330A
INVERTER GRADE THYRISTORS
Hockey Puk Version
ST173C..C SERIES
1
Bulletin I25180 rev. B 04/00
www.irf.com
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
Features
Metal case with ceramic insulator
International standard case TO-200AB (A-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
case style TO-200AB (A-PUK)
I
T(AV)
330
A
@ T
hs
55
C
I
T(RMS)
610
A
@ T
hs
25
C
I
TSM
@
50Hz
4680
A
@ 60Hz
4900
A
I
2
t
@
50Hz
110
KA
2
s
@ 60Hz
100
KA
2
s
V
DRM
/V
RRM
1000 to1200
V
t
q
range
15 to 30
s
T
J
- 40 to 125
C
Major Ratings and Characteristics
Parameters
ST173C..C
Units
ST173C..C Series
2
Bulletin I25180 rev. B 04/00
www.irf.com
Voltage
V
DRM
/V
RRM
, maximum
V
RSM
, maximum
I
DRM
/I
RRM
max.
Type number
Code
repetitive peak voltage
non-repetitive peak voltage
@ T
J
= T
J
max.
V
V
mA
10
1000
1100
12
1200
1300
I
T(AV)
Max. average on-state current
330 (120)
A
180 conduction, half sine wave
@ Heatsink temperature
55 (85)
C
double side (single side) cooled
I
T(RMS)
Max. RMS on-state current
610
DC @ 25C heatsink temperature double side cooled
I
TSM
Max. peak, one half cycle,
4680
t = 10ms
No voltage
non-repetitive surge current
4900
A
t = 8.3ms
reapplied
3940
t = 10ms
100% V
RRM
4120
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
110
t = 10ms
No voltage
Initial T
J
= T
J
max
100
t = 8.3ms
reapplied
77
t = 10ms
100% V
RRM
71
t = 8.3ms
reapplied
I
2
t
Maximum I
2
t for fusing
1100
KA
2
s
t = 0.1 to 10ms, no voltage reapplied
Parameter
ST173C..C
Units
Conditions
On-state Conduction
KA
2
s
ELECTRICAL SPECIFICATIONS
Voltage Ratings
ST173C..C
40
Frequency
Units
50Hz
760
660
1200
1030
5570
4920
400Hz
730
590
1260
1080
2800
2460
1000Hz
600
490
1200
1030
1620
1390
A
2500Hz
350
270
850
720
800
680
Recovery voltage Vr
50
50
50
50
50
50
Voltage before turn-on Vd
V
DRM
V
DRM
V
DRM
Rise of on-state current di/dt
50
50
-
-
-
-
A/
s
Heatsink temperature
40
55
40
55
40
55
C
Equivalent values for RC circuit
47
/ 0.22F
47
/ 0.22F
47
/ 0.22F
I
TM
180
o
el
180
o
el
100
s
I
TM
I
TM
Current Carrying Capability
V
ST173C..C Series
3
Bulletin I25180 rev. B 04/00
www.irf.com
V
TM
Max. peak on-state voltage
2.07
I
TM
= 600A, T
J
= T
J
max, t
p
= 10ms sine wave pulse
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t
1
Low level value of forward
slope resistance
r
t
2
High level value of forward
slope resistance
I
H
Maximum holding current
600
T
J
= 25C, I
T
> 30A
I
L
Typical latching current
1000
T
J
= 25C, V
A
= 12V, Ra = 6
, I
G
= 1A
Parameter
ST173C..C
Units
Conditions
On-state Conduction
1.55
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
1.61
(I >
x I
T(AV)
), T
J
= T
J
max.
V
0.87
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
0.77
(I >
x I
T(AV)
), T
J
= T
J
max.
