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Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 12V, TC = 25°C Continuous Drain Current

ID @ VGS = 12V, TC = 100°C Continuous Drain Current

IDM

Pulsed Drain Current

136

PD @ TC = 25°C

Max. Power Dissipation

150

Linear Derating Factor

1.2

W/°C

VGS

Gate-to-Source Voltage

±20

EAS

Single Pulse Avalanche Energy

500

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

5.5

V/ns

Operating Junction

-55 to 150

TSTG

Storage Temperature Range
Lead Temperature

300 (0.063 in. (1.6mm) from case for 10s)

Weight

9.3 (Typical)

PD - 90675C

Pre-Irradiation

International Rectifiers RADHard HEXFET

technol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for both Total Dose and Single Event Effects (SEE).

The combination of low Rdson and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-254AA)

8/14/01

www.irf.com

IRHM7150

JANSR2N7268

100V, N-CHANNEL

REF: MIL-PRF-19500/603

RAD Hard

HEXFET

TECHNOLOGY

Product Summary

Part Number Radiation Level

Part Number Radiation Level R

DS(on)

II
II
I

QPL Part Number

IRHM7150 100K Rads (Si) 0.065

34A

JANSR2N7268

IRHM3150 300K Rads (Si) 0.065

34A

JANSF2N7268

IRHM4150 600K Rads (Si) 0.065

34A

JANSG2N7268

IRHM8150 1000K Rads (Si) 0.065

34A

JANSH2N7268

Features:

Single Event Effect (SEE) Hardened

Low R

DS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Eyelets

Light Weight

For footnotes refer to the last page

TO-254AA

www.irf.com

IRHM7150

Pre-Irradiation

Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min

Typ

Typ Max

Max

Max Units

Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

100

VGS =0 V, ID = 1.0mA

BVDSS/

TJ Temperature Coefficient of Breakdown

0.13

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source

0.065

VGS = 12V, ID = 21A

On-State Resistance

0.076

VGS = 12V, ID = 34A

VGS(th)

Gate Threshold Voltage

2.0

4.0

VDS = VGS, ID = 1.0mA

gfs

Forward Transconductance

8.0

S (

)

VDS > 15V, IDS = 21A "

IDSS

Zero Gate Voltage Drain Current

VDS= 80V,VGS=0V

250

VDS = 80V

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

-100

VGS = -20V

Total Gate Charge

160

VGS = 12V, ID = 34A

Qgs

Gate-to-Source Charge

VDS = 50V

Qgd

Gate-to-Drain (Miller) Charge

(on)

Turn-On Delay Time

VDD = 50V, ID = 14A,

Rise Time

190

VGS = 12V, RG = 2.35

(off)

Turn-Off Delay Time

170

Fall Time

130

LS + LD

Total Inductance

6.8

Ciss

Input Capacitance

4300

VGS = 0V, VDS = 25V

Coss

Output Capacitance

1200

f = 1.0MHz

Crss

Reverse Transfer Capacitance

200

Note: Corresponding Spice and Saber models are available on the G&S Website.

Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page

Thermal Resistance

Parameter

Min

Min Typ

Typ

Typ Max

Max

Max Units

Units

Test Conditions

RthJC

Junction-to-Case

0.83

RthCS

Case-to-sink

0.21

RthJA

Junction-to-Ambient

Typical socket mount

°C/W

Source-Drain Diode Ratings and Characteristics

Parameter

Min

Min Typ

Typ

Typ Max

Max

Max Units

Units

Test Conditions

Continuous Source Current (Body Diode)

ISM

Pulse Source Current (Body Diode)

136

VSD Diode Forward Voltage

1.4

= 25°C, IS = 34A, VGS = 0V

trr

Reverse Recovery Time

570

Tj = 25°C, IF = 34A, di/dt

100A/

QRR Reverse Recovery Charge

5.8

µC

VDD

50V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)

www.irf.com

Pre-Irradiation

IRHM7150

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

Parameter

100K Rads(Si)

300 to 1000K Rads (Si)

U
U

U
Units

nits

Test Conditions

Min

Min Max

Max

Max Min Max

Min Max

DSS

Drain-to-Source Breakdown Voltage 100 100 V V

= 0V, I

= 1.0mA

/5JD

Gate Threshold Voltage#

2.0 4.0 1.25 4.5

= V

, I

= 1.0mA

GSS

Gate-to-Source Leakage Forward

100 100 nA

= 20V

GSS

Gate-to-Source Leakage Reverse

-100 -100

= -20 V

DSS

Zero Gate Voltage Drain Current

25 50 µA V

=80V, V

=0V

DS(on)

Static Drain-to-Source#

0.065 0.09

= 12V, I

=21A

On-State Resistance (TO-3)

DS(on)

Static Drain-to-Source#

0.065 0.09

= 12V, I

=21A

On-State Resistance (TO-254AA)

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Radiation Characteristics

1. Part number IRHM7150 (JANSR2N7268)
2. Part numbers IRHM3150 (JANSF2N7268), IRHM4150 (JANSG2N7268) and IRHM8150 (JANSH2N7268)

Fig a.

Fig a. Single Event Effect, Safe Operating Area

Diode Forward Voltage#

1.4 1.4 V V

= 0V, IS = 34A

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

Table 2. Single Event Effect Safe Operating Area

Ion LET

Energy Range

VDS(V)

MeV/(mg/cm

)) (MeV) (µm) @VGS=0V@VGS=-5V@VGS=-10V @VGS=-15V @VGS=-20V @VGS=-25V

@VGS=0V@VGS=-5V@VGS=-10V @VGS=-15V @VGS=-20V @VGS=-25V

285 43 100 100 100 80 60

36.8

305 39 100 90 70 50

100

120

-5

-10

-15

-20

-25

VGS

VDS

Cu
Br

www.irf.com

Pre-Irradiation

IRHM7150

Post-Irradiation

Fig 6.

Fig 6. Typical On-State Resistance Vs.

Neutron Fluence Level

Fig 5.

Fig 5. Typical Zero Gate Voltage Drain

Current Vs. Total Dose Exposure

Fig 8b.

Fig 8b. V

DSS

Stress Equals

80% of B

VDSS

During Radiation

Fig 7.

Fig 7. Typical Transient Response of

Rad Hard HEXFET During 1x10

Rad (Si)/Sec Exposure

Fig 8a.

Fig 8a. Gate Stress of V

GSS

Equals 12 Volts During

Radiation

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