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Product Summary
Part Number
BV
DSS
R
DS(on)
I
D
JANTX2N6766
JANTXV2N6766
Features:
s
Avalanche Energy Rating
s
Dynamic dv/dt Rating
s
Simple Drive Requirements
s
Ease of Paralleling
s
Hermetically Sealed
N-CHANNEL
200 Volt, 0.085
HEXFET
HEXFET technology is the key to International Rectifier's
advanced line of power MOSFET transistors. The effi-
cient geometry achieves very low on-state resistance
combined with high transconductance.
HEXFET transistors also feature all of the well-establish
advantages of MOSFETs, such as voltage control, very
fast switching, ease of paralleling and electrical param-
eter temperature stability. They are well-suited for appli-
cations such as switching power supplies, motor controls,
inverters, choppers, audio amplifiers, and high energy
pulse circuits, and virtually any application where high
reliability is required.
JANTX2N6766
JANTXV2N6766
[REF:MIL-PRF-19500/543]
[GENERIC:IRF250]
HEXFET
POWER MOSFET
Absolute Maximum Ratings
Parameter
JANTX2N6766, JANTXV2N6766
Units
ID @ VGS = 10V, TC = 25C
Continuous Drain Current
30
ID @ VGS = 10V, TC = 100C Continuous Drain Current
19
IDM
Pulsed Drain Current
120
PD @ TC = 25C
Max. Power Dissipation
150
W
Linear Derating Factor
1.2
W/K
VGS
Gate-to-Source Voltage
20
V
EAS
Single Pulse Avalanche Energy
500
mJ
IAR
Avalanche Current
30
A
EAR
Repetitive Avalanche Energy
15
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 (0.063 in. (1.6mm) from
case for 10.5 seconds)
Weight
11.5 (typical)
g
o
C
A
30A
0.085
200V
Provisional Data Sheet No. PD-9.338D
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Thermal Resistance
Parameter
Min. Typ. Max. Units
Test Conditions
RthJC
Junction-to-Case
--
--
0.83
RthJA
Junction-to-Ambient
--
--
48
K/W
Typical socket mount
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
IS
Continuous Source Current (Body Diode)
--
--
30
Modified MOSFET symbol showing the
ISM
Pulse Source Current (Body Diode)
--
--
120
integral reverse p-n junction rectifier.
VSD
Diode Forward Voltage
--
--
1.9
V
T
j
= 25C, IS = 30A, VGS = 0V
trr
Reverse Recovery Time
--
--
950
ns
Tj = 25C, IF = 30A, di/dt
100A/
s
QRR
Reverse Recovery Charge
--
--
9.0
C
VDD
50V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Electrical Characteristics
@ Tj = 25C (Unless Otherwise Specified)
Parameter
Min.
Typ. Max. Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
200
--
--
V
VGS = 0V, ID = 1.0 mA
BVDSS/
TJ Temperature Coefficient of Breakdown
--
0.29
--
V/C
Reference to 25C, ID = 1.0 mA
Voltage
RDS(on)
Static Drain-to-Source
--
--
0.085
VGS = 10V, ID = 19A
On-State Resistance
--
--
0.090
VGS = 10V, ID = 30A
VGS(th)
Gate Threshold Voltage
2.0
--
4.0
V
VDS = VGS, ID = 250
A
gfs
Forward Transconductance
9.0
--
--
S (
)
VDS > 15V, IDS = 19A
IDSS
Zero Gate Voltage Drain Current
--
--
25
VDS = 0.8 x Max Rating,VGS = 0V
--
--
250
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125C
IGSS
Gate-to-Source Leakage Forward
--
--
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
--
--
-100
VGS = -20V
Qg
Total Gate Charge
55
--
115
VGS = 10V, ID = 30A
Qgs
Gate-to-Source Charge
8
--
22
VDS = Max. Rating x 0.5
Qgd
Gate-to-Drain ("Miller") Charge
30
--
60
see figures 6 and 13
td(on)
Turn-On Delay Time
--
--
35
VDD = 100V, ID = 30A,
tr
Rise Time
--
--
190
RG = 3.5
,
VGS = 10V
td(off)
Turn-Off Delay Time
--
--
170
tf
Fall Time
--
--
130
see figure 10
LD
Internal Drain Inductance
--
5.0
--
LS
Internal Source Inductance
--
13
--
Ciss
Input Capacitance
--
3500
--
VGS = 0V, VDS = 25V
Coss
Output Capacitance
--
700
--
f = 1.0 MHz
Crss
Reverse Transfer Capacitance
--
110
--
see figure 5
JANTX2N6766, JANTXV2N6766 Device
A
nC
pF
nH
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
Modified MOSFET
symbol showing the
internal inductances.
nA
A
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Fig. 1 -- Typical Output Characteristics
T
C
= 25C
Fig. 2 -- Typical Output Characteristics
T
C
= 150C
Fig. 3 -- Typical Transfer Characteristics
Fig. 4 -- Normalized On-Resistance Vs.Temperature
Fig. 5 -- Typical Capacitance Vs. Drain-to-Source
Voltage
Fig. 6 -- Typical Gate Charge Vs. Gate-to-Source
Voltage
JANTX2N6766, JANTXV2N6766 Device
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JANTX2N6766, JANTXV2N6766 Device
Fig. 10b -- Switching Time Waveforms
Fig. 10a -- Switching Time Test Circuit
Fig. 8 -- Maximum Safe Operating Area
Fig. 9 -- Maximum Drain Current Vs. Case Temperature
Fig. 7 -- Typical Source-to-Drain Diode Forward
Voltage
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Fig. 12c -- Max. Avalanche Energy vs. Current
Fig. 13a -- Gate Charge Test Circuit
Fig. 12a -- Unclamped Inductive Test Circuit
Fig. 12b -- Unclamped Inductive Waveforms
Fig. 11 -- Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration
JANTX2N6766, JANTXV2N6766 Device
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