m
mA
di/dt
Max. non-repetitive rate of rise
T
J
= T
J
max, V
DRM
= rated V
DRM
of turned-on current
I
TM
= 2 x di/dt
T
J
= 25C, V
DM
= rated V
DRM
,
I
TM
= 50A DC, t
p
= 1s
Resistive load, Gate pulse: 10V, 5
source
T
J
= T
J
max,
I
TM
= 300A, commutating di/dt
= 20A/s
V
R
= 50V, t
p
= 500s, dv/dt: see table in device code
Switching
Parameter
ST173C..C
Units
Conditions
1000
A/s
t
d
Typical delay time
1.1
Min
Max
dv/dt
Maximum critical rate of rise of
T
J
= T
J
max. linear to 80% V
DRM
, higher value
off-state voltage
available on request
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current
Parameter
ST173C..C
Units
Conditions
Blocking
500
V/
s
40
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
P
GM
Maximum peak gate power
60
P
G(AV)
Maximum average gate power
10
I
GM
Max. peak positive gate current
10
A
T
J
= T
J
max, t
p
5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
Max. DC gate current required
to trigger
V
GT
Max. DC gate voltage required
to trigger
I
GD
Max. DC gate current not to trigger
20
mA
V
GD
Max. DC gate voltage not to trigger
0.25
V
Triggering
Parameter
ST173C..C
Units
Conditions
20
5
V
T
J
= T
J
max, t
p
5ms
200
mA
3
V
T
J
= 25C, V
A
= 12V, Ra = 6
T
J
= T
J
max, rated V
DRM
applied
t
q
Max. turn-off time
15
30
s
W
T
J
= T
J
max, f = 50Hz, d% = 50
ST173C..C Series
4
Bulletin I25180 rev. B 04/00
www.irf.com
T
J
Max. operating temperature range
-40 to 125
T
stg
Max. storage temperature range
-40 to 150
R
thJ-hs
Max. thermal resistance,
0.17
DC operation single side cooled
junction to heatsink
0.08
DC operation double side cooled
R
thC-hs
Max. thermal resistance,
0.033
DC operation single side cooled
case to heatsink
0.017
DC operation double side cooled
F
Mounting force, 10%
4900
N
(500)
(Kg)
wt
Approximate weight
50
g
Parameter
ST173C..C
Units
Conditions
K/W
Thermal and Mechanical Specification
C
Case style
TO - 200AB (A-PUK)
See Outline Table
K/W
R
thJ-hs
Conduction
(The following table shows the increment of thermal resistence R
thJ-hs
when devices operate at different conduction angles than DC)
Single Side Double Side
Single Side Double Side
180
0.015
0.016
0.011
0.011
120
0.018
0.019
0.019
0.019
90
0.024
0.024
0.026
0.026
K/W
T
J
= T
J
max.
60
0.035
0.035
0.036
0.037
30
0.060
0.060
0.060
0.061
Sinusoidal conduction
Rectangular conduction
Conduction angle
Units
Conditions
Ordering Information Table
5
6
8
9
ST
17
3
C
12
C
H
K
1
3
4
10
7
Device Code
1
2
1
- Thyristor
2
- Essential part number
3
- 3 = Fast turn off
4
- C = Ceramic Puk
5
- Voltage code: Code x 100 = V
RRM
(See Voltage Rating Table)
6
- C = Puk Case TO-200AB (A-PUK)
7
- Reapplied dv/dt code (for t
q
test condition)
8
- t
q
code
9
- 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
- Critical dv/dt:
None = 500V/sec (Standard value)
L
= 1000V/sec (Special selection)
10
t
q
(s)
dv/dt - t
q
combinations available
dv/dt (V/s)
20
50
100
200
400
15
CL
--
--
--
--
18
CP
DP
EP
FP *
--
20
CK
DK
EK
FK *
HK
25
CJ
DJ
EJ
FJ
HJ
30
--
DH
EH
FH
HH
*
Standard part number.
All other types available only on request.
ST173C..C Series
5
Bulletin I25180 rev. B 04/00
www.irf.com
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
40
50
60
70
80
90
1 0 0
1 1 0
1 2 0
1 3 0
0
4 0
80
1 2 0
16 0
2 00
24 0
30
60
90
120
18 0
Av erage On -state Current (A)
C o nd uc tio n A ng le
M
a
x
i
mu
m
A
l
l
o
w
a
bl
e
He
at
s
i
n
k
T
e
m
p
e
r
at
u
r
e
(
C
)
ST173C..C Series
(Sin gle Side Cooled)
R (D C) = 0.17 K/W
th J -hs
2 0
3 0
4 0
5 0
6 0
7 0
8 0
9 0
1 0 0
1 1 0
1 2 0
1 3 0
0
5 0
1 0 0
1 5 0
2 0 0
2 5 0
3 0 0
3 5 0
D C
3 0
6 0
9 0
1 2 0
1 8 0
A v e ra g e O n -st a te C u rre n t ( A )
C o nd u ct io n Pe rio d
M
a
x
i
mu
m A
l
l
o
w
a
b
l
e
H
e
a
t
s
i
n
k
T
e
mp
e
r
a
t
u
r
e
(
C)
ST 1 7 3 C ..C S e rie s
( Sin g le S id e C o o le d )
R ( D C ) = 0 .1 7 K / W
thJ -hs
Outline Table
Case Style TO-200AB (A-PUK)
All dimensions in millimeters (inches)
DIA. MAX.
