IRHNA9160.pmd

Absolute Maximum Ratings

Parameter

Units

ID @ VGS = -12V, TC = 25°C

Continuous Drain Current

-38

ID @ VGS = -12V, TC = 100°C Continuous Drain Current

-24

I D M

Pulsed Drain Current

-152

PD @ TC = 25°C

Max. Power Dissipation

300

Linear Derating Factor

2.4

W/°C

VGS

Gate-to-Source Voltage

±20

EAS

Single Pulse Avalanche Energy

500

IAR

Avalanche Current

-38

EAR

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

-17

V/ns

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

PCKG Mounting Surface Temp.

300 (for 5s)

Weight

3.3(typical)

PD - 91433C

Pre-Irradiation

International Rectifier's RADHard HEXFET

technol-

ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.

RADIATION HARDENED

JANSR2N7425U

POWER MOSFET

100V, P-CHANNEL

SURFACE MOUNT (SMD-2)

REF: MIL-PRF-19500/655

RAD Hard

HEXFET

ECHNOLOGY

02/20/03

www.irf.com

SMD-2

Product Summary

Part Number Radiation Level R

DS(on)

QPL Part Number

IRHNA9160 100K Rads (Si)

0.068

-38A

JANSR2N7425U

IRHNA93160 300K Rads (Si)

0.068

-38A

JANSF2N7425U

Features:

Single Event Effect (SEE) Hardened

Low R

DS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

For footnotes refer to the last page

IRHNA9160

IRHNA9160, JANSR2N7425U

Pre-Irradiation

www.irf.com

Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

-100

VGS = 0V, ID =-1.0mA

BVDSS/

Temperature Coefficient of Breakdown

-0.11

V/°C

Reference to 25°C, ID = -1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

0.068

VGS = -12V, ID = -24A

Resistance -- -- 0.071

VGS = -12V, ID = -38A

VGS(th)

Gate Threshold Voltage

-2.0

-4.0

VDS = VGS, ID = -1.0mA

gfs

Forward Transconductance

S (

)

VDS >-15V, IDS = -24A

IDSS

Zero Gate Voltage Drain Current

-25

VDS= -80V ,VGS=0V

-250

VDS = -80V,

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

-100

VGS = -20V

IGSS

Gate-to-Source Leakage Reverse

100

VGS = 20V

Total Gate Charge

290

VGS =-12V, ID = -38A

Qgs

Gate-to-Source Charge

VDS = -50V

Qgd

Gate-to-Drain (`Miller') Charge

(on)

Turn-On Delay Time

VDD = -50V, ID = -38A,

Rise Time

170

VGS =-12V, RG = 2.35

(off)

Turn-Off Delay Time

190

Fall Time

190

LS + LD

Total Inductance

4.0

Ciss

Input Capacitance

6000

VGS = 0V, VDS = -25V

Coss

Output Capacitance

1500

f = 1.0MHz

Crss

Reverse Transfer Capacitance

400

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

0.42

RthJ-PCB

Junction-to-PC board

1.6

soldered to a 1"square copper-clad board

°C/W

Measured from the center of

drain pad to center of source pad

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ

Max Units

Test Conditions

Continuous Source Current (Body Diode)

-38

ISM

Pulse Source Current (Body Diode)

-152

VSD

Diode Forward Voltage

-3.3

= 25°C, IS = -38A, VGS = 0V

trr

Reverse Recovery Time

300

Tj = 25°C, IF = -38A, di/dt

-100A/

QRR

Reverse Recovery Charge

2.1

µC

VDD

-50V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page

www.irf.com

Pre-Irradiation

IRHNA9160, JANSR2N7425U

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

Parameter

100K Rads(Si)

300 K Rads (Si

)

Units

Test Conditions

Min Max Min Max
BV

DSS

Drain-to-Source Breakdown Voltage -100 -- -100 -- V V

= 0V, I

= -1.0mA

GS(th)

Gate Threshold Voltage

-2.0 -4.0 -2.0 -5.0 V

= V

, I

= -1.0mA

GSS

Gate-to-Source Leakage Forward

-- -100 -- -100 nA

= -20V

GSS

Gate-to-Source Leakage Reverse

-- 100 -- 100

= 20 V

DSS

Zero Gate Voltage Drain Current

-- -25 -- -25 µA V

=-80V, V

=0V

DS(on)

Static Drain-to-Source

-- 0.069 -- 0.069

= -12V, I

=-24A

On-State Resistance (TO-3)

DS(on)

Static Drain-to-Source

-- 0.068 -- 0.068

= -12V, I

=-24A

On-State Resistance (SMD-2)

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.

Radiation Characteristics

1. Part number IRHNA9160 (JANSR2N7425U)
2. Part numbers IRHNA93160 (JANSF2N7425U)

Fig a. Single Event Effect, Safe Operating Area

Diode Forward Voltage

-- -3.3 -- - 3.3 V V

= 0V, IS = -38A

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Single Event Effect Safe Operating Area

For footnotes refer to the last page

Ion

LET

Energy Range

(V)

MeV/(mg/cm

)) (MeV) (µm) @V

=0V @V

=5V @V

=10V @V

=15V @V

=20V

36.8

305 39 -100 -100 -70 -50 -40

59.8

343 32.6 -60 -- -- -- --

285 43 -100 -100 -100

-70 -60

-120

-100

-80

-60

-40

-20

VGS

VDS

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

100

1000

100

20µs PULSE WIDTH
T = 25 C

TOP

BOTTOM

VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
-5.0V

-V , Drain-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

-5.0V

100

1000

100

20µs PULSE WIDTH
T = 150 C

TOP

BOTTOM

VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
-5.0V

-V , Drain-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

-5.0V

-60 -40 -20

80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

I =

-10V

-38A

100

1000

V = -50V
20µs PULSE WIDTH

-V , Gate-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

T = 25 C

T = 150 C

IRHNA9160, JANSR2N7425U

Pre-Irradiation

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

100

2000

4000

6000

8000

10000

-V , Drain-to-Source Voltage (V)

apac

i
tance

(
p

V
C
C
C

=
=
=
=

0V,
C
C
C

f = 1MHz

+ C

C SHORTED

GS
iss

gd ,

rss

oss

iss

oss

rss

0.1

100

1000

0.0

1.0

2.0

3.0

4.0

-V ,Source-to-Drain Voltage (V)

-I , Reverse Drain Current (A)

V = 0 V

T = 150 C

T = 25 C

100

1000

100

1000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

Single Pulse

= 150 C

= 25 C

-V , Drain-to-Source Voltage (V)

-I , Drain Current (A)
I , Drain Current (A)

100us

1ms

10ms

100

150

200

250

300

Q , Total Gate Charge (nC)

-V , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

SEE FIGURE

I =

-38 A

= 20V

= 50V

= 80V

Pre-Irradiation

IRHNA9160, JANSR2N7425U

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