3.1 - 93
3.1
4 11 R0
POWER MOSFETS IN HERMETIC ISOLATED
JEDEC TO-254AA SIZE 6 DIE
FEATURES
Isolated Hermetic Metal Package
Size 6 Die, High Energy
Fast Switching, Low Drive Current
Ease of Paralleling For Added Power
Low R
DS(on)
Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits. This series also features avalanche high energy capability
at elevated temperatures.
MAXIMUM RATINGS
OM6025SA
OM6026SA
400V, 500V, N-Channel, Up To 24 Amp
Size 6 MOSFETs, High Energy Capability
PART NUMBER
V
DS
R
DS(on)
I
D
(Amp)
OM6025SA
400
.23
24
OM6026SA
500
.30
22
SCHEMATIC
3.1 - 94
OM6025SA - OM6026SA
3.1
ABSOLUTE MAXIMUM RATINGS (T
C
= 25C unless otherwise noted)
Parameter
OM6025SA OM6026SA
Units
V
DS
Drain-Source Voltage
400
500
V
V
DGR
Drain-Gate Voltage (R
GS
= 1 M )
400
500
V
I
D
@ T
C
= 25C
Continuous Drain Current
2
24
22
A
I
DM
Pulsed Drain Current
2
92
85
A
P
D
@ T
C
= 25C
Maximum Power Dissipation
165
165
W
Derate Above 25C Ambient
.025
.025
W/C
W
DSS
(1) (2)
Single Pulse Energy
Drain To Source @ 25C
1000
1200
mJ
T
J
Operating and
T
stg
Storage Temperature Range
-55 to 150
-55 to 150
C
Lead Temperature
(1/8" from case for 5 secs.)
275
275
C
Note 1: V
DD
= 50V, I
D
= as noted
Note 2: Package Pin Limitation I
D
@ T
C
= 25C = 25 Amps
THERMAL RESISTANCE (MAXIMUM) at T
A
= 25C
R
thJC
Junction-to-Case
.76
C/W
R
thJA
Junction-to-Ambient
40
C/W
Free Air Operation
Derate Above 25C Case
1.32
W/C
3.1 - 95
OM6025SA - OM6026SA
3.1
ELECTRICAL CHARACTERISTICS:
OM6025SA
(T
C
= 25 unless otherwise noted)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (V
GS
= 0, I
D
= 0.25 mA)
V
(BR)DSS
400
-
-
Vdc
Zero Gate Voltage Drain
I
DSS
mAdc
(V
DS
= 400 V, V
GS
= 0)
-
-
0.25
(V
DS
= 400 V, V
GS
= 0, T
J
= 125 C)
-
-
1.0
Gate-Body Leakage Current, Forward (V
GSF
= 20 Vdc, V
DS
= 0)
I
GSSF
-
-
100
nAdc
Gate-Body Leakage Current, Reverse (V
GSR
= 20 Vdc, V
DS
= 0)
I
GSSR
-
-
100
nAdc
ON CHARACTERISTICS
*
Gate-Threshold Voltage
V
GS(th)
Vdc
(V
DS
= V
GS
, I
D
= 0.25 mAdc
2.0
3.0
4.0
(T
J
= 125 C)
1.5
-
3.5
Static Drain-Source On-Resistance (V
GS
= 10 Vdc, I
D
= 12 Adc)
r
DS(on)
-
-
0.23
Ohm
Drain-Source On-Voltage (V
GS
= 10 Vdc)
V
DS(on)
Vdc
(I
D
= 24 A)
-
-
5.6
(I
D
= 12 A, T
J
= 125 C)
-
-
5.6
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 12 Adc)
g
FS
14
-
-
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 V, V
GS
= 0,
C
iss
-
5600
-
p
F
Output Capacitance
f = 1.0 MHz)
C
oss
-7
8-
Transfer Capacitance
C
rss
-
230
-
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
d(on)
-7
0-
n
s
Rise Time
(V
DD
= 250 V, I
D
=
24 A,
t
r
-
190
-
Turn-Off Delay Time
R
gen
= 4.3 ohms)
t
d(off)
-
160
-
Fall Time
t
f
-
160
-
Total Gate Charge