4.75 (0.19)
28 (1.10)
6.5 (0.26)
19 (0.75)
0.3 (0.01) MIN.
0.3 (0.01) MIN.
13.7 / 14.4
(0.54 / 0.57)
25 5
GATE TERM. FOR
1.47 (0.06) DIA.
PIN RECEPTACLE
ANODE TO GATE
CREEPAGE DISTANCE: 7.62 (0.30) MIN.
STRIKE DISTANCE: 7.12 (0.28) MIN.
19 (0.75)
DIA. MAX.
38 (1.50) DIA MAX.
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
42 (1.65) MAX.
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
ST173C..C Series
6
Bulletin I25180 rev. B 04/00
www.irf.com
Fig. 7 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
Fig. 5 - On-state Power Loss Characteristics
Fig. 6 - On-state Power Loss Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
2 0
3 0
4 0
5 0
6 0
7 0
8 0
9 0
1 0 0
1 1 0
1 2 0
1 3 0
0
1 0 0
2 0 0
3 0 0
4 0 0
5 0 0
6 0 0
7 0 0
D C
3 0
6 0
9 0
1 2 0
1 8 0
A v e ra g e O n -st a t e C urr e n t (A )
C o nd u ctio n Pe rio d
M
a
x
i
mu
m
A
l
l
o
w
a
b
l
e
H
e
a
t
s
i
n
k
T
e
mp
e
r
a
t
u
r
e
(
C)
ST 1 7 3 C ..C Se rie s
( D o u b le Sid e C o o le d )
R ( D C ) = 0 .0 8 K / W
th J- hs
3 0
4 0
5 0
6 0
7 0
8 0
9 0
1 0 0
1 1 0
1 2 0
1 3 0
0
5 0
1 0 0 1 5 0 2 0 0 2 5 0 3 0 0 3 5 0 4 0 0
3 0
6 0
9 0
1 2 0
1 8 0
A v e ra g e O n - sta t e C u rre n t ( A )
C on d uc tion A ng le
M
a
x
i
m
u
m
A
l
l
o
w
a
b
l
e
H
e
a
t
s
i
n
k
T
e
m
p
er
a
t
u
r
e (
C)
ST 1 7 3 C ..C S e rie s
( D o ub le Sid e C o o le d )
R ( D C ) = 0 .0 8 K/ W
thJ -h s
0
2 0 0
4 0 0
6 0 0
8 0 0
1 0 0 0
1 2 0 0
1 4 0 0
0
1 0 0
2 0 0
3 0 0
4 0 0
5 0 0
6 0 0
7 0 0
D C
1 8 0
1 2 0
9 0
6 0
3 0
R M S L im it
Co nd uc tio n Pe riod
M
a
x
i
m
u
m
A
v
er
a
g
e O
n
-
s
t
a
t
e
P
o
w
e
r
L
o
s
s
(
W
)
A v e ra g e O n -st a te C u rre n t (A )
ST 1 7 3 C ..C Se r ie s
T = 1 2 5 C
J
0
1 0 0
2 0 0
3 0 0
4 0 0
5 0 0
6 0 0
7 0 0
8 0 0
9 0 0
1 0 0 0
0
5 0 1 0 0 1 5 0 2 0 0 2 5 0 3 0 0 3 5 0 4 0 0 4 5 0
1 8 0
1 2 0
9 0
6 0
3 0
R M S L im it
Co nd uctio n A ng le
M
a
x
i
mu
m A
v
e
r
a
g
e
O
n
-
s
t
a
t
e
P
o
w
e
r
L
o
s
s
(
W
)
A v e ra g e O n -st a te C u rre n t ( A )
S T 1 7 3 C ..C Se rie s
T = 1 2 5 C
J
2 0 0 0
2 5 0 0
3 0 0 0
3 5 0 0
4 0 0 0
4 5 0 0
1
1 0
1 0 0
N um b er O f E q ua l A m p litud e H a lf C yc le C urre n t Pulse s (N )
A t A n y R a te d L o a d C o n d it io n A n d W it h
R a t e d V A p p lie d F o llo w in g S u rg e .
