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Электронный компонент: OM200F120CMD

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205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.com
12/08/98 Rev. C
1
ELECTRICAL CHARACTERISTICS: OM200F120CMD (Tc= 25

C unless otherwise specified)
Characteristic
Symbol
Min.
Typ.
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage, V
CE
=0V
V
CES
1200
V
Zero Gate Voltage Drain Current, V
GE
=0, V
CE
=1200V
I
CES
10
A
Gate Emitter Leakage Current, V
GE
=+/-15V, V
CE
=0V
I
GES
100
A
ON CHARACTERISTICS
Gate Threshold Voltage, V
CE
=V
GE,
I
C
=6mA
V
GE(TH)
4.5
5.5
6.5
V
Collector Emitter Saturation Voltage, V
GE
=15V, Ic=200A
V
CE(SAT)
2.5
3.0
V
DYNAMIC CHARACTERISTICS
Fwd. Transconductance
V
CE
=5V, I
C
=200A
gfs
50
69
S
Input Capacitance
V
GE
=0
Cies
17
nF
Output Capacitance
V
CE
=25V
Coes
5
nF
Rev. Transfer Capacitance
f=1.0MHz
Cres
2
nF
SWITCHING INDUCTIVE LOAD CHARACTERISTICS
Turn-On Delay Time
t(on)
175 400
nS
Rise Time
V
CC
= 600V, I
C
=200A
tr
140
nS
Turn-on Losses
Eon
28
mJ
V
GE
=+15/-10V, R
G
=5.1
Turn-off Delay Time
L=100
H
td(off)
720 850
nS
Fall Time
tf
120
nS
Turn-off Losses
Eoff
15
mJ
DIODE CHARACTERISTICS
Maximum Forward Voltage
I
F
=200A, Tj=25
C
V
F
2.0
2.8
V
Tj=125
C
1.8
2.3
V
R
=600V, Tj=25
C
Qrr
10
C
Reverse Recovery
I
F
=200A, Tj=125
C
15
Characteristics
dI/dt=-1500A/
S Tj=25
C
Irr
75
A
Tj=125
C
95
Tj=25
C
trr
100
nS
Tj=125
C
150
THERMAL AND MECHANICAL CHARACTERISTICS
Thermal Resistance, Junction to Case (Per IGBT)
R
thJC
0.07
C/W
Thermal Resistance, Junction to Case (Per Diode)
R
thJC
0.12
C/W
Maximum Junction Temperature
T
jMAX
150
C
Isolation Voltage
Vis
RMS
2500
V
Screw Torque Mounting
-
15
20
in-lb
Screw Torque (M6) Terminals
10
12
in-lb
Screw Torque (M3) Terminals
-
6
8
in-lb
Module Weight
-
320
Grams
205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.com
12/08/98 Rev. C
2
OM200F120CMD
IGBT Collector Current vs. Collector-emitter Voltage
Tj=125C
0
100
200
300
400
0
2
4
6
8
10
12
Vce(V)
Ic(A)
Vge=15V
Vge=13V
Vge=11V
Vge=9V
Vge=7V
Vge=5V
IGBT Collector Current vs. Collector-emitter Voltage
Tj=25C
0
100
200
300
400
0
2
4
6
8
10
12
Vce(V)
Ic(A)
Vge=15V
Vge=13V
Vge=11V
Vge=9V
Vge=7V
IGBT Collector Current vs. Collector-emitter Voltage
Tj=- 55C
0
100
200
300
400
0
2
4
6
8
10
12
Vce(V)
Ic(A)
Vge=13V
Vge=15V
Vge=11V
Vge=9V
Vge=7V
Switching energy vs Temperature
Vce =600V,Ic=200A
0
10
20
30
40
50
0
25
50
75
100
125
150
T(C)
E
nergyf (mJ)
Eoff
Eon
Switching energy vs Gate Resistor(Rg)
Vce =600V,Ic=200A, Tj=125C
0
10
20
30
40
50
0
5
10
15
20
25
Rg(Ohms)
Energy (mJ)
Eof f
Eon
Switching energy vs Collector current (Ic)
Vce =600V,Tj=25C
0
10
20
30
40
50
0
25
50
75
100
125
150
175
200
Ic(A)
Energyf (mJ)
Eoff
Eon
205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.com
12/08/98 Rev. C
3
OM200F120CMD
Diode Forward Current vs. Forward Voltage
Vge =0V
0
100
200
300
400
0
0.5
1
1.5
2
2.5
Vf (V)
If (A)
Tj=-55C
Tj=25C
Tj=125C
205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.com
12/08/98 Rev. C
4
OM200F120CMD
MECHANICAL OUTLINE
C2E1
E2
C1
G2
E2
E1
G1
EQUIVALENT CIRCUIT
C1
E2
C2E1
E1
G1
G2
E2