Absolute Maximum Ratings

Parameter

Units

ID @ VGS = -12V, TC = 25°C

Continuous Drain Current

-27

ID @ VGS = -12V, TC = 100°C Continuous Drain Current

-17

IDM

Pulsed Drain Current

-108

PD @ TC = 25°C

Max. Power Dissipation

250

Linear Derating Factor

2.0

W/°C

VGS

Gate-to-Source Voltage

±20

EAS

Single Pulse Avalanche Energy

500

IAR

Avalanche Current

-27

EAR

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

-9.0

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Lead Temperature

300 (0.063in./1.6mm from case for 10s)

Weight

9.3 (Typical)

Pre-Irradiation

International Rectifier's RAD-Hard

HEXFET

MOSFET

technology provides high performance

power MOSFETs for space applications. This tech-
nology has over a decade of proven performance
and reliability in satellite applications. These de-
vices have been characterized for both Total Dose
and Single Event Effects (SEE). The combination
of low R

DS(on)

and low gate charge reduces the

power losses in switching applications such as DC
to DC converters and motor control. These de-
vices retain all of the well established advantages
of MOSFETs such as voltage control, fast switch-
ing, ease of paralleling and temperature stability
of electrical parameters.

RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)

11/27/00

www.irf.com

For footnotes refer to the last page

RAD-Hard

HEXFET

TECHNOLOGY

Product Summary

Part Number Radiation Level R

DS(on)

QPL Part Number

IRHM9260 100K Rads (Si) 0.160

-27A

JANSR2N7426

IRHM93260 300K Rads (Si) 0.160

-27A

JANSF2N7426

TO-254AA

Features:

Single Event Effect (SEE) Hardened

Neutron Tolerant

Identical Pre- and Post-Electrical Test Conditions

Repetitive Avalanche Ratings

Dynamic dv/dt Ratings

Simple Drive Requirements

Ease of Paralleling

Hermatically Sealed

Electically Isolated

Ceramic Eyelets

Light Weight

IRHM9260

JANSR2N7426

200V, P-CHANNEL

REF: MIL-PRF-19500/660

PD - 93858

IRHM9260, JANSR2N7426

Pre-Irradiation

www.irf.com

Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

-200

VGS = 0V, ID = -1.0mA

BVDSS/

TJ Temperature Coefficient of Breakdown

-0.28

V/°C

Reference to 25°C, ID = -1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

0.160

VGS = -12V, ID = -17A

Resistance

VGS(th)

Gate Threshold Voltage

-2.0

-4.0

VDS = VGS, ID = -1.0mA

gfs

Forward Transconductance

S (

)

VDS > -15V, IDS = -17A

IDSS

Zero Gate Voltage Drain Current

-25

VDS= -160V ,VGS=0V

-250

VDS = -160V,

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

-100

VGS = -20V

IGSS

Gate-to-Source Leakage Reverse

100

VGS = 20V

Total Gate Charge

300

VGS =-12V, ID = -27A

Qgs

Gate-to-Source Charge

VDS = -100V

Qgd

Gate-to-Drain (`Miller') Charge

(on)

Turn-On Delay Time

VDD = -100V, ID = -27A

Rise Time

RG = 2.35

(off)

Turn-Off Delay Time

140

Fall Time

172

LS + LD

Total Inductance

6.8

Measured from Drain lead (6mm /0.25in.

from package) to Source lead (6mm /0.25in.

from package) with Source wires internally

bonded from Source Pin to Drain Pad

Ciss

Input Capacitance

6220

VGS = 0V, VDS = -25V

Coss

Output Capacitance

903

f = 1.0MHz

Crss

Reverse Transfer Capacitance

150

Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

0.50

RthCS

Case-to-Sink

0.21

°C/W

RthJA

Junction-to-Ambient

Typical socket mount

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

-27

ISM

Pulse Source Current (Body Diode)

-108

VSD

Diode Forward Voltage

-3.3

= 25°C, IS = -27A, VGS = 0V

trr

Reverse Recovery Time

600

Tj = 25°C, IF = -27A, di/dt

100A/

QRR Reverse Recovery Charge

VDD

-50V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

www.irf.com

IRHM9260, JANSR2N7426

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

Parameter

100K Rads(Si)

300K Rads (Si)

Units

Test Conditions

Min Max Min Max

DSS

Drain-to-Source Breakdown Voltage -200 -- -200 -- V V

= 0V, I

= -1.0mA

GS(th)

Gate Threshold Voltage

-2.0 -4.0 -2.0 -5.0 V

= V

, I

= -1.0mA

GSS

Gate-to-Source Leakage Forward

-- -100 -- -100 nA

= -20V

GSS

Gate-to-Source Leakage Reverse

-- 100 -- 100

= 20 V

DSS

Zero Gate Voltage Drain Current

-- - 25 -- -25 µA V

= -160V, V

=0V

DS(on)

Static Drain-to-Source

-- 0.154 -- 0.154

= -12V, I

=-17A

On-State Resistance (TO-3)

DS(on)

Static Drain-to-Source

-- 0.160 -- 0.160

= -12V, I

= -17A

On-State Resistance (TO-254)

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.

1. Part number IRHM9260
2. Part number IRHM93260

Fig a. Single Event Effect, Safe Operating Area

Diode Forward Voltage

-3.3 -- -3.3 V

= 0V, IS = -27A

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

Radiation Characteristics

Table 2. Single Event Effect Safe Operating Area

Ion

LET

Energy Range

(V)

MeV/(mg/cm

)) (MeV) (µm) @V

=0V @V

=5V @V

=10V @V

=15V @V

=20V

28.0

285 43.0 -200 -200 -200 -200 --

36.8

305 39.0 -200 -200 -125 -75 --

-250

-200

-150

-100

-50

VGS

VDS

IRHM9260, JANSR2N7426

Pre-Irradiation

www.irf.com

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

100

1000

100

20µs PULSE WIDTH
T = 25 C

TOP

BOTTOM

VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
-5.0V

-V , Drain-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

-5.0V

100

1000

100

20µs PULSE WIDTH
T = 150 C

TOP

BOTTOM

VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
-5.0V

-V , Drain-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

-5.0V

100

1000

V = -50V
20µs PULSE WIDTH

-V , Gate-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

T = 25 C

T = 150 C

-60 -40 -20

80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

I =

-12V

-27A

www.irf.com

IRHM9260, JANSR2N7426

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Pre-Irradiation

100

2000

4000

6000

8000

10000

-V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

V
C
C
C

=
=
=
=

0V,
C
C
C

f = 1MHz

+ C

C SHORTED

GS
iss

gd ,

rss

oss

iss

oss

rss

100

150

200

250

300

Q , Total Gate Charge (nC)

-V , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

SEE FIGURE

I =

-27A

= 40V

= 100V

= 160V

0.1

100

1000

0.0

1.0

2.0

3.0

4.0

5.0

-V ,Source-to-Drain Voltage (V)

-I , Reverse Drain Current (A)

V = 0 V

T = 25 C

T = 150 C

100

1000

100

1000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

Single Pulse

= 150 C

= 25 C

-V , Drain-to-Source Voltage (V)

-I , Drain Current (A)
I , Drain Current (A)

100us

1ms

10ms

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