Äîêóìåíòàöèÿ è îïèñàíèÿ www.docs.chipfind.ru

Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 12V, TC = 25°C

Continuous Drain Current

7.0

ID @ VGS = 12V, TC = 100°C

Continuous Drain Current

4.5

IDM

Pulsed Drain Current

PD @ TC = 25°C

Max. Power Dissipation

Linear Derating Factor

0.2

W/°C

VGS

Gate-to-Source Voltage

±20

EAS

Single Pulse Avalanche Energy

130

IAR

Avalanche Current

7.0

EAR

Repetitive Avalanche Energy

2.5

dv/dt

Peak Diode Recovery dv/dt

4.2

V/ns

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Lead Temperature

300 (0.063 in./1.6mm from case for 10s)

Weight

0.98 (Typical)

Pre-Irradiation

International Rectifier's R5

technology provides

high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm

)). The combination

of low R

DS(on)

and low gate charge reduces the power

losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.

RADIATION HARDENED JANSR2N7498T2
POWER MOSFET 200V, N CHANNEL
THRU-HOLE ( TO-39) REF:MIL-PRF-19500/706

09/10/03

www.irf.com

TECHNOLOGY

TO-39

For footnotes refer to the last page

Features:

Single Event Effect (SEE) Hardened

Ultra Low R

DS(on)

Neutron Tolerant

Identical Pre- and Post-Electrical Test Conditions

Repetitive Avalanche Ratings

Dynamic dv/dt Ratings

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Product Summary

Part Number Radiation Level R

DS(on)

QPL Part Number

IRHF57230SE 100K Rads (Si) 0.24

7.0A JANSR2N7498T2

IRHF57230SE

PD - 93857B

IRHF57230SE, JANSR2N498T2

Pre-Irradiation

www.irf.com

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

5.0

RthJA

Junction-to-Ambient

175

Typical socket mount

°C/W

Note: Corresponding Spice and Saber models are available on the Internationl Rectifier Website.
For footnotes refer to the last page

Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

200

VGS = 0V, ID = 1.0mA

BVDSS/

TJ Temperature Coefficient of Breakdown

0.26

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

0.24

VGS = 12V, ID = 4.5A

Resistance

VGS(th)

Gate Threshold Voltage

2.5

4.5

VDS = VGS, ID = 1.0mA

gfs

Forward Transconductance

4.2

S (

)

VDS > 15V, IDS = 4.5A

IDSS

Zero Gate Voltage Drain Current

VDS= 160V ,VGS=0V

VDS = 160V,

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

-100

VGS = -20V

Total Gate Charge

VGS =12V, ID = 7.0A

Qgs

Gate-to-Source Charge

VDS = 100V

Qgd

Gate-to-Drain (`Miller') Charge

(on)

Turn-On Delay Time

VDD = 100V, ID = 7.0A

Rise Time

100

VGS =12V, RG = 7.5

(off)

Turn-Off Delay Time

Fall Time

LS + LD

Total Inductance

7.0

Measured from Drain lead (6mm /0.25in.

from package) to Source lead (6mm /0.25in.

from package) with Source wires internally

bonded from Source Pin to Drain Pad

Ciss

Input Capacitance

1014

VGS = 0V, VDS = 25V

Coss

Output Capacitance

182

f = 1.0MHz

Crss

Reverse Transfer Capacitance

8.8

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ

Max Units

Test Conditions

Continuous Source Current (Body Diode)

7.0

ISM

Pulse Source Current (Body Diode)

VSD

Diode Forward Voltage

1.5

= 25°C, IS = 7.0A, VGS = 0V

trr

Reverse Recovery Time

274

Tj = 25°C, IF = 7.0A, di/dt

100A/

QRR Reverse Recovery Charge

2.2

VDD

25V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

www.irf.com

IRHF57230SE, JANSR2N7498T2

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.

Radiation Characteristics

Fig a. Single Event Effect, Safe Operating Area

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Single Event Effect Safe Operating Area

For footnotes refer to the last page

Parameter

100K Rads (Si)

Units

Test Conditions

Min

Max

DSS

Drain-to-Source Breakdown Voltage

200

= 0V, I

= 1.0mA

GS(th)

Gate Threshold Voltage

2.0

4.5

= V

, I

= 1.0mA

GSS

Gate-to-Source Leakage Forward

100

= 20V

GSS

Gate-to-Source Leakage Reverse

-100

= -20V

DSS

Zero Gate Voltage Drain Current

µA

= 160V, V

=0V

DS(on)

Static Drain-to-Source

On-State Resistance (TO-3)

0.222

= 12V, I

= 4.5A

DS(on)

Static Drain-to-Source

Diode Forward Voltage

1.5

= 0V, I

= 7.0A

On-State Resistance (TO-39)

-- 0.24

= 12V, I

= 4.5A

Ion

LET

Energy Range

(V)

MeV/(mg/cm

)) (MeV) (µm) @V

=0V @V

=-5V @V

=-10V @V

=-15V @V

=-20V

36.7

309 39.5 200 200 200 200 200

59.8

341 32.5 200 200 200 185 120

82.3

350 28.4 200 200 150

100

150

200

250

-5

-10

-15

-20

VGS

VDS

IRHF57230SE, JANSR2N498T2

Pre-Irradiation

www.irf.com

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

0.01

0.1

100

0.1

100

20µs PULSE WIDTH
T = 25 C

TOP

BOTTOM

VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

5.0V

0.1

100

0.1

100

20µs PULSE WIDTH
T = 150 C

TOP

BOTTOM

VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

5.0V

0.1

100

V = 50V
20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

T = 150 C

T = 25 C

Drain-to-Source Current (A)

-60 -40 -20

80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

I =

12V

7.0A

www.irf.com

IRHF57230SE, JANSR2N7498T2

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Pre-Irradiation

100

400

800

1200

1600

2000

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

V
C
C
C

=
=
=
=

0V,
C
C
C

f = 1MHz

+ C

C SHORTED

GS
iss

gd ,

rss

oss

iss

oss

rss

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

SEE FIGURE

I =

7.0A

= 40V

= 100V

= 160V

0.1

100

0.2

0.8

1.4

2.0

2.6

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

T = 25 C

T = 150 C

1.0

100

1000

VDS , Drain-toSource Voltage (V)

0.1

100

I D

, Drain-to-Source Current (A)

Tc = 25°C

Tj = 150°C

Single Pulse

1ms

10ms

100µs

OPERATION IN THIS AREA LIMITED

BY RDS(on)

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: JANSR2N7498T2

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: JANSR2N7498T2