RRM
P
e
ak
Hal
f
S
i
n
e
W
a
v
e
O
n
-
s
t
a
t
e
C
u
r
r
e
n
t
(
A
)
In it ia l T = 1 2 5 C
@ 6 0 H z 0 .0 0 8 3 s
@ 5 0 H z 0 .0 1 0 0 s
J
ST 1 7 3 C ..C S e rie s
1 5 0 0
2 0 0 0
2 5 0 0
3 0 0 0
3 5 0 0
4 0 0 0
4 5 0 0
5 0 0 0
0 .0 1
0 .1
1
P u lse T ra in D u ra tio n ( s)
V e rsu s P ulse T ra in D u ra t io n . C o n t ro l
O f C o n d u c t io n M a y N o t B e M a in t a in e d .
P
e
ak
Hal
f
S
i
n
e
W
a
v
e
O
n
-
s
t
a
t
e
C
u
r
r
e
n
t
(
A
)
In it ia l T = 1 2 5 C
N o V o lt a g e R e a p p lie d
Ra t e d V R e a p p lie d
RRM
J
ST 1 7 3 C ..C S e rie s
M a x im u m N o n R e p e t it iv e S urg e C u rre n t
ST173C..C Series
7
Bulletin I25180 rev. B 04/00
www.irf.com
Fig. 9 - On-state Voltage Drop Characteristics
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
Fig. 13 - Frequency Characteristics
10 0
1 0 00
10 0 00
1
1 .5
2
2 .5
3
3.5
4
4 .5
T = 25 C
I
n
st
a
n
t
a
n
e
o
u
s
O
n
-
s
t
a
t
e
C
u
rre
n
t
(
A
)
Instantan eous On -state Voltage (V)
T = 125 C
J
ST1 73C ..C Series
J
0
5 0
1 0 0
1 5 0
2 0 0
2 5 0
0
20
40
6 0
8 0
1 0 0
I = 5 00 A
3 0 0 A
2 0 0 A
10 0 A
50 A
Rate O f Fall Of O n-state Current - di/dt (A/s)
M
a
x
i
m
u
m
R
e
ve
r
s
e
R
e
c
o
ve
ry
C
h
a
r
g
e
-
Q
rr (
C
)
ST173 C..C Ser ies
T = 12 5 C
J
T M
0 .0 0 1
0 .0 1
0 .1
1
0 .0 0 1
0 . 0 1
0 . 1
1
1 0
S q u a re W a v e P u lse D ur at io n ( s)
th
J
-
h
s
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
I
m
pe
d
a
n
c
e
Z
(
K
/
W
)
S T 1 7 3 C ..C Se rie s
S t e a d y S ta t e V a lu e
R = 0 .1 7 K / W
( S in g le S id e C o o le d )
R = 0 .0 8 K / W
( D o u b le S id e C o o le d )
( D C O p e ra t io n )
th J- hs
th J- hs
1 E 2
1 E 3
1 E 4
1 E 1
1 E 2
1 E 3
1 E 4
50 H z
400
2 50 0
1 00
P u lse Ba se w id t h ( s)
P
e
a
k
O
n
-
s
t
a
t
e
C
u
rre
n
t
(
A
)
100 0
1 50 0
3 000
2 00
500
5 00 0
ST1 73 C.. C Serie s
Sinus o id a l p ulse
T = 40 C
C
Snu b b e r c irc uit
R = 47 oh m s
C = 0.22 F
V = 80% V
s
s
D
DR M
t p
1 E 4 1 E 1
1 E 2
1 E 3
1 E 4
50 H z
40 0
2 50 0
10 0
Pu lse B a se w id th ( s)
10 00
1 50 0
30 0 0
20 0
50 0
5 0 00
ST1 73C ..C Serie s
Sinus oid a l p ulse
T = 55C
C
Snub b er c irc uit
R = 47 o hm s
C = 0 .22 F
V = 8 0% V
s
s
D
D R M
tp
1 E 1
0
2 0
4 0
6 0
8 0
1 0 0
1 2 0
1 4 0
1 6 0
0
2 0
4 0
6 0
8 0
1 0 0
M
a
x
i
m
u
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
C
u
rre
n
t
-
I
r
r
(
A
)
R a t e O f Fa ll O f F o rw a r d C u rre n t - d i/ d t ( A / s)
I = 5 00 A
30 0 A
2 00 A
1 00 A
5 0 A
S T1 73 C . . C S e rie s
T = 1 2 5 C
J
TM
ST173C..C Series
8
Bulletin I25180 rev. B 04/00
www.irf.com
