fig 8a.

Fig 8a. Gate Stress of

GSS

Equals 12 Volts During

Radiation

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