irhm71601

Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 12V, TC = 25°C Continuous Drain Current

35*

ID @ VGS = 12V, TC = 100°C Continuous Drain Current

35*

IDM

Pulsed Drain Current

201

PD @ TC = 25°C

Max. Power Dissipation

250

Linear Derating Factor

2.0

W/°C

VGS

Gate-to-Source Voltage

±20

EAS

Single Pulse Avalanche Energy

500

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

7.3

V/ns

Operating Junction

-55 to 150

TSTG

Storage Temperature Range
Lead Temperature

300 ( 0.063 in.(1.6mm) from case for 10s)

Weight

9.3 (Typical )

Pre-Irradiation

International Rectifiers RADHard HEXFET

technol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for both Total Dose and Single Event Effects (SEE).

The combination of low Rdson and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

RADIATION HARDENED

POWER MOSFET

THRU-HOLE

THRU-HOLE (T0-254AA)

(T0-254AA)

8/14/01

www.irf.com

Product Summary

Part Number Radiation Level

Part Number Radiation Level R

DS(on)

QPL Part Number

IRHM7160 100K Rads (Si) 0.045

35*A JANSR2N7432

IRHM3160 300K Rads (Si) 0.045

35*A JANSF2N7432

IRHM4160 600K Rads (Si) 0.045

35*A JANSG2N7432

IRHM8160 1000K Rads (Si) 0.045

35*A JANSH2N7432

*Current limited by pin diameter
For footnotes refer to the last page

TO-254AA

Features:

Single Event Effect (SEE) Hardened

Low R

DS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Light Weight

PD - 91331C

IRHM7160

JANSR2N7432

100V, N-CHANNEL

REF: MIL-PRF-19500/663

RAD Hard

HEXFET

TECHNOLOGY

www.irf.com

IRHM7160

Pre-Irradiation

Note: Corresponding Spice and Saber models are available on the G&S Website.

Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page

Source-Drain Diode Ratings and Characteristics

Parameter

Min

Min Typ

Typ

Typ Max

Max

Max Units

Units

Test Conditions

Continuous Source Current (Body Diode)

35*

ISM

Pulse Source Current (Body Diode)

140

VSD Diode Forward Voltage

1.8

= 25°C, IS = 35A, VGS = 0V

trr

Reverse Recovery Time

520

Tj = 25°C, IF = 35A, di/dt

100A/

QRR Reverse Recovery Charge

6.1

µC

VDD

50V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Thermal Resistance

Parameter

Min

Min Typ

Typ

Typ Max

Max

Max Units

Units

Test Conditions

RthJC

Junction-to-Case

0.50

RthJA

Junction-to-Ambient

°C/W

Typical socket mount

RthCS

Case-to-Sink

0.21

Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min

Typ

Typ Max

Max

Max Units

Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

100

VGS = 0V, ID = 1.0mA

BVDSS/

TJ Temperature Coefficient of Breakdown

0.107

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

0.045

VGS = 12V, ID =35A

Resistance

VGS(th)

Gate Threshold Voltage

2.0

4.0

VDS = VGS, ID = 1.0mA

gfs

Forward Transconductance

S (

)

VDS > 15V, IDS = 35A

IDSS

Zero Gate Voltage Drain Current

VDS= 80V ,VGS=0V

250

VDS = 80V,

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

-100

VGS = -20V

Total Gate Charge

310

VGS =12V, ID =35A

Qgs

Gate-to-Source Charge

VDS = 50V

Qgd

Gate-to-Drain (Miller) Charge

110

(on)

Turn-On Delay Time

VDD = 50V, ID =35A

Rise Time

150

VGS =12V, RG = 2.35

(off)

Turn-Off Delay Time

150

Fall Time

130

LS + LD

Total Inductance

6.8

Measured from Drain lead (6mm /0.25in.

from package) to Source lead (6mm /0.25in.

from package) with Source wires

internally

bonded from Source Pin to Drain Pad

Ciss

Input Capacitance

5300

VGS = 0V, VDS = 25V

Coss

Output Capacitance

1600

f = 1.0MHz

Crss

Reverse Transfer Capacitance

350

*Current limited by pin diameter

www.irf.com

Pre-Irradiation

IRHM7160

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

Parameter

100 K Rads(Si)

300 - 1000K Rads (Si)

Units

nits

Test Conditions

Min

Min Max

Max

Max Min Max

Min Max

DSS

Drain-to-Source Breakdown Voltage 100 100 V V

= 0V, I

= 1.0mA

/5JD

Gate Threshold Voltage

2.0 4.0 1.25 4.5

= V

, I

= 1.0mA

GSS

Gate-to-Source Leakage Forward

100 100 nA

= 20V

GSS

Gate-to-Source Leakage Reverse

-100 -100

= -20 V

DSS

Zero Gate Voltage Drain Current

25 25 µA V

=80V, V

=0V

DS(on)

Static Drain-to-Source"

0.045 0.062

= 12V, I

=35A

On-State Resistance (TO-3)

DS(on)

Static Drain-to-Source"

0.045 0.062

= 12V, I

=35A

On-State Resistance (TO-254AA)

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Radiation Characteristics

1. Part numbers IRHM7160 (JANSR2N7432)
2. Part number IRHM3160, IRHM4160 and IRH8160 (JANSF2N7432, JANSG2N7432 and JANSH2N7432)

Fig a.

Fig a. Single Event Effect, Safe Operating Area

Diode Forward Voltage"

1.8 1.8 V V

= 0V, IS = 35A

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

Table 2. Single Event Effect Safe Operating Area

Ion

LET

Energy Range

DS(V)

MeV/(mg/cm

)) (MeV) µm) @

V
V

=0V @

=-5V@

=-10V@

V
V

=-15V@

V
V

=-20V

285 43 100 100 100 80 60

36.8

305 39 100 90 70 50

100

120

-5

-10

-15

-20

-25

VGS

VDS

Cu
Br

www.irf.com

IRHM7160

Pre-Irradiation

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

100

1000

100

20µs PULSE WIDTH

T = 25 C

TOP

BOTTOM

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

5.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

5.0V

100

1000

100

20µs PULSE WIDTH

T = 150 C

TOP

BOTTOM

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

5.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

5.0V

100

1000

V = 50V
20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

T = 25 C

T = 150 C

-60 -40 -20

20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

I =

12V

50A

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Pre-Irradiation

IRHM7160

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

100

2000

4000

6000

8000

10000

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

C
C
C

=
=
=

0V,

C
C
C

f = 1MHz

+ C

C SHORTED

GS
iss

gd ,

rss

oss

iss

oss

rss

120

160

200

240

280

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

SEE FIGURE

I =

35A

= 20V

= 50V

= 80V

100

1000

0.4

0.8

1.2

1.6

2.0

2.4

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

T = 25 C

T = 150 C

100

1000

100

1000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

Single Pulse

= 150 C

= 25 C

V , Drain-to-Source Voltage (V)

I , Drain Current (A)
I , Drain Current (A)

100us

1ms

10ms

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