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Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 12V, TC = 25°C

Continuous Drain Current

75*

ID @ VGS = 12V, TC = 100°C Continuous Drain Current

75*

IDM

Pulsed Drain Current

300

PD @ TC = 25°C

Max. Power Dissipation

250

Linear Derating Factor

2.0

W/°C

VGS

Gate-to-Source Voltage

±20

EAS

Single Pulse Avalanche Energy

500

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

0.83

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Pckg. Mounting Surface Temp.

300 (for 5s)

Weight

3.3 (Typical)

Pre-Irradiation

International Rectifier's R5

technology provides

high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm

)). The combination

of low

RDS(on)

and low gate charge reduces the

power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.

RADIATION HARDENED JANSR2N7467U2
POWER MOSFET 30V, N-CHANNEL
SURFACE MOUNT (SMD-2)

REF: MIL-PRF-19500/683

04/24/06

www.irf.com

* Current is limited by package

SMD-2

Product Summary

Part Number Radiation Level R

DS(on)

QPL Part Number

IRHNA57Z60 100K Rads (Si) 0.0035

75A* JANSR2N7467U2

IRHNA53Z60 300K Rads (Si) 0.0035

75A*

JANSF2N7467U2

IRHNA54Z60 500K Rads (Si) 0.0035

75A*

JANSG2N7467U2

IRHNA58Z60 1000K Rads (Si) 0.0040

75A*

JANSH2N7467U2

Features:

Single Event Effect (SEE) Hardened

Ultra Low R

DS(on)

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

For footnotes refer to the last page

IRHNA57Z60

TECHNOLOGY

PD - 91787H

IRHNA57Z60, JANSR2N7467U2

Pre-Irradiation

www.irf.com

Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

VGS = 0V, ID = 1.0mA

BVDSS/

TJ Temperature Coefficient of Breakdown

0.026

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

0.0035

VGS = 12V, ID = 75A

Resistance

VGS(th)

Gate Threshold Voltage

2.0

4.0

VDS = VGS, ID = 1.0mA

gfs

Forward Transconductance

S (

)

VDS

15V, IDS = 45A

IDSS

Zero Gate Voltage Drain Current

VDS= 24V ,VGS=0V

VDS = 24V,

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

-100

VGS = -20V

Total Gate Charge

200

VGS =12V, ID = 45A

Qgs

Gate-to-Source Charge

VDS = 15V

Qgd

Gate-to-Drain (`Miller') Charge

(on)

Turn-On Delay Time

VDD = 15V, ID = 45A,

Rise Time

125

VGS =12V, RG = 2.35

(off)

Turn-Off Delay Time

Fall Time

LS + LD

Total Inductance

4.0

Ciss

Input Capacitance

9110

VGS = 0V, VDS = 25V

Coss

Output Capacitance

4620

f = 1.0MHz

Crss

Reverse Transfer Capacitance

150

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

0.5

RthJ-PCB

Junction-to-PC board

1.6

soldered to a 2" square copper-clad board

°C/W

Measured from the center of

drain pad to center of source pad

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ

Max Units

Test Conditions

Continuous Source Current (Body Diode)

75*

ISM

Pulse Source Current (Body Diode)

300

VSD

Diode Forward Voltage

1.3

= 25°C, IS = 75A, VGS = 0V

trr

Reverse Recovery Time

165

Tj = 25°C, IF = 45A, di/dt

100A/

QRR Reverse Recovery Charge

690

VDD

25V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page

* Current is limited by package

www.irf.com

IRHNA57Z60, JANSR2N7467U2

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

ÄÅ

Parameter

Up to 500K Rads(Si)

1000K Rads (Si)

Units

Test Conditions

Min Max Min Max
BV

DSS

Drain-to-Source Breakdown Voltage 30 -- 30 -- V V

= 0V, I

= 1.0mA

GS(th)

Gate Threshold Voltage

2.0 4.0 1.5 4.0

= V

, I

= 1.0mA

GSS

Gate-to-Source Leakage Forward

-- 100 -- 100 nA

= 20V

GSS

Gate-to-Source Leakage Reverse

-- -100 -- -100

= -20 V

DSS

Zero Gate Voltage Drain Current

-- 10 -- 25 µA

=24V, V

=0V

DS(on)

Static Drain-to-Source

-- 0.004 -- 0.0045

= 12V, I

=45A

On-State Resistance (TO-3)

DS(on)

Static Drain-to-Source

-- 0.0035 -- 0.004

= 12V, I

=45A

On-State Resistance (SMD-2)

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.

Radiation Characteristics

1. Part numbers IRHNA57Z60 (JANSR2N7467U2), IRHNA53Z60 (JANSF2N7467U2) and IRHNA54Z60 (JANSG2N7467U2)
2. Part number IRHNA58Z60 (JANSH2N7467U2)

Fig a. Single Event Effect, Safe Operating Area

Diode Forward Voltage

-- 1.3 -- 1.3 V

= 0V, IS = 45A

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

Table 2. Single Event Effect Safe Operating Area

Ion

LET

Energy Range

(V)

(MeV/(mg/cm

)) (MeV) (µm) @V

=0V @V

=-5V @V

=-10V @V

=-15V @V

=-20V

261 40 30 30 30 25 15

285 37 30 30 30 23 15

344 33 25 25 20

-20

-15

-10

-5

VGS

VDS

IRHNA57Z60, JANSR2N7467U2

Pre-Irradiation

www.irf.com

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

100

1000

0.1

100

20µs PULSE WIDTH
T = 25 C

TOP

BOTTOM

VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V

V , Drain-to-Source Voltage (V)

I , D

r
ain-to-Source C

rrent (A)

5.0V

100

1000

0.1

100

20µs PULSE WIDTH
T = 150 C

TOP

BOTTOM

VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V

V , Drain-to-Source Voltage (V)

I , D

r
a

i
n

-
to

-S

r
ce

rre

t
(A

)

5.0V

100

1000

5.0

5.5

6.0

6.5

7.0

7.5

8.0

V = 50V
20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

T = 25 C

T = 150 C

-60 -40 -20

80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

(
on)

I =

10V

45A

75 A

25V

12V

www.irf.com

IRHNA57Z60, JANSR2N7467U2

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

0.1

100

1000

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

T = 25 C

T = 150 C

100

125

150

175

200

225

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

SEE FIGURE

I =

45 A

= 15V

= 24V

100

5000

10000

15000

20000

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

V
C
C
C

=
=
=
=

0V,
C
C
C

f = 1MHz

+ C

C SHORTED

GS
iss

gd ,

rss

oss

iss

rss

Pre-Irradiation

0.1

100

VDS , Drain-toSource Voltage (V)

100

1000

I D

,

D

r
a

i
n

-
t
o

-
S

r
c

r
r
e

t

(
A

)

Tc = 25°C
Tj = 150°C
Single Pulse

1ms

10ms

OPERATION IN THIS AREA
LIMITED BY R DS(on)

100µs

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