(V
DS
= 400 V, I
D
= 24 A,
Q
g
-
110
140
nC
Gate-Source Charge
V
GS
= 10 V)
Q
gs
-2
0-
Gate-Drain Charge
Q
gd
-5
5-
SOURCE DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
V
SD
-
1.1
1.6
Vdc
Forward Turn-On Time
(I
S
= 24 A, d/dt = 100 A/s)
t
on
**
ns
Reverse Recovery Time
t
rr
-
500
1000
ELECTRICAL CHARACTERISTICS:
OM6026SA
(T
C
= 25 unless otherwise noted)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (V
GS
= 0, I
D
= 0.25 mA)
V
(BR)DSS
500
-
-
Vdc
Zero Gate Voltage Drain
I
DSS
mAdc
(V
DS
= 500 V, V
GS
= 0)
-
-
0.25
(V
DS
= 500 V, V
GS
= 0, T
J
= 125 C)
-
-
1.0
Gate-Body Leakage Current, Forward (V
GSF
= 20 Vdc, V
DS
= 0)
I
GSSF
-
-
100
nAdc
Gate-Body Leakage Current, Reverse (V
GSR
= 20 Vdc, V
DS
= 0)
I
GSSR
-
-
100
nAdc
ON CHARACTERISTICS
*
Gate-Threshold Voltage
V
GS(th)
Vdc
(V
DS
= V
GS
, I
D
= 0.25 mAdc
2.0
3.0
4.0
(T
J
= 125 C)
1.5
-
3.5
Static Drain-Source On-Resistance (V
GS
= 10 Vdc, I
D
= 11 Adc)
r
DS(on)
-
-
0.30
Ohm
Drain-Source On-Voltage (V
GS
= 10 Vdc)
V
DS(on)
Vdc
(I
D
= 22 A)
-
-
8.0
(I
D
= 11 A, T
J
= 125 C)
-
-
8.0
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 11 Adc)
g
FS
11
-
-
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 V, V
GS
= 0,
C
iss
-
5600
-
p
F
Output Capacitance
f = 1.0 MHz)
C
oss
-
680
-
Transfer Capacitance
C
rss
-
200
-
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
d(on)
-7
0-
n
s
Rise Time
(V
DD
= 250 V, I
D
=
22 A,
t
r
-
190
-
Turn-Off Delay Time
R
gen
= 4.3 ohms)
T
d(off)
-
160
-
Fall Time
V
GS
= 10 V
t
f
-
160
-
Total Gate Charge
(V
DS
= 400 V, I
D
= 22 A,
Q
g
-
115
140
nC
Gate-Source Charge
V
GS
= 10 V)
Q
gs
-2
0-
Gate-Drain Charge
Q
gd
-6
0-
SOURCE DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
V
SD
-
1.1
1.6
Vdc
Forward Turn-On Time
(I
S
= 22A, d/dt = 100 A/s)
t
on
**
ns
Reverse Recovery Time
t
rr
-
500
1000
*
Indicates Pulse Test = 300 sec, Duty Cycle = 2%
**
Limited by circuit inductance
OM6025SC - OM6026SC
1.1
1.2
1.3
1.4
1.5
2.1
3.1
2.3
2.4
3.1
3.2
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
.144 DIA.
.050
.040
.260
.249
.685
.665
.800
.790
.545
.535
.550
.510
.045
.035
.550
.530
.150 TYP.
.150 TYP.
.005
.040 DIA.
3 PLCS.
.150
.260
MAX
.040
.940
.500
MIN.
.150
.125
2 PLCS.
.290
.125 DIA.
2 PLS.
.200
.540
.250
.740
.540
.100
2 PLCS.
.300
1
2
3
1
2
3
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
NOTES:
Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter "C" to the part number. Example - OMXXXXCSA.
MOSFETs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
PACKAGE OPTIONS
MOD PAK
Z-TAB
6 PIN SIP
PIN CONNECTION
MECHANICAL OUTLINE
M-3S
M-PAK
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ZIP