DESCRIPTION
2SA2068 is a super mini package resin sealed
silicon PNP epitaxial transistor,
It is designed for low frequency application.
Since it is a super-thin flat lead type package,a high-density
mounting are possible.
Complementary with 2SA1235A.
FEATURE
Super-thin flat lead type package.t=0.45mm
Excellent linearly of DC forward current gain.
Low collector to emitter saturation voltage
VCE(sat)=-0.3V max (@Ic=-100mA/IB=-10mA)
APPLICATION
For hybrid IC,small type machine low frequency voltage amplify
application.
It shows hFE classification in below table.
SMALL-SIGNAL TRANSISTOR
PRELIMINARY
2SA2068
Notics:This is not a final specification. FOR LOWFREQUENCY AMPLIFY APPLICATION
Some parametric limits are subject to change. SILICON PNP EPITAXIAL TYPE
OUTLINE DRAWING
Unit
MAXIMUM RATINGS
Ta=25
Symbol
Parameter
Ratings
Unit
V
CBO
Collector to Base voltage
-50
V
V
CEO
Collector to Emitter voltage
-6
V
V
EBO
Emitter to Base voltage
-50
V
I
O
Collector current
-200
mA
P
c
Collector dissipation
100
mW
T
j
Junction temperature
125
T
stg
Storage temperature
-55125
ELECTRICAL CHARACTERISTICS
Ta=25
Limits
Min
Typ
Max
Collector to Emitter Breakdown voltage
V(BR)
CEO
I
C
=-100A, R
BE
=
-50
V
Collector cut off current
I
CBO
V
CB
=-50V, I
E
=0mA
-
-
-0.1
A
Emitter cut off current
I
EBO
V
EB
=-6V, I
C
=0mA
-
-
-0.1
A
DC forward current gain
hFE
V
CE
=-6V, I
C
=-1mA
150
800
-
DC forward current gain
hFE
V
CE
=-6V, I
C
=-0.1mA
90
-
-
-
C to E saturation voltage
VCE(sat)
I
C
=-100mA, I
B
=-10mA
-
-
- 0.3
v
Gain bandwidth product
fT
V
CE
=-6V, I
E
=10mA
-
200
-
MHz
Collector output capacitance
Cob
V
CB
=-6V, I
E
=0mA,f=1MHz
-
4.0
-
pF
Noise figure
NF
V
CE
=-6V, I
E
=0.3mA,f=100Hz,RG=10k
-
-
20
dB
JEITA
TERMINAL CONNECTER
BASE
EMITTER
COLLECTOR
0.45
0.25
0.2
0.8
0.2
0.4
0.4
0.8
1.2
ISAHAYA ELECTRONICSCORPORATION
Item
E
F
G
hFE
150300
250500
400800
Abbrivation
ME
MF
MG
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Jan.2003
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