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Электронный компонент: OM6526SW

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3.1 - 157
3.1
1000 Volt, 15 And 20 Amp, N-Channel IGBT
In A Hermetic Metal Package
4 11 R2
Supersedes 2 07 R1
INSULATED GATE BIPOLAR TRANSISTOR
(IGBT) IN A HERMETIC TO-254AA PACKAGE
FEATURES
Isolated IGBTs In A Hermetic Package
High Input Impedance
Low On-Voltage
High Current Capability
High Switching Speed
Low Tail Current
Available Screened To MIL-S-19500, TX, TXV and S Levels
Ceramic Feedthroughs Available
DESCRIPTION
This IGBT power transistor features the high switching speeds of a power MOSFET
and the low on-resistance of a bipolar transistor. It is ideally suited for high power
switching applications such as frequency converters for 3 motors, UPS and high
power SMPS.
MAXIMUM RATINGS
@ 25C Unless Specified Otherwise
OM6517SA
OM6526SA
PART
I
C
(Cont.)
V
(BR)CES
V
CE (sat)
(Typ.)
T
f
(Typ.)
q
q
JC
P
D
T
J
NUMBER
@ 90C, A
V
V
ns
C/W
W
C
OM6517SA
20
1000
4.0
300
1.0
125
150
OM6526SA
15
1000
4.0
300
1.5
85
150
SCHEMATIC
.144 DIA.
.050
.040
.260
.249
.685
.665
.800
.790
.545
.535
.550
.510
.045
.035
.550
.530
.150 TYP.
.150 TYP.
.005
Collector
Emitter
Gate
MECHANICAL OUTLINE
.040 DIA.
3 PLCS.
.150
.260
MAX
.040
.940
.500
MIN.
.150
.125
2 PLCS.
.290
.125 DIA.
2 PLS.
.200
.540
.250
.740
.540
.100
2 PLCS.
.300
TO-254
Z-Pak
Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter "C" to the part number. Example - OMXXXXCSA.
IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
PACKAGE OPTIONS
MOD PAK
Z-TAB
6 PIN SIP
OM6517SA OM6526SA
3.1
205 Craw
fo
rd St
re
et, Le
o
m
inster, MA 01
4
53 USA (50
8) 534
-57
76 FAX (508) 537-4246
PRELIMINARY DATA: OM6517SA
IGBT CHARACTERISTICS
Parameter - OFF
Min. Typ. Max. Units Test Conditions
V
(BR)CES
Collector Emitter
1000
V
V
CE
= 0
Breakdown Voltage
I
C
= 250 A
I
CES
Zero Gate Voltage
0.25
mA
V
CE
= Max. Rat., V
GE
= 0
Drain Current
1.0
mA
V
CE
= 0.8 Max. Rat., V
GE
= 0
T
C
= 125C
I
GES
Gate Emitter Leakage
100
nA
V
GE
= 20 V
Current
V
CE
= 0 V
Parameter - ON
V
GE(th)
Gate Threshold Voltage
4.5
6.5
V
V
CE
= V
GE
, I
C
= 1 mA
V
CE(sat)
Collector Emitter
3.0
V
V
GE
= 15 V, I
C
= 15 A
Saturation Voltage
T
C
= 25C
V
CE(sat)
Collector Emitter
4.0
4.5
V
V
GE
= 15 V, I
C
= 15 A
Saturation Voltage
T
C
= 125C
Dynamic
g
fs
Forward Transductance
5.5
S
V
CE
= 20 V, I
C
= 15 A
C
ies
Input Capacitance
2000
pF
V
GE
= 0
C
oes
Output Capacitance
160
pF
V
CE
= 25 V
C
res
Reverse Transfer Capacitance
65
pF
f = 1 mHz
Switching-Resistive Load
T
d(on)
Turn-On Time
50
nS
V
CC
= 600 V, I
C
= 15 A
t
r
Rise Time
200
nS
V
GE
= 15 V, R
g
= 3.3 ,
T
d(off)
Turn-Off Delay Time
200
nS
T
j
= 125C
t
f
Fall Time
300
nS
Switching-Inductive Load
T
d(off)
Turn-Off Delay Time
200
nS
V
CEclamp
= 600 V, I
C
= 15 A
t
f
Fall Time
200
nS
V
GE
= 15 V, R
g
= 3.3
E
off
Turn-Off Losses
1.5
mWs L = 1 mH, T
j
= 125C
PRELIMINARY DATA: OM6526SA
IGBT CHARACTERISTICS
Parameter - OFF
Min. Typ. Max. Units Test Conditions
V
(BR)CES
Collector Emitter
1000
V
V
CE
= 0
Breakdown Voltage
I
C
= 150 A
I
CES
Zero Gate Voltage
150
A
V
CE
= Max. Rat., V
GE
= 0
Drain Current
700
A
V
CE
= 0.8 Max. Rat., V
GE
= 0
T
C
= 125C
I
GES
Gate Emitter Leakage
100
nA
V
GE
= 20 V
Current
V
CE
= 0 V
Parameter - ON
V
GE(th)
Gate Threshold Voltage
4.5
6.5
V
V
CE
= V
GE
, I
C
= 700 A
V
CE(sat)
Collector Emitter
3.0
V
V
GE
= 15 V, I
C
= 10 A
Saturation Voltage
T
C
= 25C
V
CE(sat)
Collector Emitter
4.0
4.5
V
V
GE
= 15 V, I
C
= 10 A
Saturation Voltage
T
C
= 125C
Dynamic
g
fs
Forward Transductance
3.5
S
V
CE
= 20 V, I
C
= 10 A
C
ies
Input Capacitance
1300
pF
V
GE
= 0
C
oes
Output Capacitance
100
pF
V
CE
= 25 V
C
res
Reverse Transfer Capacitance
50
pF
f = 1 mHz
Switching-Resistive Load
T
d(on)
Turn-On Time
50
nS
V
CC
= 600 V, I
C
= 10 A
t
r
Rise Time
200
nS
V
GE
= 15 V, R
g
= 3.3 ,
T
d(off)
Turn-Off Delay Time
200
nS
T
j
= 125C
t
f
Fall Time
300
nS
Switching-Inductive Load
T
d(off)
Turn-Off Delay Time
200
nS
V
CEclamp
= 600 V, I
C
= 10 A
t
f
Fall Time
200
nS
V
GE
= 15 V, R
g
= 3.3
E
off
Turn-Off Losses
1.1
mWs L = 1 mH, T
j
= 125C