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SD823C..C SERIES
FAST RECOVERY DIODES
Hockey Puk Version
810A
910A
D-715
Bulletin I2074/B
SD823C..C
S20
S30
Features
High power FAST recovery diode series
2.0 to 3.0 s recovery time
High voltage ratings up to 2500V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Press-puk encapsulation
Hockey Puk version case style B-43
Maximum junction temperature 150C
Typical Applications
Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications
I
F(AV)
810
910
A
@ T
hs
55
55
C
I
F(RMS)
1500
1690
A
I
FSM
@
50Hz
9300
9600
A
@ 60Hz
9730
10050
A
V
RRM
range
1200 to 2500 1200 to 2500
V
t
rr
2.0
3.0
s
@ T
J
25
25
C
T
J
- 40 to 150
C
Parameters
Units
Major Ratings and Characteristics
case style B-43
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SD823C..C Series
D-716
Voltage
V
RRM
, maximum repetitive
V
RSM
, maximum non-
I
RRM
max.
Type number
Code
peak reverse voltage
repetitive peak rev. voltage
@ T
J
= T
J
max.
V
V
mA
12
1200
1300
16
1600
1700
20
2000
2100
25
2500
2600
ELECTRICAL SPECIFICATIONS
Voltage Ratings
SD823C..C
50
I
F(AV)
Max. average forward current
810 (425) 910 (470)
A
180 conduction, half sine wave
@ heatsink temperature
55 (85)
55 (85)
C
Double side (single side) cooled
I
F(RMS)
Max. RMS forward current
1500
1690
A
@ 25C heatsink temperature double side cooled
I
FSM
Max. peak, one-cycle forward,
9300
9600
t = 10ms
No voltage
non-repetitive surge current
9730
10050
t = 8.3ms
reapplied
7820
8070
t = 10ms
100% V
RRM
8190
8450
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
432
460
t = 10ms
No voltage
Initial T
J
= T
J
max.
395
420
t = 8.3ms
reapplied
306
326
t = 10ms
100% V
RRM
279
297
t = 8.3ms
reapplied
I
2
t
Maximum I
2
t for fusing
4320
4600
KA
2
s
t = 0.1 to 10ms, no voltage reapplied
V
F(TO)1
Low level value of threshold
voltage
V
F(TO)2
High level value of threshold
voltage
r
f
1
Low level value of forward
slope resistance
r
f
2
High level value of forward
slope resistance
V
FM
Max. forward voltage drop
2.20
1.85
V
I
pk
= 1500A, T
J
= T
J
max, t
p
= 10ms sinusoidal wave
0.76
0.57
(I >
x I
F(AV)
),T
J
= T
J
max.
0.80
0.60
(16.7% x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
max.
1.11
1.06
(I >
x I
F(AV)
),T
J
= T
J
max.
1.00
0.95
(16.7% x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
max.
KA
2
s
A
V
m
Forward Conduction
Parameter
Units
Conditions
SD823C..C
S20
S30
Code
(
s)
(A)
(A/
s)
(V)
(
s)
(
C)
(A)
Test conditions
Max. values @ T
J
= 150
C
Recovery Characteristics
Typical t
rr
I
pk
di/dt
V
r
t
rr
Q
rr
I
rr
@ 25% I
RRM
Square Pulse
@ 25% I
RRM
S20
2.0
1000
50
- 50
3.5
240
110
S30
3.0
1000
50
- 50
5.0
380
130
T
J
= 25
o
C
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SD823C..C Series
D-719
Fig. 3 - Current Ratings Characteristics
Fig. 5 - Current Ratings Characteristics
Fig. 6 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 7 - Current Ratings Characteristics
Fig. 8 - Current Ratings Characteristics
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SD823C..C Series
D-720
Fig. 9 - Forward Power Loss Characteristics
Fig. 10 - Forward Power Loss Characteristics
Fig. 11 - Forward Power Loss Characteristics
Fig. 12 - Forward Power Loss Characteristics
Fig. 13 - Maximum Non-repetitive Surge Current
Fig. 14 - Maximum Non-repetitive Surge Current
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SD823C..C Series
D-721
Fig. 16 - Maximum Non-repetitive Surge Current
Fig. 15 - Maximum Non-repetitive Surge Current
Fig. 17 - Forward Voltage Drop Characteristics
Fig. 18 - Forward Voltage Drop Characteristics
Fig. 19 - Thermal Impedance Z
thJ-hs
Characteristic
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