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
Fig. 15 - Frequency Characteristics
Fig. 14 - Frequency Characteristics
1 E 1
1 E 2
1 E 3
1 E 4
1 E 1
1 E 2
1 E 3
1 E 4
50 H z
400
2 50 0
10 0
Pu lse B a se w id t h ( s)
P
e
a
k
O
n
-
s
ta
te
C
u
r
r
e
n
t
(
A
)
10 00
15 00
3 00 0
20 0
500
5 000
ST17 3C ..C Se ries
Tra p e zoid a l p uls e
T = 40C
d i/d t = 1 00 A/s
C
Sn ub b e r c irc uit
R = 4 7 o hm s
C = 0 .22 F
V = 8 0% V
s
s
D
D RM
tp
10 00 0
1 E 4
1 E 1
1 E 2
1 E 3
1 E 4
50 H z
40 0
2 50 0
1 00
P u lse B ase w id t h ( s)
1 000
1 50 0
20 0
5 00
ST1 73 C..C Serie s
Tra p ezo id a l p u ls e
T = 55C
d i/d t = 10 0A /s
C
3 00 0
Snub b e r c irc uit
R = 47 o hm s
C = 0 .22 F
V = 8 0% V
s
s
D
D RM
tp
5 0 00
10 00 0
1 E 1
1 E 1
1 E 2
1 E 3
1 E 4
50 H z
400
2 50 0
100
P ulse B a se w idt h ( s)
10 00
1 50 0
2 00 0
2 00
5 00
ST17 3C. .C Se ries
Tra p ezo id a l p uls e
T = 5 5C
d i/d t = 5 0A/s
C
Snub b er c ircuit
R = 47 o hm s
C = 0 .22 F
V = 8 0% V
s
s
D
D RM
tp
3 00 0
5 00 0
1 E 1
1 E 2
1 E 3
1 E 4
1 E 1
1 E 2
1 E 3
1 E 4
50 H z
4 00
2 50 0
1 00
1 00 0
1 5 00
2 00 0
30 00
2 00
50 0
Pu lse B a se w id th ( s)
P
e
a
k
O
n
-
s
ta
t
e
C
u
r
r
e
n
t
(
A
)
ST173 C. .C Se ries
Tra p ezo id a l p uls e
T = 40 C
d i/d t = 5 0A/s
C
Snu b b e r c irc uit
R = 47 o hm s
C = 0 .22 F
V = 8 0% V
s
s
D
D RM
tp
5 00 0
1 E 4
1 E 1
1 E 2
1 E 3
1 E 4
P u lse Ba se w id th ( s)
20 jo ules p e r p ulse
1
0 .5
0.3
0 .2
0 .1
ST1 73 C..C Serie s
Rec ta ngula r p ulse
d i/d t = 50 A/s
10
5
3
tp
2
1 E 1
1 E 1
1 E 2
1 E 3
1 E 4
1 E 5
1 E 1
1 E 2
1 E 3
1 E 4
P u lse B a se w id th ( s)
20 jo ule s p e r p uls e
2
1
0.5
0.3
0 .2
0.1
1 0
5
P
e
a
k
O
n
-
s
ta
te
C
u
r
r
e
n
t
(
A
)
3
ST17 3C ..C Serie s
Sinuso id a l p uls e
t p
1 E 4
ST173C..C Series
9
Bulletin I25180 rev. B 04/00
www.irf.com
Fig. 17 - Gate Characteristics
0 . 1
1
1 0
1 0 0
0 . 0 0 1
0 . 0 1
0 . 1
1
1 0
1 0 0
V G D
IG D
( b )
(a )
Tj
=
2
5
C
T
j
=
1
25
C
T
j
=
-
40
C
( 1 )
( 2 )
In st a n t a n e o u s G a t e C u rre n t ( A )
I
n
st
a
n
t
a
n
e
o
u
s G
a
t
e
V
o
l
t
ag
e
(
V
)
Re c ta n g ula r g a t e p ulse
a ) R e c o m m e n d e d lo a d lin e f o r
b ) R e c o m m e n d e d lo a d lin e fo r
< = 3 0 % ra t e d di/ dt : 1 0 V , 1 0 o h m s
rat e d d i/d t : 2 0 V , 1 0 o h m s; tr <= 1 s
tr< = 1 s
( 1 ) PG M = 1 0 W , tp = 2 0 m s
( 2 ) PG M = 2 0 W , tp = 1 0 m s
( 3 ) PG M = 4 0 W , tp = 5 m s
( 4 ) PG M = 6 0 W , tp = 3 . 3 m s
( 3 )
D e v ic e : ST 1 7 3 C . .C S e rie s F re q u e n c y L im ite d b y PG (A V )
( 4 )
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