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Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 12V, TC = 25°C Continuous Drain Current

ID @ VGS = 12V, TC = 100°C Continuous Drain Current

11.7

IDM

Pulsed Drain Current

PD @ TC = 25°C

Max. Power Dissipation

250

Linear Derating Factor

2.0

W/°C

VGS

Gate-to-Source Voltage

±20

EAS

Single Pulse Avalanche Energy

500

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

3.8

V/ns

Operating Junction

-55 to 150

TSTG

Storage Temperature Range
Lead Temperature

300 (0.063 in. (1.6mm) from case for 10 sec.)

Weight

9.3 (Typical)

Pre-Irradiation

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-254AA)

5/17/01

www.irf.com

TO-254AA

Product Summary

Part Number Radiation Level

Part Number Radiation Level R

DS(on)

II
II
I

QPL Part Number

IRHM7460SE 100K Rads (Si) 0.32

18A JANSR2N7392

Features:

Single Event Effect (SEE) Hardened

Ultra Low R

DS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Light Weight

For footnotes refer to the last page

IRHM7460SE

JANSR2N7392

JANSR2N7392 500V

500V

N-CHANNEL

REF: MIL-PRF-19500/661

RAD Hard

HEXFET

TECHNOLOGY

International Rectifiers RADHard

HEXFET

MOSFET

technology provides high performance power MOSFETs

for space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been characterized

for both Total Dose and Single Event Effects (SEE). The

combination of low R

DS(on)

and low gate charge reduces

the power losses in switching applications such as DC to

DC converters and motor control. These devices retain

all of the well established advantages of MOSFETs such

as voltage control, fast switching, ease of paralleling and

temperature stability of electrical parameters.

PD - 91394E

IRHM7460SE

Pre-Irradiation

www.irf.com

Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min

Typ

Typ Max

Max

Max Units

Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

500

VGS = 0V, ID = 1.0mA

BVDSS/

TJ Temperature Coefficient of Breakdown

0.66

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

0.32

VGS = 12V, ID = 11.7A

Resistance

0.36

VGS = 12V, ID = 18A

VGS(th)

Gate Threshold Voltage

2.5

4.5

VDS = VGS, ID = 1.0mA

gfs

Forward Transconductance

6.0

S (

)

VDS > 15V, IDS = 11.7A

IDSS

Zero Gate Voltage Drain Current

VDS= 400V ,VGS=0V

250

VDS = 400V,

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

-100

VGS = -20V

Total Gate Charge

180

VGS =12V, ID = 18A

Qgs

Gate-to-Source Charge

VDS = 250V

Qgd

Gate-to-Drain (Miller) Charge

(on)

Turn-On Delay Time

VDD =250V, ID =18A,

Rise Time

VGS =12V, RG = 2.35

(off)

Turn-Off Delay Time

Fall Time

LS + LD

Total Inductance

6.8

Ciss

Input Capacitance

3500

VGS = 0V, VDS = 25V

Coss

Output Capacitance

730

f = 1.0MHz

Crss

Reverse Transfer Capacitance

260

Thermal Resistance

Parameter

M i n

M i n Typ

Typ

Typ M a x

M a x

M a x Units

Units

Test Conditions

RthJC

Junction-to-Case

0.50

RthCS

Case-to-Sink

0.21

°C/W

Measured from drain lead (6mm/0.25in. from

package) to source lead (6mm/0.25in. from
package)

Source-Drain Diode Ratings and Characteristics

Parameter

Min

Min Typ

Typ

Typ Max

Max

Max Units

Units

Test Conditions

Continuous Source Current (Body Diode)

ISM

Pulse Source Current (Body Diode)

VSD Diode Forward Voltage

1.8

= 25°C, IS = 18A, VGS = 0V

trr

Reverse Recovery Time

800

Tj = 25°C, IF = 18A, di/dt

100A/

QRR Reverse Recovery Charge

VDD

50V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

RthJA

Junction-to-Ambient

Typical socket mount

www.irf.com

Pre-Irradiation

IRHM7460SE

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Fig a.

Fig a. Single Event Effect, Safe Operating Area

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Single Event Effect Safe Operating Area

For footnotes refer to the last page

Parameter

100K Rads (Si)

Units

Test Conditions

Min

Max

DSS

Drain-to-Source Breakdown Voltage

500

= 0V, I

= 1.0mA

/5JD

Gate Threshold Voltage

2.0

4.5

= V

, I

= 1.0mA

GSS

Gate-to-Source Leakage Forward

100

= 20V

GSS

Gate-to-Source Leakage Reverse

-100

= -20V

DSS

Zero Gate Voltage Drain Current

µA

= 400V, V

=0V

DS(on)

Static Drain-to-Source# $
On-State Resistance (TO-3)

0.32

= 12V, I

= 11.7A

DS(on)

Static Drain-to-Source# $
On-State Resistance (TO-254) 0.32

= 12V, I

= 11.7A

Diode Forward Voltage# $

1.8

= 0V, I

= 18A

Ion

L E T

Energy Range

V
V

(V)

MeV/(mg/cm

)) (MeV) (µm) @V

=0V @V

=-5V @V

=-10V @V

=-15V @V

=-20V

285 43 375 375 375 375 375

36.8

305 39 350 350 350 325 300

100

200

300

400

-5

-10

-15

-20

VGS

VDS

26.6

265 42

375

IRHM7460SE

Pre-Irradiation

www.irf.com

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

0.01

0.1

100

0.1

100

20us PULSE WIDTH

T = 25 C

TOP

BOTTOM

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

5.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

5.0V

0.1

100

0.1

100

20us PULSE WIDTH

T = 150 C

TOP

BOTTOM

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

5.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

5.0V

V = 50V

20µs PULSE WIDTH

0.1

100

5.0

6.0

7.0

8.0

9.0

10.0

11.0

12.0

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

T = 25 C

T = 150 C

-60 -40 -20

20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

I =

12V

18A

www.irf.com

Pre-Irradiation

IRHM7460SE

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

100

2000

4000

6000

8000

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

C
C
C

=
=
=

0V,

C
C
C

f = 1MHz

+ C

C SHORTED

GS
iss

gd ,

rss

oss

iss

oss

rss

120

160

200

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

SEE FIGURE

I =

18A

= 100V

= 250V

= 400V

0.1

100

0.2

0.6

1.0

1.4

1.8

2.2

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

T = 25 C

T = 150 C

100

1000

100

1000

10000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

Single Pulse

= 150 C

= 25 C

V , Drain-to-Source Voltage (V)

I , Drain Current (A)
I , Drain Current (A)

10us

100us

1ms

10ms

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: MIL-PRF-19500

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: MIL-PRF-19500