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Электронный компонент: P434K

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40A
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS
P400 SERIES
1
Bulletin I2776 rev. E 04/99
www.irf.com
I
D
40
A
@ T
C
80
C
I
FSM
@
50Hz
385
A
@ 60Hz
400
A
I
2
t
@
50Hz
745
A
2
s
@ 60Hz
680
A
2
s
I
2
t
7450
A
2
s
V
RRM
400 to 1200
V
V
INS
2500
V
T
J
- 40 to 125
C
Parameters
P400
Units
Major Ratings and Characteristics
Description
The P400 series of Integrated Power Circuits con-
sists of power thyristors and power diodes
configured in a single package. With its isolating
base plate, mechanical designs are greatly simpli-
fied giving advantages of cost reduction and
reduced size.
Applications include power supplies, control cir-
cuits and battery chargers.
Features
Glass passivated junctions for greater reliability
Electrically isolated base plate
Available up to 1200 V
RRM
, V
DRM
High dynamic characteristics
Wide choice of circuit configurations
Simplified mechanical design and assembly
UL E78996 approved
P400 Series
2
Bulletin I2776 rev. E 04/99
www.irf.com
V
RRM
maximum repetitive
V
RSM
maximum non-
V
DRM
maximum
I
RRM
max.
Type number
peak reverse voltage
repetitive peak reverse
repetitive peak off-state
@ T
J
max.
voltage
voltage
V
V
V
mA
P401, P421, P431
400
500
400
10
P402, P422, P432
600
700
600
P403, P423, P433
800
900
800
P404, P424, P434
1000
1100
1000
P405, P425, P435
1200
1300
1200
I
D
Maximum DC output current
4 0
A
@ T
C
= 80C, full bridge circuits
I
TSM
Max. peak one-cycle
385
A
t = 10ms
No voltage
I
FSM
non-repetitive on-state
400
t = 8.3ms
reapplied
or forward current
325
t = 10ms
100% V
RRM
340
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
745
A
2
s
t = 10ms
No voltage
Initial T
J
= T
J
max.
680
t = 8.3ms
reapplied
530
t = 10ms
100% V
RRM
480
t = 8.3ms
reapplied
I
2
t
Maximum I
2
t for fusing
7450
A
2
s
t = 0.1 to 10ms, no voltage reapplied
I
2
t for time tx = I
2
t
.
tx
V
T(TO)1
Low value of threshold voltage
0.83
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
V
T(TO)2
High value of threshold voltage
1.03
(I >
x I
T(AV)
), T
J
= T
J
max.
r
t1
Low level value of on-state
slope resistance
r
t2
High level value of on-state
slope resistance
V
TM
Max. peak on-state or
T
J
= 25C, I
TM
=
x I
T(AV)
V
FM
forward voltage drop
T
J
= 25C, I
TM
=
x I
F(AV)
di/dt
Maximum non repetitive rate of
T
J
= 125C from 0.67 V
DRM
rise of turned on current
I
TM
=
x I
T(AV)
, I
g
= 500mA, tr < 0.5s, tp > 6s
I
H
Maximum holding current
130
mA
T
J
= 25C anode supply = 6V, resistive load
I
L
Maximum latching current
250
mA
T
J
= 25C anode supply = 6V, resistive load
Parameter
P400
Units Conditions
On-state Conduction
V
9.61
7.01
m
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
(I >
x I
T(AV)
), T
J
= T
J
max.
1.4
V
200
A/s
ELECTRICAL SPECIFICATIONS
Voltage Ratings
P400 Series
3
Bulletin I2776 rev. E 04/99
www.irf.com
dv/dt
Maximum critical rate of rise of
off-state voltage
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current at V
RRM
, V
DRM
I
RRM
Max peak reverse leakage current
100
A
T
J
= 25C
50Hz, circuit to base, all terminal shorted,
T
J
= 25C, t = 1s
Blocking
Parameter
P400
Units Conditions
200
V/s
T
J
= 125C, exponential to 0.67 V
DRM
gate open
10
mA
T
J
= 125C, gate open circuit
V
INS
RMS isolation voltage
2500
V
P
GM
Maximum peak gate power
8
P
G(AV)
Maximum average gate power
2
I
GM
Maximum peak gate current
2
A
- V
GM
Maximum peak negative
gate voltage
V
GT
Maximum gate voltage required
3
T
J
= - 40C
to trigger
2
T
J
= 25C
Anode Supply = 6V resistive load
1
T
J
= 125C
I
GD
Maximum gate current
90
T
J
= - 40C
required to trigger
60
mA
T
J
= 25C
Anode Supply = 6V resistive load
35
T
J
= 125C
V
GD
Maximum gate voltage
that will not trigger
I
GD
Maximum gate current
that will not trigger
Parameter
P400
Units Conditions
10
Triggering
W
V
0.2
V
T
J
= 125C, rated V
DRM
applied
2
mA
T
J
= 125C, rated V
DRM
applied
T
J
Max. operating temperature range
-40 to 125
T
stg
Max. storage temperature range
-40 to 125
R
thJC
Max. thermal resistance,
1.05
K/W
DC operation per junction
junction to case
R
thCS
Max. thermal resistance,
0.10
K/W
Mounting surface, smooth and greased
case to heatsink
T
Mounting torque, base to heatsink
4
Nm
wt
Approximate weight
58 (2.0)
g (oz)
Parameter
P400
Units
Conditions
Thermal and Mechanical Specification
C
A mounting compound is recommended and the torque
should be checked after a period of 3 hours to allow for the
spread of the compound
P400 Series
4
Bulletin I2776 rev. E 04/99
www.irf.com
Outline Table
*
To complete code refer to voltage ratings table, i.e.: for 600V P410.W complete code is P402W
12.7 (0.50)
5.
2 (
0
.
20)
32.
5 (
1
.
28)
M
A
X
.
25 (
0
.
98)
M
A
X
.
2.
5 (
0
.
1
0)
M
A
X
.
45 (1.77)
1.65 (0.06)
63.5 (2.50)
Faston 6.35x0.8 (0.25x0.03)
15.
5 (
0
.
61)
M
A
X
.
23.
2 (
0
.
91)
12.7 (0.50)
4.
6 (
0
.
18)
4.
6 (
0
.
18)
33.8 (1.33)
48.7 (1.91)
All dimensions in millimeters (inches)
Circuit "0"
Circuit "2"
Circuit "3"
Terminal Positions
Schematic diagram
diagram
Single Phase
Single Phase
Single Phase
Hybrid Bridge
Hybrid Bridge
All SCR
Common Cathode
Doubler
Bridge
Basic series
P40.
P42.
P43.
With voltage
P40.K
P42.K
P43.K
suppression
With free-wheeling
P40.W
-
-
diode
With both voltage
suppression and
P40.KW
-
-
free-wheeling diode
Circuit Type and Coding *
(-)
G1
G2
AC1
AC2
(+)
(-)
G2
AC1
AC2
G1
(+)
AC2
(-)
AC1
G1
G2
G3
G4
(+)
P400 Series
5
Bulletin I2776 rev. E 04/99
www.irf.com
Fig. 1 - Current Ratings Nomogram (1 Module Per Heatsink)
Fig. 2 - On-state Power Loss Characteristics
Fig. 3 - On-state Power Loss Characteristics
0
25
50
75
100
125
Maximum Allowable Ambient Temperature (C)
10 K/W
5 K/W
3 K/W
2 K/
W
1.5
K/
W
1 K
/W
R
=
0
.7
K
/W
- D
e
lta
R
th
S
A
0
20
40
60
80
100
120
0
5
10
15
20
25
30
35
40
Total Output Current (A)
M
a
xi
mu
m T
o
ta
l

