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Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 12V, TC = 25°C

Continuous Drain Current

18*

ID @ VGS = 12V, TC = 100°C Continuous Drain Current

IDM

Pulsed Drain Current

PD @ TC = 25°C

Max. Power Dissipation

Linear Derating Factor

0.6

W/°C

VGS

Gate-to-Source Voltage

±20

EAS

Single Pulse Avalanche Energy

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

7.5

dv/dt

Peak Diode Recovery dv/dt

8.0

V/ns

Operating Junction

-55 to 150

TSTG

Storage Temperature Range
Lead Temperature 300 (0.063in./1.6mm from case for 10sec)
Weight

4.3(Typical)

Pre-Irradiation

International Rectifier's R5

technology provides

high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm

)). The combination

of low R

DS(on)

and low gate charge reduces the

power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.

RADIATION HARDENED JANSR2N7488T3
POWER MOSFET 130V, N-CHANNEL
THRU-HOLE (TO-257AA)

REF: MIL-PRF-19500/705

06/10/04

www.irf.com

TECHNOLOGY

Product Summary

Part Number Radiation Level R

(on)

QPL Part Number

IRHY57133CMSE 100K Rads (Si) 0.09

18A* JANSR2N7488T3

Features:

Single Event Effect (SEE) Hardened

Ultra Low R

DS(on)

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Eyelets

Light Weight

For footnotes refer to the last page

T0-257AA

* Current is limited by package

IRHY57133CMSE

PD - 94318C

IRHY57133CMSE, JANSR2N7488T3

Pre-Irradiation

www.irf.com

Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

130

-- V VGS = 0V, ID = 1.0mA

BVDSS/TJ Temperature Coefficient of Breakdown

0.16

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

0.09

VGS = 12V, ID = 12A

Resistance

VGS(th)

Gate Threshold Voltage

2.5

4.5

VDS = VGS, ID = 1.0mA

gfs

Forward Transconductance

8.5

S (

)

VDS > 15V, IDS = 12A Ã

IDSS

Zero Gate Voltage Drain Current

10 VDS= 104V ,VGS=0V

25 VDS = 104V,

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

100 VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

-100

VGS = -20V

Total Gate Charge

48 VGS =12V, ID = 18A

Qgs

Gate-to-Source Charge

16 nC VDS = 65V

Qgd

Gate-to-Drain (`Miller') Charge

(on)

Turn-On Delay Time

20 VDD = 65V, ID = 18A,

Rise Time

70 VGS =12V, RG = 7.5

(off)

Turn-Off Delay Time

Fall Time

LS + LD

Total Inductance

6.8

Ciss

Input Capacitance

965

-- VGS = 0V, VDS = 25V

Coss

Output Capacitance

300

-- pF f = 1.0MHz

Crss

Reverse Transfer Capacitance

µA

Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

18*

ISM

Pulse Source Current (Body Diode)

VSD Diode Forward Voltage

1.2

= 25°C, IS = 18A, VGS = 0V Ã

trr

Reverse Recovery Time

200

Tj = 25°C, IF = 18A, di/dt 100A/µs

QRR Reverse Recovery Charge

1.5

µC

VDD 25V Ã

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

* Current is limited by package

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

RthJC

Junction-to-Case

1.67

RthJA

Junction-to-Ambient

Typical Socket Mount

°C/W

Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page

www.irf.com

IRHY57133CMSE, JANSR2N7488T3

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

ÄÅ

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Radiation Characteristics

Fig a. Single Event Effect, Safe Operating Area

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

Parameter

100K Rads (Si)

Units

Test Conditions

Min

Max

DSS

Drain-to-Source Breakdown Voltage

130

= 0V, I

= 1.0mA

GS(th)

Gate Threshold Voltage

2.0

4.5

= V

, I

= 1.0mA

GSS

Gate-to-Source Leakage Forward

100

= 20V

GSS

Gate-to-Source Leakage Reverse

-100

= -20V

DSS

Zero Gate Voltage Drain Current

µA

=104V, V

=0V

DS(on)

Static Drain-to-Source

On-State Resistance (TO-3)

0.09

= 12V, I

= 12A

DS(on)

Static Drain-to-Source

Diode Forward Voltage

1.2

= 0V, I

= 18A

On-State Resistance (TO-257AA) -- 0.09

= 12V, I

= 12A

Ion

LET

Energy Range

(V)

MeV/(mg/cm

)) (MeV) (µm) @V

=0V @V

=-5V @V

=-10V @V

=-15V @V

=-20V

36.7

309 39.5 130 130 130 130 130

59.8

341 32.5 130 130 130 100 50

82.3

350 28.4 130 120 30

-- --

120

150

-20

-15

-10

-5

VGS

VDS

Br
I
Au

Table 2. Single Event Effect Safe Operating Area

IRHY57133CMSE, JANSR2N7488T3

Pre-Irradiation

www.irf.com

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

0.01

0.1

100

0.1

100

20µs PULSE WIDTH

T = 25 C

TOP

BOTTOM

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

5.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

5.0V

0.1

100

0.1

100

20µs PULSE WIDTH

T = 150 C

TOP

BOTTOM

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

5.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

5.0V

-60 -40 -20

20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature ( C)

, D

r
a
i
n
-
to

-S

o
u
r
ce

n
R

e
sista

n
c
e

orm

a
l
i
z
ed)

(
on)

I =

12V

18A

0.1

100

V = 50V
20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

T = 25 C

T = 150 C

www.irf.com

IRHY57133CMSE, JANSR2N7488T3

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Pre-Irradiation

100

400

800

1200

1600

2000

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

0V,

f = 1MHz

+ C

C SHORTED

GS
iss

gd ,

rss

oss

iss

oss

rss

Q , Total Gate Charge (nC)

V ,

a
t
e
-t

o-Source Vol

t
age (V)

FOR TEST CIRCUIT

SEE FIGURE

I =

18A

= 26V

= 65V

= 104V

0.2

0.6

1.0

1.4

1.8

2.2

VSD, Source-toDrain Voltage (V)

0.1

100

I S

,

R

e
v
e
r
s
e

D

r
a
i
n

C

u
r
r
e
n
t

(
A

)

TJ = 25°C

TJ = 150°C

VGS = 0V

100

1000

VDS , Drain-toSource Voltage (V)

0.1

100

1000

I D

,

D

r
a
i
n
-
t
o
-
S

o
u
r
c
e

C

u
r
r
e
n
t

(
A

)

Tc = 25°C

Tj = 150°C

Single Pulse

1ms

0ms

OPERATION IN THIS AREA

LIMITED BY R DS(on)

100µs

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