3.1 - 139
3.1
500 Volt, 5 And 10 Amp, N-Channel IGBT
In A Hermetic Metal Package
4 11 R2
Supersedes 2 07 R1
INSULATED GATE BIPOLAR TRANSISTOR
(IGBT) IN A HERMETIC TO-257AA PACKAGE
OM6501ST
OM6502ST
FEATURES
Isolated Hermetic Metal Package
High Input Impedance
Low On-Voltage
High Current Capability
Fast Turn-Off
Low Conductive Losses
Available Screened to MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
The IGBT power transistor features a high impedance insulated gate and a low
on-resistance characteristic of bipolar transistors. These devices are ideally suited
for motor drives, UPS converters, power supplies and resonant power converters.
MAXIMUM RATINGS
@ 25C Unless Specified Otherwise
PART
I
C
(Cont.)
V
(BR)CES
V
CE (sat)
(Typ.)
T
f
(Typ.)
q
q
JC
P
D
T
J
NUMBER
@ 90C, A
V
V
ns
C/W
W
C
OM6501ST
5
500
2.8
400
3.8
35
150
OM6502ST
10
500
2.8
400
3.0
42
150
SCHEMATIC
MECHANICAL OUTLINE
PACKAGE OPTIONS
.430
.410
.200
.190
.038 MAX.
.005
.120 TYP.
.537
.527
.665
.645
.420
.410
.150
.140
.750
.500
.100 TYP.
.035
.025
.045
.035
Pin 1: Collector
Pin 2: Emitter
Pin 3: Gate
Collector
Emitter
1
2 3
C E G
Gate
Note: IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
MOD PAK
6 PIN SIP
3.1
205 Craw
fo
rd St
re
et, Le
o
m
inster, MA 01
4
53 USA (50
8) 534
-57
76 FAX (508) 537-4246
OM6501ST - OM6502ST
PRELIMINARY DATA: OM6501ST
IGBT CHARACTERISTICS
Parameter - OFF
Min. Typ. Max. Units Test Conditions
V
(BR)CES
Collector Emitter
500
V
V
CE
= 0
Breakdown Voltage
I
C
= 250 A
I
CES
Zero Gate Voltage
0.25
mA
V
CE
= Max. Rat., V
GE
= 0
Drain Current
1.0
mA
V
CE
= 0.8 Max. Rat., V
GE
= 0
T
C
= 125C
I
GES
Gate Emitter Leakage
100
nA
V
GE
= 20 V
Current
V
CE
= 0 V
Parameter - ON
V
GE(th)
Gate Threshold Voltage
2.0
4.0
V
V
CE
= V
GE
, I
C
= 250 A
V
CE(sat)
Collector Emitter
3.0
V
V
GE
= 15 V, I
C
= 5 A
Saturation Voltage
T
C
= 25C
V
CE(sat)
Collector Emitter
2.8
3.0
V
V
GE
= 15 V, I
C
= 5 A
Saturation Voltage
T
C
= 100C
Dynamic
g
fs
Forward Transductance
2.0
S
V
CE
= 20 V, I
C
= 5 A
C
ies
Input Capacitance
260
pF
V
GE
= 0
C
oes
Output Capacitance
50
pF
V
CE
= 25 V
C
res
Reverse Transfer Capacitance
20
pF
f = 1 mHz
Switching-Resistive Load
T
d(on)
Turn-On Time
37
nS
V
CC
= 400 V, I
C
= 5 A
t
r
Rise Time
150
nS
V
GE
= 15 V, R
g
= 47
Switching-Inductive Load
t
r(Volt)
Off Voltage Rise Time
.35
S
V
CEclamp
= 400 V, I
C
= 5 A
t
f
Fall Time
.81
S
V
GE
= 15 V, R
g
= 100
t
cross
Cross-Over Time
1.2
S
L = 0.1 mH, T
j
= 100C
E
off
Turn-Off Losses
.95
mJ
PRELIMINARY DATA: OM6502ST
IGBT CHARACTERISTICS
Parameter - OFF
Min. Typ. Max. Units Test Conditions
V
(BR)CES
Collector Emitter
500
V
V
CE
= 0
Breakdown Voltage
I
C
= 250 A
I
CES
Zero Gate Voltage
0.25
mA
V
CE
= Max. Rat., V
GE
= 0
Drain Current
1.0
mA
V
CE
= 0.8 Max. Rat., V
GE
= 0
T
C
= 125C
I
GES
Gate Emitter Leakage
100
nA
V
GE
= 20 V
Current
V
CE
= 0 V
Parameter - ON
V
GE(th)
Gate Threshold Voltage
2.0
4.0
V
V
CE
= V
GE
, I
C
= 250 A
V
CE(sat)
Collector Emitter
3.0
V
V
GE
= 15 V, I
C
= 10 A
Saturation Voltage
T
C
= 25C
V
CE(sat)
Collector Emitter
2.8
3.0
V
V
GE
= 15 V, I
C
= 10 A
Saturation Voltage
T
C
= 100C
Dynamic
g
fs
Forward Transductance
2.5
S
V
CE
= 20 V, I
C
= 10 A
C
ies
Input Capacitance
950
pF
V
GE
= 0
C
oes
Output Capacitance
140
pF
V
CE
= 25 V
C
res
Reverse Transfer Capacitance
80
pF
f = 1 mHz
Switching-Resistive Load
T
d(on)
Turn-On Time
150
nS
t
r
Rise Time
1000
nS
V
CC
= 400 V, I
C
= 10 A
T
d(off)
Turn-Off Delay Time
700
nS
V
GE
= 15 V, R
g
= 100
t
f
Fall Time
1500
nS
Switching-Inductive Load
T
d(off)
Turn-Off Delay Time
1.2
S
V
CEclamp
= 350 V, I
C
= 10 A
t
f
Fall Time
1.5
S
V
GE
= 15 V, R
g
= 100
t
cross
Cross-Over Time
2.0
S
L = 180 H, T
j
= 100C
E
off
Turn-Off Losses
4.0
mJ
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