P
o
w
e
r
L
o
s
s
(
W
)
180
(Sine)
P400 Series
T = 125C
J
0
5
10
15
20
25
30
0
5
10
15
20
Average On-state Current (A)
M
a
x
i
mu
m A
v
e
r
a
g
e
O
n
-
s
t
a
t
e

P
o
w
e
r
L
o
ss
(
W
)
RMS Limit
180
120
90
60
30
Conduction angle
P400 Series
T = 125C
Per Junction
J
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
30
35
DC
180
120
90
60
30
Average On-sta te Current (A)
M
a
x
i
m
u
m
A
v
er
a
g
e
O
n
-s
ta
te
P
o
w
e
r

L
o
s
s

(
W
)
RMS Limit
Conduction Period
P400 Series
T = 125C
Per Junction
J
Fig. 5 - On-state Voltage Drop Characteristics
Fig. 4 - Current Ratings Characteristics
70
80
90
100
110
120
130
0
5
10
15
20
25
30
35
40
45
Total Output Current (A)
M
a
x
i
mu
m A
l
l
o
w
a
b
l
e

C
a
se
T
e
mp
e
r
a
t
u
r
e

(
C
)
Fully Turned-on
180
(Rect)
180
(Sine)
P400 Series
Per Module
1
10
100
1000
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
I
n
s
t
a
n
ta
n
e
o
u
s

O
n
-
s
t
a
te
C
u
r
r
en
t
(
A
)
Instantaneous On-state Voltage (V)
P400 Series
Per Junction
T = 25 C
T = 125 C
J
J